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    ZW DIODE 5.0 Search Results

    ZW DIODE 5.0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ZW DIODE 5.0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    yh 4100

    Abstract: diode marking YG MARKING ZX sot-23 YC sot 23 CZMK22V Zx SOT-23 yl 1060 CZMK13V MARKING YG SOT-23 MARKING YG SOT23
    Text: RECTRON CZMK Series SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 DUAL ZENER DIODE Common Cathode SOT- 23 Absolute Maximun Ratings (Ta=25oC) Symbol Value Unit Power Dissipation at Tamb = 25 °C P tot 300 mW Junction Temperature Storage Temperature Tj Ts Zener Current see Table ""Chara.""


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    PDF OT-23 CZMK10V CZMK11V CZMK12V CZMK13V CZMK15V CZMK16V CZMK18V CZMK20V CZMK22V yh 4100 diode marking YG MARKING ZX sot-23 YC sot 23 CZMK22V Zx SOT-23 yl 1060 CZMK13V MARKING YG SOT-23 MARKING YG SOT23

    transistor smd zG

    Abstract: diode 400mw 4v7 smd transistor marking wy smd diode marking 325 smd transistor marking zg ZD 5V6 zener SMD XW transistor smd za transistor smd zc wy smd transistor
    Text: Diodes SMD Type Zener Diodes BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation


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    PDF BZX284 OD110 400mW BZX284 transistor smd zG diode 400mw 4v7 smd transistor marking wy smd diode marking 325 smd transistor marking zg ZD 5V6 zener SMD XW transistor smd za transistor smd zc wy smd transistor

    Diode SMA marking code ye

    Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
    Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)


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    PDF TV04A5V0-HF TV04A441-HF SMA/DO-214AC QW-JTV01 Diode SMA marking code ye smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL

    diode zener ZL 27

    Abstract: diode zener ZD 260 diode zener smd zk Zener diode zf 2.7 diode zener ZD 15 smd diode MARKING ZK diode zd 329 diode zener ZD 75 v diode zener ZD 7,5V diode zener ZL 7
    Text: BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features C A —Wide zener voltage range selection : 2.4V to 75V —VZ Tolerance Selection of ±5% D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate


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    PDF BZT52C2V4S-BZT52C75S 200mW, OD-323F OD-323 MIL-STD-202, diode zener ZL 27 diode zener ZD 260 diode zener smd zk Zener diode zf 2.7 diode zener ZD 15 smd diode MARKING ZK diode zd 329 diode zener ZD 75 v diode zener ZD 7,5V diode zener ZL 7

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation


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    PDF BZX284 OD110 400mW BZX284

    smd zm diode

    Abstract: No abstract text available
    Text: BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B C Features A ­Wide zener voltage range selection : 2.4V to 75V ­VZ Tolerance Selection of ±5% D ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate


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    PDF BZT52C2V4S-BZT52C75S 200mW, OD-323F OD-323 MIL-STD-202, smd zm diode

    scr kp 1800

    Abstract: KS600 KP1000 ctk 15-2 KP3000 KP500 kp4000 KS500 KS800 KS20
    Text: Contents 1. Phase Control Thyristors 2. Fast Switching Thyristors 3. Fast Frequency Thyristors 4. High Temperature Thyristors 5. Triacs 6. General Rectifier Diodes 7. Fast Recovery Rectifier Diodes 8. High Temperature Rectifier Diodes 9. Soft 10. Small Recovery Diodes


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    pj 59 diode

    Abstract: MMG05N60D 432T R13JA
    Text: . MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMG05N60D/D DATA Designer3TM Data Sheet Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode E Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in effi~ent


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    PDF MMG05N60D/D OT223) I-60C-774-1 MMGo5N60D/D pj 59 diode MMG05N60D 432T R13JA

    bosch ecu 0 261 200 218 connection diagram

    Abstract: CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838
    Text: Canada Wieland Electric Inc. 2889 Brighton Road Oakville, Ontario L6H 6C9 Phone: 905 829-8414 Fax: (905) 829-8413 e-mail: [email protected] On the Internet: www.wielandinc.com DIN rail terminal blocks • with screw connection • with spring connection


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    PDF 1-800-wieland bosch ecu 0 261 200 218 connection diagram CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838

    ZWS15-15

    Abstract: ZW DIODE 5.0 ZWS-30-12 printer power supply 24V 5V ZW DIODE
    Text: Worldwide, low cost power supplies Radiated & Conducted EMI per EN55022-B & FCC Class B. Lambda’s ZWS Series of single output power supplies is a PCB style power supply with continuous wide range or auto-ranging AC input. They are Universal AC Input engineered to EN61000-4 -2,-3,-4,-5,-6 , and


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    PDF EN55022-B EN61000-4 EN61000-3-2 pack50 ZWS120 ZWS10 ZWS100 ZWS15-15 ZW DIODE 5.0 ZWS-30-12 printer power supply 24V 5V ZW DIODE

    ZW-101PG1

    Abstract: ET 439 power module fuji LCD lg 500g monitor DUNT-5784NCZZ JW-12PM Fuse RH A4 2A 250V Fuse FGMB 250V 2A jw-13s schematic LG TV lcd backlight inverter Fuse FGMB 250V 5A
    Text: Program mable controller Wew Satellite Jw Model name JW50H/70H/100H User's Manual/Hardware version We thank you for your purchase of the SHARP programmable controller new satellite JW 50H/ 70H/100H. This booklet user's manual, hardware version explains mainly the JW 30H’s hardware; the


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    PDF JW50H/70H/100H 70H/100H. 50H/70H/100H ZW-101PG1 ET 439 power module fuji LCD lg 500g monitor DUNT-5784NCZZ JW-12PM Fuse RH A4 2A 250V Fuse FGMB 250V 2A jw-13s schematic LG TV lcd backlight inverter Fuse FGMB 250V 5A

    5167PBTL

    Abstract: A1930 YC-160R ZWS100AF YC-110R FUSE B 7WS JST Connectors Type VHR ZWS75AF CN53 YRS-110
    Text: DENSEI-LAMBDA ZWS-AF Series INSTR UCTIONMANUAL ZWS-AF Series ZWSSOAF/75AF/100AF/150AF Instruction Manual BEFORE USING THE POW ER SUPPLY UNIT ' — Pay attention to all w arnings and cautions before using the unit. Incorrect usage could lead to an electrical


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    PDF ZWS50AF /75AF /IOOAF/15 ZWS50AF ZWS75AF ZWS100AF ZWS150AF 5167PBTL A1930 YC-160R ZWS100AF YC-110R FUSE B 7WS JST Connectors Type VHR ZWS75AF CN53 YRS-110

    6c2 diode

    Abstract: 6c2 transistor transistor cg sot-23 BSS138
    Text: BSS138 M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 5 0 V , 0 .2 2 A , Rds ON =3.5 Q Rds(on)=6£2 @V gs=1 0V. @Vgs=4.5V. • High dense cell design for low R d s (o n >.


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    PDF BSS138 OT-23 OT-23 6c2 diode 6c2 transistor transistor cg sot-23 BSS138

    FPA100

    Abstract: infrared transmission distance sensor 050in A101 FPA101 FPA102 photo dioda" IR sensor and photo diode pair lc 7400
    Text: 1-9 Photo Arrays i Source If Device No. Description VF ip = 50 mA m A /c e ll V Max Typ Sensor •CE{H v CE sat) H = 1.0 m W /cm 2 (GaAs) Matching Factor VCE = 5.0 V ■CE = 4.0 mA mA V Typ Typ ip = 50 mA VCE = 5.0 V Distance = 0.05" Min Typ ■oUTÍMin)


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    PDF FPA100 FPA101 12-Element FPA102 10-Element FPA100 FPA101 FPA100, infrared transmission distance sensor 050in A101 photo dioda" IR sensor and photo diode pair lc 7400

    Untitled

    Abstract: No abstract text available
    Text: REFERENCE DATAI KV1811K S P E C I F I C A T I ON 199, 3 , 2 TABLE OF C O N T EN T S 1. PURPOSE 2. TOKO PART NUMBER 3. APPLICATIONS 4 . STRUCTURE - 5. PACKAGE OUTLINE 6. PIN LAYOUT S IG N A T U R E DATE 7. PACKAGE OUTLINE D IM EN SIO N S/ Drawn By MARKING °l


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    PDF KV1811K DB3-K044 diodeKV1811K.

    LD21A

    Abstract: No abstract text available
    Text: Advanced S F R /U 9 2 3 4 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on - lD = -4.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V


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    PDF -250V SFR/U9234 200nF> LD21A

    VEB mikroelektronik

    Abstract: 4565 D A2005V KP303 KP303D U806D analoge schaltkreise a4100d A209K sf126d
    Text: DATEN BUCH 0 /x *«» Der vorliegende T ite l ist ein w eite re r Band d er D aten­ buch-R eihe Uber die M ikroelektronik. B auelem ente Die A pplikationszentrum R eihe wird Elektronik des im Berlin VEB Kom binat A uftrag des und des VEB M ilitär­ verlages herausgegeben.


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    C4371

    Abstract: R-315 Ft-313 R-313 Senisys R-310 R-311 R-312 R-314 310 series
    Text: MDE D • 34=^730 GGGlS3fl 1 ISENI R-310 Series Wafer Skanner Reflective Optical Switch FASCO INDS/ SEN ISV S - -Ik 0.S00 C12.7Û3 NOM 0.100 12.543 NDH PHOTODETECTOR RED " t: 'f _ I 0.605 C15.373 0.595 C15.113 Features DIMENSIONS ARE IN INCHES H ILLIM E TÇR SÎ


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    PDF R-310 R-311, R-312 Ft-313 R-311 R-313 C4371 R-315 Ft-313 Senisys R-311 R-314 310 series

    Untitled

    Abstract: No abstract text available
    Text: Opto Semiconductors Gabellichtschranke mit Schmitt-Trigger IC Slotted Interrupter with Schmitt-Trigger-IC SFH 9340, SFH 9341 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale • kompaktes Gehäuse


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    SWT65-522

    Abstract: SWT30-5FF SWT30 5FF SWT30 EN55022-B CSA950 12V2A SWT40-522 5V3A lambda lwt-3h-5ff
    Text: SWT Series Lrrev cose irfple Radiated & Conducted EMI per EN55022-B & FCC Class B power supplies Lambda’s SWT series of triple output PCB style power supplies have a continuous wide range or auto ranging AC input and EMI to curve B. Full power is Universal AC Input


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    PDF EN55022-B SWT65-522 SWT100-525 SWT100-S22 SWT100-5FF SWT30 SWT40 H52J0L SWT100 SWT65-522 SWT30-5FF 5FF SWT30 EN55022-B CSA950 12V2A SWT40-522 5V3A lambda lwt-3h-5ff

    54F10

    Abstract: 74F10
    Text: NATIONAL SEMICOND -CLOGICJ I D E D | b S O l l S E - GObTOTM S | T -M 3-15 u> ZW A N a t io n a l ä im S e m ic o n d u c to r 54F/74F51 2-2-2-3 AND-OR-Invert Gate Ordering Code: seesection5 Logic Symbol Connection Diagrams IEEE/IEC Pin Assignment for LCC and PCC


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    PDF 54F/74F51 TL/F/9468-2 54F/74F A/20mA 54F10 74F10

    Untitled

    Abstract: No abstract text available
    Text: COAXIAL PIN DIODE ATTENUATOR ML 6610-100 SERIES REFLECTIVE ATTENUATOR 1.0 TO 18.0 GHz FEATURES ♦ Broad Frequency Ranges ♦ Low Insertion Loss ♦ Current Controlled ♦ Low Cost ♦ Hermetically Sealed DESCRIPTION The ML 6610-100 Series of reflective attenuators from M/A-COM Ltd offers continuously variable attenuation over a


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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POW ER M OSFET FS30SMH-06 HIGH-SPEED SWITCHING USE FS30SMH-06 • 2.5V DRIVE • VDSS .60V . 30m£2 • r D S O N (M A X )


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    PDF FS30SMH-06

    Untitled

    Abstract: No abstract text available
    Text: FF 600 R 16 KF 1 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1600 V 600 A 1200 A 3900 W V qe 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte


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    PDF 34D3ET7