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    Untitled

    Abstract: No abstract text available
    Text: P r o d u c t S p e c if ic a t io n < £ > 2 iL 0 5 Z16C30 CMOS USC UNIVERSAL S e r ia l co ntro ller FEATURES • Transparent Bisync M ode with EBCDIC or ASCII C h a ra c te r C o d e ; A u to m a tic C R C H a n d lin g ; Program mable Idle Line Condition; O ptional Preamble


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    PDF Z16C30 16-Bit 32-Bità Z16C30 68-Pin Z16C3010VSC 16C30 Z16C30,

    Untitled

    Abstract: No abstract text available
    Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357C Z Rev. 3.0 May. 20,1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organize as 32768-word x 8-bit. They have realized high speed, low power consumption and high reliability by


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    PDF HN58V256A HN58V257A 32768-word ADE-203-357C 64-byte 441b203 003442b

    KM44C4000BS

    Abstract: KM44C4000BS 6 KM44C4000B
    Text: KM44C4000BS ELECTRONICS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


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    PDF KM44C4000B consumpt47 KM44C4000BS 7Sb4145 003442b KM44C4000BS KM44C4000BS 6

    B0648

    Abstract: B0648F 652f BD643F BD644F BD645F BD647F BD649F BD651F BD652F
    Text: BD644F; 646F B0648F; 650F BD652F SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


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    PDF BD644F; B0648F; BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F B0648 B0648F 652f BD643F BD645F BD647F BD651F BD652F