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MOS
MOS Field Effect Transistor
µ PA679TB
N / P MOS FET
µ PA679TB 2.5 V
µ PA679TB
mm
2.5 V
+0.1
0.2 -0
N RDS(on)1 = 0.57 VGS = 4.5 V, ID = 0.30 A
+0.1
0.