DSAZIHA100059988.pdf by American Microsemiconductor

Partial File Text 1001PGB200E Thyristors Gate Turn Off Thyristor (GTO) V(DRM) Max. (V)2.0k V(RRM) Max. (V)18 I(T) Rated Maximum (A)550Â² @Temp. (Ã¸C) (Test Condition) I(TSM) Max. (A)6.5k @ t(w) (s) (Test Conditi
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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