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Diodes Incorporated ZXM62N03E6TA MOSFET N-CH 30V 3.2A SOT-23-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZXM62N03E6TA	Digi-Reel			1	1 $0.73 10 $0.73 100 $0.73 1000 $0.73 10000 $0.73	Buy Now
Zetex / Diodes Inc ZXM62N03E6TA MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) - Datasheet Reference
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ZXM62N03E6TA		15,000			1 $0.66 10 $0.66 100 $0.66 1000 $0.66 10000 $0.231	Buy Now

ZXM62N03E6 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ZXM62N03E6		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF
ZXM62N03E6		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF
ZXM62N03E6		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENTMODEMOSFET		Original	PDF
ZXM62N03E6TA		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF
ZXM62N03E6TA		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF
ZXM62N03E6TC		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF
ZXM62N03E6TC		Zetex Semiconductors	30V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF

ZXM62N03E6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MOSFET 2n03 Abstract: 2n03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching	Original	ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6T864-7630 MOSFET 2n03 2n03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC	PDF
MOSFET 2n03 Abstract: 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC zxm6* sot23-6 Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching	Original	ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6Telephone: MOSFET 2n03 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC zxm6* sot23-6	PDF
4422 datasheet Abstract: A1 SOT23 zxm* sot23-6 SOT23-6 494 Text: ZXM62N03E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 DIM A1 Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110	Original	ZXM62N03E6 OT23-6 D-81673 4422 datasheet A1 SOT23 zxm* sot23-6 SOT23-6 494	PDF
Untitled Abstract: No abstract text available Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching	Original	ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6TA ZXM62N03E6TC	PDF
MOSFET 2n03 Abstract: 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC DSA003664 2N03 08 Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching	Original	ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6TA D-81673 MOSFET 2n03 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC DSA003664 2N03 08	PDF
MOSFET 2n03 Abstract: 2n03 Text: Not Recommended for New Design Please Use ZXMN3A01E6TA ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching	Original	ZXMN3A01E6TA ZXM62N03E6 OT23-6 OT23-6 ZXM62N03E6TA ZXM62N03E6TC MOSFET 2n03 2n03	PDF
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502	PDF
IRC 0805 Abstract: N2 SOT23-6 AVX 0805 dp502 b 1969 INDUCTOR CHIP FERRITE BEAD 0805 C3330 avx-1210 CIRKIT diagram Converter 24V to 12V Sanyo capacitors Text: ZXRD1000 SERIES PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple	Original	ZXRD1000 D-81673 IRC 0805 N2 SOT23-6 AVX 0805 dp502 b 1969 INDUCTOR CHIP FERRITE BEAD 0805 C3330 avx-1210 CIRKIT diagram Converter 24V to 12V Sanyo capacitors	PDF
ZXMP3A16DN8 Abstract: No abstract text available Text: 30 - 50 Volt MOSFETs A se rie s of lo w vo ltag e M O S F E T s co n ta in in g high d e n sity p lanar d e vice s o p tim ize d to p ro v id e lo w o n-resistance w ith a lo w gate charge and trench M O S F E T s. The trench M O S F E T s en a b le m uch h ig h e r current	OCR Scan	5T223 ZXMC3A16DN8 ZXMD63C03X ZXMP3A16DN8	PDF