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    f1010

    Abstract: D0247 IRFZ34N 2D 1002 diode for irfz34n f1010 IR T6A marking M6SS IRFZ34N MOSFET
    Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY H EXFET Power M O S F E T • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Vdss = 55V


    OCR Scan     		PDF O-220 00E473b f1010 D0247 IRFZ34N 2D 1002 diode for irfz34n f1010 IR T6A marking M6SS IRFZ34N MOSFET