Untitled
Abstract: No abstract text available
Text: ZIP20-P-400-1.27-W1 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.70 TYP. 3 版/96.12.5
|
Original
|
PDF
|
ZIP20-P-400-1
27-W1
|
Untitled
Abstract: No abstract text available
Text: ZIP20-P-400-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.50 TYP. 3/Dec. 5, 1996
|
Original
|
PDF
|
ZIP20-P-400-1
|
Untitled
Abstract: No abstract text available
Text: ZIP20-P-400-1.27-W1 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.70 TYP. 3/Dec. 5, 1996
|
Original
|
PDF
|
ZIP20-P-400-1
27-W1
|
diode W1
Abstract: No abstract text available
Text: ZIP20-P-400-1.27-W1 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
|
Original
|
PDF
|
ZIP20-P-400-1
27-W1
diode W1
|
20pin
Abstract: 20P5A
Text: 20P5A Plastic 20pin 325mil ZIP EIAJ Package Code ZIP20-P-325-1.27 Weight g 1.0 JEDEC Code – Lead Material Cu Alloy D A L A1 A2 E 20 1 c e1 SEATING PLANE Symbol e b A A1 A2 b c D E e e1 L Dimension in Millimeters Min Nom Max 8.3 – – 0.9 – – 6.3 –
|
Original
|
PDF
|
20P5A
20pin
325mil
ZIP20-P-325-1
20P5A
|
zip20
Abstract: No abstract text available
Text: ZIP20-P-400-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
|
Original
|
PDF
|
ZIP20-P-400-1
zip20
|
Untitled
Abstract: No abstract text available
Text: ZIP20-P-400-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.50 TYP. 3 版/96.12.5
|
Original
|
PDF
|
ZIP20-P-400-1
|
MSM514256C
Abstract: DIP20-P-300-2 MSM514256CL
Text: E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
|
Original
|
PDF
|
E2G0010-17-41
MSM514256C/CL
144-Word
MSM514256C/CL
20-pin
26/20-pin
MSM514256C
DIP20-P-300-2
MSM514256CL
|
MSM51V1000A
Abstract: ZIP20
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
J2G0056-17-41
MSM51V1000A
MSM51V1000A
576-Word
MSM51V1000ACMOS1
41CMOS
26/20SOJ20ZIP
5128ms
26/20300milSOJ
20400milZIP
ZIP20
|
MSM51V4221C-40RA
Abstract: MSM51V8221A MSM51V4221C MSM51V4221C-30RA
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
|
CA10
Abstract: ZIP20
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
J2G0149-29-41
MSM514102D/DL
MSM514102D/DL
304-Word
MSM514102D/DLCMOS4
41CMOS
26/20SOJ20ZIP26/20TSOP
02416ms1
024128msL-
26/20300milSOJ
CA10
ZIP20
|
Untitled
Abstract: No abstract text available
Text: Uniti m P-ZIP20/19-400-1.27 3, 05+0, 2 OJ X o +1 00 v£> co CU o +1 o c O -c o o +1 in -co 0. 25 ÌfUs 2, 54 26, 3MAX ._ 25, 8±0, 2_ . rV V V V L^4rI4rI4rI4r^ 12 9 11 20 Mar,2006
|
OCR Scan
|
PDF
|
ZIP20/19â
835TYP
|
Untitled
Abstract: No abstract text available
Text: P-ZIP20/19-400-L27 U nit m Mar,2006
|
OCR Scan
|
PDF
|
ZIP20/19â
|
ZIP20
Abstract: No abstract text available
Text: P-ZIP20-400-L27A Unit m Mar,2006
|
OCR Scan
|
PDF
|
ZIP20â
ZIP20
|
|
|
Untitled
Abstract: No abstract text available
Text: T E N T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D E SC R IP T IO N T h e T C 511002A P /A J/A Z is the new generation dynam ic RAM organized 1,048,576 words by 1 bit. T h e T C 511002A P /A J/A Z u tilizes TO SH IBA’S CMOS Silicon gate process technology as w ell as advanced
|
OCR Scan
|
PDF
|
11002A
TC511002A
TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
|
A100COLUMN
Abstract: No abstract text available
Text: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC514101AP/AJ/ASJ/AZ
300/350mil)
TC514101AP/ASJ/AZ.
TC514101AP/AJ/ASJ/AZ-60
A100COLUMN
|
tc51100ap
Abstract: DIP18-P-300E TC514100
Text: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC514100AF/AJ/ASJ/AZ
TC514100AP/AJ/ASJ/AZ
300/350mil)
TC514100AP/AJ/ASJ/AZ.
TC5141
TC514100AP/AJ/ASJ/AZ-80
tc51100ap
DIP18-P-300E
TC514100
|
TC514100
Abstract: 514100A
Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
|
OCR Scan
|
PDF
|
--------------TC514100ASJ/AZ/AFT-60/70/80
TC514100A
TC514410ASJ/AZ/AFT
300mil)
TC51400/ASJ/A27AFT.
TC514100
514100A
|
KSR128
Abstract: a95x A348 20 pin
Text: TC514400ÂPL/ÂJL/ASJL/AZL-60 * This is advanced information and specifica tions are subject to change without notice. 1,048,576 W ORD x 4 BIT D YN A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by
|
OCR Scan
|
PDF
|
TC514400
JL/ASJL/AZL-60
TC514400APL/AJL/ASJL/AZL
300/350mil)
TC514400APL/AJL/ASJL/AZL.
a512K
TC514400APL/AJL/ASJL/AZL-60
KSR128
a95x
A348 20 pin
|
bq785
Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Text: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and
|
OCR Scan
|
PDF
|
E2G0022-17-41
MSM5141
304-Word
MSM514100D/DL
a26/20-pin
20-pin
26/20-pin
bq785
20-P-300-1
MSM514100DL
ZIP20-P-400-1
msm514100d
|
MSM511000
Abstract: ZIP20-P-400 dip26
Text: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is
|
OCR Scan
|
PDF
|
MSM511000B/BL
576-Word
MSM511000B/BL
18-pin
26/20-pin
20-pin
MSM511000BL
MSM511000
ZIP20-P-400
dip26
|
MSM511000
Abstract: ZIP20-P-400 msm511000h
Text: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power
|
OCR Scan
|
PDF
|
MSM511000H_
576-Word
MSM511000H
18-pin
26/20-pin
20-pin
MSM511000
ZIP20-P-400
|
T02I
Abstract: 26-PIN ZIP20-P-400 514100B
Text: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM514100B
MSM514100BL
304-Word
MSM514100B/BL
cycles/16ms,
cycles/128ms
2424G
T02I
26-PIN
ZIP20-P-400
514100B
|
Untitled
Abstract: No abstract text available
Text: 1,048,576 W O R D X 4 BIT D YN A M IC RAM * This is advanced information and specifica tions are subject to change without notice. DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC514410AP/AJ/ASJ/AZ
350mil)
TC51441OAP/AJ/ASJ/AZ-60
|