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    ZXTN2 Price and Stock

    Diodes Incorporated ZXTN2018FTA

    TRANS NPN 60V 5A SOT23-3
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    DigiKey ZXTN2018FTA Reel 96,000 3,000
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    Ameya Holding Limited ZXTN2018FTA 32,694
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    Diodes Incorporated ZXTN25012EFHTA

    TRANS NPN 12V 6A SOT23-3
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    DigiKey ZXTN25012EFHTA Reel 6,000 3,000
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    Avnet Americas ZXTN25012EFHTA Reel 26 Weeks 3,000
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    Newark ZXTN25012EFHTA Cut Tape 1,520 1
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    ComSIT USA ZXTN25012EFHTA 9,000
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    Diodes Incorporated ZXTN25012EFLTA

    TRANS NPN 12V 2A SOT23-3
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    DigiKey ZXTN25012EFLTA Digi-Reel 4,391 1
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    ZXTN25012EFLTA Cut Tape 4,391 1
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    ZXTN25012EFLTA Reel 3,000 3,000
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    Newark ZXTN25012EFLTA Cut Tape 2,750 5
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    RS ZXTN25012EFLTA Bulk 25
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    ComSIT USA ZXTN25012EFLTA 139,000
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    Diodes Incorporated ZXTN2005GTA

    TRANS NPN 25V 7A SOT223-3
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    DigiKey ZXTN2005GTA Digi-Reel 3,356 1
    • 1 $1.08
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    ZXTN2005GTA Cut Tape 3,356 1
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    Diodes Incorporated ZXTN2007GTA

    TRANS NPN 30V 7A SOT223-3
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    DigiKey ZXTN2007GTA Digi-Reel 3,272 1
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    ZXTN2007GTA Reel 3,000 1,000
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    ZXTN2007GTA 26
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    ZXTN2 Datasheets (119)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXTN2005G Diodes 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005G Zetex Semiconductors 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005GTA Zetex Semiconductors 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005GTC Zetex Semiconductors 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2005Z Diodes 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2005Z Zetex Semiconductors 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2005ZQTA Diodes PWR LOW SAT TRANSISTOR SOT89 Original PDF
    ZXTN2005ZTA Zetex Semiconductors 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2007G Diodes 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007G Zetex Semiconductors 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007GTA Zetex Semiconductors 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007GTC Zetex Semiconductors 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF
    ZXTN2007Z Diodes 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2007Z Zetex Semiconductors 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2007ZTA Zetex Semiconductors 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Original PDF
    ZXTN2010A Diodes 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE Original PDF
    ZXTN2010A Zetex Semiconductors 60v Npn Low Saturation Medium Power Transistor In E-line Original PDF
    ZXTN2010ASTOA Zetex Semiconductors 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE Original PDF
    ZXTN2010ASTZ Zetex Semiconductors 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE Original PDF
    ZXTN2010G Diodes 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Original PDF

    ZXTN2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXTN2007G

    Abstract: ZXTN2007GTA ZXTN2007GTC zxtn
    Text: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2007G OT223 OT223 ZXTN2007G ZXTN2007GTA ZXTN2007GTC zxtn

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ

    ZXTN2010GTA

    Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223 ZXTN2010GTA ZXTN2010G ZXTN2010GTC Bv 42 transistor

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA

    MARKING 851

    Abstract: SOT89 MARKING CODE 5A SOT89 transistor marking 851
    Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V High current capability Max Continuous Current IC = 5A


    Original     		PDF ZXTN2010Z ZXTP2012Z AEC-Q101 J-STD-020 ZXTN2010Z DS33661 MARKING 851 SOT89 MARKING CODE 5A SOT89 transistor marking 851

    ZXTN2007Z

    Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
    Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2007Z ZXTN2007ZTA TAP26100 ZXTN2007Z ZXTN2007ZTA ZXTN MARKING 7A SOT89

    ZXTP2025

    Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTP2025F ZXTN2031F ZXTP2025 zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23

    SOT89 transistor marking 5A

    Abstract: ZXTN2011Z ZXTN2011ZTA
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA

    ZXTN2011G

    Abstract: ZXTN2011GTA ZXTN2011GTC
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC

    TS16949

    Abstract: ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL
    Text: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25040DFL 350mW ZXTP25040DFL D-81541 TS16949 ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL

    ZXTN25012EFH

    Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 ZXTN25012EFH ZXTP25012EFH TS16949 ZXTP25012EFHTA

    TS16949

    Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP23015CFH -36mV ZXTN23015CFH D-81541 TS16949 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA

    ZXTN25060BZTA

    Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
    Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN25060BZ D-81541 ZXTN25060BZTA TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7

    zxtp25020cfh

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 zxtp25020cfh

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN2005G ZX5T869G OT223 OT223 ZX5T869GTA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2040F 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • BVCEO > 40V IC = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 1A


    Original     		PDF ZXTN2040F 500mV ZXTP2041F AEC-Q101 J-STD-020 MIL-STD-202, DS33668

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZXTN2005GTA ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN2005GTA ZX5T869G OT223 OT223

    ZETEX medium power complementary transistors

    Abstract: 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25040DFH -85mV ZXTN25040DFH ZETEX medium power complementary transistors 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA

    ZXTN25040DFH

    Abstract: ZXTP25040DFH ZXTP25040DFHTA Marking 024
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25040DFH -85mV ZXTN25040DFH ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA Marking 024

    relay 12v 100A

    Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to


    Original     		PDF ZXTP23015CFH -36mV ZXTN23015CFH relay 12v 100A transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA

    marking 322

    Abstract: br 2222 npn
    Text: ZXTN2031F 50V, SOT23, NPN medium power transistor Summary V BR CEV > 80V, V(BR)CEO > 50V IC(cont) = 5A RCE(sat) = 24m⍀ typical VCE(sat) < 40mV @ 1A PD = 1.2W Complementary part number: ZXTP2025F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTN2031F ZXTP2025F marking 322 br 2222 npn

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2010G OT223 OT223