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    Diodes Incorporated ZXMP3F35N8TA

    MOSFET P-CH 30V 9.3A 8SO
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    ZXMP3F35N8TA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMP3F35N8TA Zetex Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 9.3A 8SO Original PDF

    ZXMP3F35N8TA Datasheets Context Search

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    design ideas

    Abstract: TS16949 ZXMP3F35N8 ZXMP3F35N8TA 3f35 PF6000
    Text: ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery


    Original     		PDF ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248, design ideas TS16949 ZXMP3F35N8 ZXMP3F35N8TA 3f35 PF6000

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original     		PDF DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    Untitled

    Abstract: No abstract text available
    Text: ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery


    Original     		PDF ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248,

    ZXMP3F35N8

    Abstract: 3f35 TS16949 ZXMP3F35N8TA PF6000
    Text: ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery


    Original     		PDF ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248, ZXMP3F35N8 3f35 TS16949 ZXMP3F35N8TA PF6000

    Untitled

    Abstract: No abstract text available
    Text: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.


    Original     		PDF GBJ2508 DDTB123EKâ DDTB123ECâ DDTD123TKâ DDTD123TCâ GBPC2510* GBJ2510 DDTB123TKâ DDTB123TCâ DDTD123YKâ

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V BR DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance making it ideal for battery


    Original     		PDF ZXMP3F35N8 ZXMP3F35N8TA D-81541 TX75248,