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Diodes Incorporated ZXMN2A01E6TC MOSFET N-CH 20V 2.5A SOT23-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZXMN2A01E6TC	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.16896	Buy Now

ZXMN2A01E6TC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZXMN2A01E6TC		Zetex Semiconductors	FETs - Single, Discrete Semiconductor Products, MOSFET N-CHAN 20V SOT23-6		Original	PDF
ZXMN2A01E6TC		Zetex Semiconductors	20V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF

ZXMN2A01E6TC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
sot23 2A1 device Marking Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6 Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power	Original	ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC sot23 2A1 device Marking ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6	PDF
sot23-6 marking 131 Abstract: sot23 2A1 device Marking Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power	Original	ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC sot23-6 marking 131 sot23 2A1 device Marking	PDF
marking QG SOT23-6 Abstract: sot23 6 device Marking sot23 2A1 device Marking DIODES marking 2a1 MARKING 20 SOT23-6 MOSFET N SOT23-6 MOSFET sot23-6 MOSFET sot23-6 QG SOT23-6 ZXMN2A01E6 Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC marking QG SOT23-6 sot23 6 device Marking sot23 2A1 device Marking DIODES marking 2a1 MARKING 20 SOT23-6 MOSFET N SOT23-6 MOSFET sot23-6 MOSFET sot23-6 QG SOT23-6 ZXMN2A01E6	PDF
sot23 2A1 device Marking Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC MARKING 303 SOT23-6 Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC 13ephone: sot23 2A1 device Marking ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC MARKING 303 SOT23-6	PDF
Untitled Abstract: No abstract text available Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.12 ID = 3.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC	PDF