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    "CONTENT ADDRESSABLE MEMORY" PRECHARGE Search Results

    "CONTENT ADDRESSABLE MEMORY" PRECHARGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    "CONTENT ADDRESSABLE MEMORY" PRECHARGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tcam

    Abstract: R8A20410BG renesas tcam tcam renesas renesas CAM R8A2041 Xelerated tcam TCAM chip Xelerated ternary content addressable memory
    Text: 20Mbit QUAD-Search Content Addressable Memory Features & Benefits  20Mbit density Supports large routing tables and enables low-cost, low-power, more reliable system designs  360 Million Searches per Second MSPS per table Delivers the industry’s highest packet look-up


    Original     		PDF 20Mbit 640-bit 0410/in-house/PF/SP R10PF0001EU0100 tcam R8A20410BG renesas tcam tcam renesas renesas CAM R8A2041 Xelerated tcam TCAM chip Xelerated ternary content addressable memory

    ternary content addressable memory VHDL

    Abstract: ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge
    Text: V S MSUNG STDL150 ELECTRONICS STDL150 Standard Cell 0.13um System-On-Chip ASIC March 2003, V2.0 Features Analog cores - Ldrawn = 0.13um 1.5/2.5/3.3V Device 1.5/2.5/3.3V - Up to 45.8 million gates Interface - Power dissipation: 13nW/MHz@1.5V, 2SL, ND2 5.0V


    Original     		PDF STDL150 STDL150 13nW/MHz ARM920T/ARM940T, ternary content addressable memory VHDL ARM1020E SMART ASIC bga ARM dual port SRAM compiler Samsung ASIC 0.13um standard cell library Standard Cell 0.13um System-On-Chip ASIC DSPG samsung lcd JTAG "content addressable memory" precharge

    ARM9TDMI

    Abstract: ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung
    Text: V S MSUNG STDH150 ELECTRONICS STDH150 Standard Cell 0.13um System-On-Chip ASIC Dec 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 34.3 million gates - Power dissipation:9nW/[email protected], 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		PDF STDH150 STDH150 ARM920T/ARM940T, ARM9TDMI ARM1020E samsung hdd Samsung S ARM teaklite DSPG SMART ASIC bga ARM920t datasheet Avant Electronics USB samsung

    ARM dual port SRAM compiler

    Abstract: DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ
    Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/[email protected], 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		PDF STD150 STD150 ARM920T/ARM940T, ARM dual port SRAM compiler DSPG teaklite ARM9TDMI ARM1020E samsung hdd UART 16C450 Standard Cell 0.13um System-On-Chip ASIC ARM920T ARM926EJ

    ARM1020E

    Abstract: samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T
    Text: V S MSUNG STD150 ELECTRONICS STD150 Standard Cell 0.13um System-On-Chip ASIC Oct 2001, V1.0 Features Analog cores - Ldrawn = 0.13um 1.2/2.5/3.3V Device - Up to 46 million gates - Power dissipation:9nW/[email protected], 2SL, ND2 3.3/5.0V - Gate Delay: 52ps @ 1.2V, 2SL, ND2


    Original     		PDF STD150 STD150 ARM920T/ARM940T, ARM1020E samsung hdd Samsung Soc processor 4468 8 pin ARM920t datasheet ARM9TDMI DSPG ARM SRAM compiler UART 16C450 ARM940T

    ARM dual port SRAM compiler

    Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
    Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


    Original     		PDF STD130 STD130 24nW/MHz ARM920T/ARM940T, ARM dual port SRAM compiler rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110

    DSPG

    Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
    Text: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


    Original     		PDF STD131 STD131 24nW/MHz ARM920T/ARM940T, DSPG Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler

    hp compaq 6910p

    Abstract: compaq 6910P notebook intel 8201 intel nand flash sata ssd controller sata ssd SFF-8144 6910P SSD 352 SSDSA1MH160G1
    Text: Intel X18-M/X25-M SATA Solid State Drive SSDSA1MH080G1, SSDSA2MH080G1, SSDSA1MH160G1, SSDSA2MH160G1 Product Manual „ „ „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB and 160 GB Uses Intel NAND flash memory Multi-Level Cell


    Original     		PDF X18-M/X25-M SSDSA1MH080G1, SSDSA2MH080G1, SSDSA1MH160G1, SSDSA2MH160G1 318512-002US. 319765-008US hp compaq 6910p compaq 6910P notebook intel 8201 intel nand flash sata ssd controller sata ssd SFF-8144 6910P SSD 352 SSDSA1MH160G1

    Untitled

    Abstract: No abstract text available
    Text: Version 2.0 ATP Industrial Grade SlimSATA Embedded Module Specification ATP Industrial Grade SlimSATA Embedded Module Version 2.0 Your Ultimate Memory Solution! 1 ATP Confidential &Proprietary Version 2.0 ATP Industrial Grade SlimSATA Embedded Module Specification


    Original     		PDF

    SFF-8201

    Abstract: intel nand flash memory intel ssd block diagram for mini SATA SSD intel nand flash block diagram of sata SSD drive CNS14348
    Text: Intel X25-V SATA Solid State Drive Model Codes: SSDSA2M040G2XX Product Codes: SSDSA2MP040G2XX Product Manual         Available in 2.5” Form Factor Capacity: 40 GB Uses Intel NAND flash memory Multi-Level Cell MLC components Read and Write IOPS Specifications


    Original     		PDF X25-V SSDSA2M040G2XX SSDSA2MP040G2XX 322736-002US SFF-8201 intel nand flash memory intel ssd block diagram for mini SATA SSD intel nand flash block diagram of sata SSD drive CNS14348

    SFF-8144

    Abstract: 3185* Intel block diagram of sata SSD drive hp 6910p SFF-8201 Micro SATA
    Text: Intel X18-M/X25-M SATA Solid State Drive SSDSA1MH080G1, SSDSA2MH080G1 Advance Product Manual „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB Uses Intel NAND flash memory Multi-Level Cell MLC components Bandwidth Performance Specifications


    Original     		PDF X18-M/X25-M SSDSA1MH080G1, SSDSA2MH080G1 318512-002US. 319765-002US SFF-8144 3185* Intel block diagram of sata SSD drive hp 6910p SFF-8201 Micro SATA

    SSDSA2MH160G2

    Abstract: SSDSA1MH080G201 SSDSA2MH080G2 SSDSA1MH160G201 SSDSA1MH160G2 SSDSA1MH080G2 block diagram for mini SATA SSD SFF-8144 intel ssd intel nand flash
    Text: Intel X18-M/X25-M SATA Solid State Drive 34 nm Product Line SSDSA1MH080G2, SSDSA2MH080G2, SSDSA1MH160G2, SSDSA2MH160G2 Product Manual „ „ „ „ „ „ „ „ Available in 1.8” and 2.5” Form Factors Capacity: 80 GB and 160 GB Uses Intel NAND flash memory Multi-Level Cell


    Original     		PDF X18-M/X25-M SSDSA1MH080G2, SSDSA2MH080G2, SSDSA1MH160G2, SSDSA2MH160G2 322296-001US SSDSA2MH160G2 SSDSA1MH080G201 SSDSA2MH080G2 SSDSA1MH160G201 SSDSA1MH160G2 SSDSA1MH080G2 block diagram for mini SATA SSD SFF-8144 intel ssd intel nand flash

    JESD218

    Abstract: SSDSC2 intel nand flash "content addressable memory" power match precharge SFF-8201
    Text: Intel Solid-State Drive 510 Series SSDSC2MH120A2XX, SSDSC2MH250A2XX Product Specification        Capacity: 120 GB, 250 GB Components: Intel® 34nm NAND Flash Memory Multi-Level Cell MLC Form Factor: 2.5-inch — Thickness: 9.5 mm — Weight: 80 ±2 grams


    Original     		PDF SSDSC2MH120A2XX, SSDSC2MH250A2XX 512-byte 325012-001US JESD218 SSDSC2 intel nand flash "content addressable memory" power match precharge SFF-8201

    Samsung 64Gb Nand flash

    Abstract: MCBQE25G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 S3C49RBXZZ 01h-FDh SAT-PH22-S2A-FG S3C49 32G nand 73212
    Text: NAND based Solid State Drive Serial ATA NSSD NAND based Solid State Drive Datasheet Rev. 1.0 Sept 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF S3C49RBXZZ MCBQE32G5MPQ-0VA03 MCBQE25G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 Samsung 64Gb Nand flash MCBQE25G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 S3C49RBXZZ 01h-FDh SAT-PH22-S2A-FG S3C49 32G nand 73212

    Untitled

    Abstract: No abstract text available
    Text: Product data sheet Industrial SATA SSD 2.5” X-200 Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : Janu ar y 2 , 2 0 1 2 Re vi si o n: 1 . 2 Fi le : X - 2 00_ da ta_ s he e t_ SA - Q x BR _Re v 1 1 2


    Original     		PDF X-200 CH-9552 Rev12 64GByte

    Untitled

    Abstract: No abstract text available
    Text: Product data sheet Industrial SATA SSD 2.5” X-200 Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : De ce m be r 14 , 2 0 1 2 Re vi si o n: 1 .4 0 Fi le : X - 2 00_ da ta_ s he e t_ SA - Q x BR_Re v 1 4 0. doc


    Original     		PDF X-200 CH-9552 Rev140 128GByte

    Untitled

    Abstract: No abstract text available
    Text: Product data sheet Industrial Slim-SATA SSD MO-297A X-200s Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : 31 Oct o be r 2 0 1 1 Re vi si o n: 1 .1 0 Fi le : X - 2 00 s_ da ta_ s he e t _S A - V x BR_ Re v 1 1 0 .d oc


    Original     		PDF MO-297A X-200s CH-9552 Rev110 32GByte MO-297A)

    Untitled

    Abstract: No abstract text available
    Text: Product data sheet 2.5” Industrial X-200 Series SATA II - 3.0Gb/s up to UDMA6 / MDMA2 / PIO4 Standard and industrial temperature grade B U: Sw i ss b it Gr ou p Date : Janu ar y 2 , 2 0 1 2 Re vi si o n: 1 . 2 Fi le : X - 2 00_ da ta_ s he e t_ SA - Q x BR _Re v 1 1 2


    Original     		PDF X-200 CH-9552 Rev12 64GByte

    22 pin SSD connector

    Abstract: SSDSA2M160G2XX SSDsa2m080g2 SSDSA2M080G2XX x25-m SSDSA2MJ080G2XX SSDSA1M160G2XX intel ssd Intel flash memory small outline package guide 2010 Intel Corporation esd flash small outline package guide
    Text: Intel X18-M/X25-M SATA Solid-State Drive 34 nm Product Line Model Codes: SSDSA2M080G2XX, SSDSA1M080G2XX, SSDSA2M120G2XX, SSDSA2M160G2XX, SSDSA1M160G2XX Product Codes: SSDSA2MH080G2XX, SSDSA2MJ080G2XX, SSDSA1MH080G2XX, SSDSA2MH120G2XX, SSDSA2MH160G2XX, SSDSA1MH160G2XX


    Original     		PDF X18-M/X25-M SSDSA2M080G2XX, SSDSA1M080G2XX, SSDSA2M120G2XX, SSDSA2M160G2XX, SSDSA1M160G2XX SSDSA2MH080G2XX, SSDSA2MJ080G2XX, SSDSA1MH080G2XX, SSDSA2MH120G2XX, 22 pin SSD connector SSDSA2M160G2XX SSDsa2m080g2 SSDSA2M080G2XX x25-m SSDSA2MJ080G2XX intel ssd Intel flash memory small outline package guide 2010 Intel Corporation esd flash small outline package guide

    JESD218

    Abstract: intel ssd 320 intel nand flash ISO-7779 "content addressable memory" power match precharge intel ssd intel 25nm nand flash intel flash 25nm
    Text: Intel Solid-State Drive 320 Series Product Specification          Form Factors: 1.8-inch and 2.5-inch Capacity: — 80/160/300 GB 1.8-inch — 40/80/120/160/300/600 GB (2.5-inch) Components: Intel® 25nm NAND Flash Memory Multi-Level Cell (MLC)


    Original     		PDF 128-bit 512-byte 325152-001US JESD218 intel ssd 320 intel nand flash ISO-7779 "content addressable memory" power match precharge intel ssd intel 25nm nand flash intel flash 25nm

    stk 2230

    Abstract: No abstract text available
    Text: Am95C85 Content Addressable Data Manager FINAL DISTINCTIVE CHARACTERISTICS High-performance sorting, searching, and updating 1K byte software-reconfigurable memory array Programmable record size Cascadable up to 256 devices Content-addressable operation, independent o f record


    OCR Scan     		PDF Am95C85 16-MHz TC004140 stk 2230

    Untitled

    Abstract: No abstract text available
    Text: Am95C85 Content Addressable Data Manager PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • • High-performance sorting, searching, and updating 1K byte software-reconfigurable memory array Programmable record size Cascadable up to 256 devices Content-addressable operation, independent of record


    OCR Scan     		PDF Am95C85 16-MHz WF024080 WF024090

    stk 2230

    Abstract: stk 2229 2240 stk circuit diagram
    Text: Am95C85 Content Addressable Data Manager FINAL DISTINCTIVE CHARACTERISTICS • • • • • High-performance sorting, searching, and updating 1K byte software-reconfigurable memory array Programmable record size Cascadable up to 256 devices Content-addressable operation, independent of record


    OCR Scan     		PDF Am95C85 16-MHz TC004120 TC004140 stk 2230 stk 2229 2240 stk circuit diagram

    FND PIN DIAGRAM

    Abstract: stk 2230 2240 stk circuit diagram 95C8 stk 2229 fnd 500 95c8s FND 70
    Text: Am95C85 Content Addressable Data Manager FINAL DISTIN CTIVE CHARACTERISTICS • • • High-perform ance sorting, searching, and updating 1K byte software-reconfigurable memory array Program m able record size • Cascadable up to 256 devices • Content-addressable operation, independent of record


    OCR Scan     		PDF Am95C85 16-MHz TC004110 TC004120 FND PIN DIAGRAM stk 2230 2240 stk circuit diagram 95C8 stk 2229 fnd 500 95c8s FND 70