Diode LT 228
Abstract: diode lt 205 CDLL4735A CDLL4764A CDLL4728A CDLL4729A CDLL4730A CDLL4731A CDLL4732A CDLL4733A
Text: CDLL4728 thru CDLL4764A and CDLL1W110 • 1 WATT ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 20mW / °C above TEC = +125°C
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CDLL4728
CDLL4764A
CDLL1W110
200mA:
CDLL4728A
CDLL4729SURFACE
CDLL4728
CDLL4764A
Diode LT 228
diode lt 205
CDLL4735A
CDLL4728A
CDLL4729A
CDLL4730A
CDLL4731A
CDLL4732A
CDLL4733A
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Untitled
Abstract: No abstract text available
Text: CDLL4728 thru CDLL4764A and CDLL1W110 • 1 WATT ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 20mW / °C above T EC = +125°C
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CDLL4728
CDLL4764A
CDLL1W110
200mA:
CDLL4728
CDLL4764A
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Diode LT 228
Abstract: CDLL1W110 CDLL4728 CDLL4728A CDLL4729A CDLL4730A CDLL4731A CDLL4732A CDLL4733A CDLL4734A
Text: CDLL4728 thru CDLL4764A and CDLL1W110 • 1 WATT ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 20mW / °C above TEC = +125°C
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CDLL4728
CDLL4764A
CDLL1W110
200mA:
CDLL4728A
CDLL472URFACE
CDLL4728
CDLL4764A
Diode LT 228
CDLL1W110
CDLL4728A
CDLL4729A
CDLL4730A
CDLL4731A
CDLL4732A
CDLL4733A
CDLL4734A
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ZENER DIODE 5v CAPACITY
Abstract: SMD ZENER DIODE smd zener diode 5v SOT-23 smd zener diode 6v zener 6v diode smd zener diode 5v smd zener smd diode br "Zener Diode" Diode LT 450
Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SD2028 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacity. 0.55 With Zener diode 11±3V between collector and base. 2 +0.1 0.95-0.1
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2SD2028
OT-23
100mA
ZENER DIODE 5v CAPACITY
SMD ZENER DIODE
smd zener diode 5v SOT-23
smd zener diode 6v
zener 6v diode
smd zener diode 5v
smd zener
smd diode br
"Zener Diode"
Diode LT 450
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zener diode 1n4148
Abstract: diode zener 1N4148 h8 diode zener 1n4148 zener diode LM199
Text: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES n n n n n n n n DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long-Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements
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LTZ1000/LTZ1000A
05ppm/Â
LTZ1000A
LTZ1000
LT1236
LT1389
800nA,
10ppm/Â
zener diode 1n4148
diode zener 1N4148
h8 diode zener
1n4148 zener diode
LM199
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lt0412
Abstract: h8 diode zener LTZ1000 ltz1000 application notes diode zener 1N4148 LM199
Text: LTZ1000/LTZ1000A Ultra Precision Reference Features Description 1.2µVP-P Noise 2µV/√kHr Long-Term Stability n Very Low Hysteresis n 0.05ppm/°C Drift n Temperature Stabilized n 400°C/W Thermal Resistance for LTZ1000A Reduces Insulation Requirements n Specified for –55°C to 125°C Temperature Range
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LTZ1000/LTZ1000A
05ppm/
LTZ1000A
LTZ1000
800nA,
10ppm/
650nVP-P
lt0412
h8 diode zener
ltz1000 application notes
diode zener 1N4148
LM199
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CZRL55C2V7-G
Abstract: CZRL55C15-G CZRL55C13-G CZRL55C12-G CZRL55C11-G CZRL55C10-G CZRL55C3V6-G CZRL55C3V0-G CZRL55C2V4-G CZRL55C3V3-G
Text: SMD Zener Diode CZRL55C2V4-G Thru CZRL55C75-G Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features SOD-80 MiniMELF -Silicon epitaxial power Zener diodes. -For use as low voltage stabilizer or voltage reference. -The Zener voltages are graded according to the international E24
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CZRL55C2V4-G
CZRL55C75-G
OD-80
OD-80)
QW-BZ012
CZRL55C2V7-G
CZRL55C15-G
CZRL55C13-G
CZRL55C12-G
CZRL55C11-G
CZRL55C10-G
CZRL55C3V6-G
CZRL55C3V0-G
CZRL55C3V3-G
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DIODE SMD ON 012
Abstract: No abstract text available
Text: SMD Zener Diode CZRL55C2V4-G Thru CZRL55C75-G Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features SOD-80 MiniMELF -Silicon epitaxial power Zener diodes. -For use as low voltage stabilizer or voltage reference. -The Zener voltages are graded according to the international E24
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CZRL55C2V4-G
CZRL55C75-G
OD-80
OD-80)
Characteristi14
QW-BZ012
DIODE SMD ON 012
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137 742a
Abstract: 1SMA200Z 1SMA4737 1SMA4738 1SMA4739 zener diode marking 182 743A zener 751a zener diode SM ZENER SINGLE COLOR CODE
Text: 1SMA4737 - 1SMA200Z SEMICONDUCTOR [SB TAIWAN Pb 1.0 Watts Surface Mount Silicon Zener Diode SM A/DO-214AC RoHS COMPLIANCE .062 1.58 .060(1.27) E[ Features -$• -Y - ■0- ^ -$■ UL Recognized File # E -32 62 43 Qualified as per A E C -Q 1 01 For surface mounted applications in order to
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1SMA4737
1SMA200Z
/DO-214AC
E-326243
AEC-Q101
1SMA200Z)
137 742a
1SMA4738
1SMA4739
zener diode marking 182
743A
zener 751a
zener diode SM
ZENER SINGLE COLOR CODE
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1S1618
Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Text: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS
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1N957B
1N992B
1N962B
MIL-S-195Q0/117
1N973B
1NJ57Í
1N93I«
1N9S08
1H961B
1S1618
IN987B
do-7 diode iss
IN987
IN9778
ic 957B
SJ 76 A DIODE EMI
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CD5279B
Abstract: CD5265B zener diode si 18 1n522ib CD5221B CD5222B CD5223B CD5224B CD5225B CD5226B
Text: jCOMPENSATED DEVICES INC . * M l R DIODE CHIPS' ;— EQE D I 2305554 DÖD041D 1 ' • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B • ELECTRICALLY EQUIVALENT TO 1N522IB THRU 1N5281B thru . GENERAL PURPOSE 500 mW CHIPS CD528I1B • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
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D041D
1n522ib
1n5281b
CD5221B
CD528I1B
CD5221B
CD5222B
CD5223B
CD5224B
CD5225B
CD5279B
CD5265B
zener diode si 18
CD5226B
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STMicroelectronics datasheet LF33
Abstract: MELF dimensions st CDLL6309 CDLL6310 CDLL6312 CDLL6313 CDLL6314 CDLL6315 CDLL6316 CDLL6317
Text: c o m p e n s a t e » d e v i c e s T nT ZOE D S3DSSS4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION
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CDLL6309
CDLL6355
500mW
33mW/C
200mA:
250pA
250/iA
DO-213AA
DO-213AB
STMicroelectronics datasheet LF33
MELF dimensions st
CDLL6309
CDLL6310
CDLL6312
CDLL6313
CDLL6314
CDLL6315
CDLL6316
CDLL6317
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Untitled
Abstract: No abstract text available
Text: c o m p e n s a t e » d e v i c e s T nT ZOE D 23025S4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION
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23025S4
CDLL6309
CDLL6355
500mW
33mW/C
200mA:
CDLL6309
CDLL6310
C0LL6311
CDLL6312
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Untitled
Abstract: No abstract text available
Text: 1N754A-1 thru 1N759A-1 DO-35 ☆JANS* Microsemi Corp. ' The diode experts SANTA A N A , CA SC O TTSD A LE, A Z For m ore inform ation call: 714 979-8220 SILICON 400 mW ZENER DIODES FEATURES • Z E N E R VOLTAGE 6.8 V to 12.0 V • A V A ILA B LE IN J A N . J A N T X . JA N T X V -1 AND JA N S Q UALIFICATIO NS TO M IL-S -19 5 0 0 /1Z7
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1N754A-1
1N759A-1
DO-35
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Cesiwid
Abstract: 1,0F 5,5v MAXCAP LT055474A LP055104A 5.5v 0.047f lc055104 LP055105A LC055225A LF055104A
Text: CESIWID Maxcap Double layer Capacitors Maxcap Double Layer Capacitors T a b le o f C o n t e n t s ^ P r o d u c t In fo r m a tio n a n d 1 Product O v e rv ie w . 3
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CDLL4460
Abstract: CDLL4461 CDLL4462 CDLL4463 CDLL4464 CDLL4465 CDLL4467 CDLL4468 CDLL4496
Text: I COMPENSATED DEVICES INC ' 20E D 53Q5SS4 QQGQ3QÔ T r - h-I s' • 1.5 WATT ZENER DIODE CDLL4460 • LEADLESS PACKAGE FOR SURFACE MOUNT thru • METALLURGICALLY BONDED C CDLL4496 • DOUBLE SLUG CONSTRUCTION MAXIMUM RATINGS -65°C to +175°C O p e ra tin g Tem perature:
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E3G255l4
CDLL4460
CDLL4496
200mA
10mV//Â
DO-213AB,
CDLL4460
CDLL4461
CDLL4462
CDLL4463
CDLL4464
CDLL4465
CDLL4467
CDLL4468
CDLL4496
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Untitled
Abstract: No abstract text available
Text: COMP ENSATED DEVICES INC HOE D 23Q2554 000031b T T'" 1 1 - / 3 CDLL4728 thru • 1 WATT ZENER DIODES CDLL4764A • LEADLESS PACKAGE FOR SURFACE MOUNT r and CDLL1W110 • DOUBLE SLUG CONSTRUCTION thru CDLL1W200A M AXIM U M RATINGS O p e r a t in g T e m p e r a tu r e s :
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23Q2554
000031b
CDLL4728
CDLL4764A
CDLL1W110
CDLL1W200A
200mAi
CDLL4728A
CDLL4729A
CDLL4730A
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TRANSZORB diode
Abstract: 450w smps 5KE350 200 ampere and 400 volt MOSFET smps 450W
Text: THE USE OF TRANSZORB DIODES WITH POWER MOSFETS by Jon D. Paul and Bill Roehr ABSTRACT P o w e r M O S F E T s have a m o re ra p id c o s t vs. b re a k The T ra n s Z o rb d io d e serves a d u a l a p p lic a tio n ; a d o w n vo lta g e tra d e o ff th a n d o b ip o la r devices. T ra n
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CAP FEED THRU
Abstract: CDLL4728 CDLL4728A CDLL4729A CDLL4730A CDLL4731A CDLL4732A CDLL4733A CDLL4734A CDLL4764A
Text: COMPENSATED DEVICES INC HOE D 23Q2554 000031b T T '" 1 1 - / 3 CDLL4728 thru • 1 WATT ZENER DIODES CDLL4764A • LEADLESS PACKAGE FOR SURFACE MOUNT and CDLL1W110 • DOUBLE SLUG CONSTRUCTION thru CDLL1W200A MAXIMUM RATINGS O p e r a t in g T e m p e r a tu r e s :
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23Q2554
000031b
CDLL4728
CDLL4764A
W200A
67mW/Â
200mA:
DO-213AA
DO-213AB
CAP FEED THRU
CDLL4728
CDLL4728A
CDLL4729A
CDLL4730A
CDLL4731A
CDLL4732A
CDLL4733A
CDLL4734A
CDLL4764A
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zener diode z9 b1
Abstract: C1Z5.1B 2 Watt Zener Diode Central semiconductor zener Zener S 118 1N4728A 6.8 B1 zener 1N4730A 1N4731A 1N4751A
Text: -CENTRAL ~bï SEMI CONDUCTOR d eÏ □ □ □02t,4 i 1 ~T - a - t 3 - f- U - lS 1 Watt Zener Diode • 5% Tolerance • Case Br Zener Voltage Vz@lz Test Current lz Zener Impedance Zz Volts mA Ohms Zener Voltage Vz @lz Test Current lz Zener Impedance Zz TYPE NO.
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1N4728A
1N4750A
C1Z27B
1N4729A
1N4751A
C1Z30B
1N4730A
1N4752A
C1Z33B
1N4731A
zener diode z9 b1
C1Z5.1B
2 Watt Zener Diode
Central semiconductor zener
Zener S 118
6.8 B1 zener
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Untitled
Abstract: No abstract text available
Text: 1N5913 thru 1N5956D I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1 .5 W A T T H E R M E T IC A L L Y S E A L E D G L A S S S IL IC O N Z EN ER DIODES MAXIMUM RATINGS * FEA T U R ES Operating Temperature: Storage Temperature: • Withstands Large Surge Stresses
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1N5913
1N5956D
1N5913
1DDD37&
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Untitled
Abstract: No abstract text available
Text: R O P E R A TIO N A L A M P LIFIE R S FEATURES • HIGH VOLTAGE — 450V ±225V • HIGH SLEW RATE — IOOOV/.llS • HIGH OUTPUT CURRENT — 200mA APPLICATIONS • • • • HIGH VOLTAGE INSTRUMENTATION PIEZO TRANSDUCER EXCITATION PROGRAMMABLE POWER SUPPLIES UP TO 430V
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200mA
200mA.
PA85U
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D0-213AA
Abstract: No abstract text available
Text: I COMPENSATED D E V I C E S I NC ' 2 0E D 5 3 Q5 S S 4 QQGQ3QÔ T r - h-I s' • 1.5 WATT ZENER DIODE CDLL4460 • LEADLESS PACKAGE FOR SURFACE MOUNT thru • METALLURGICALLY BONDED C CDLL4496 • DOUBLE SLUG CONSTRUCTION MAXIMUM RATINGS -65°C to +175°C
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CDLL4460
CDLL4496
10mV//
200mA
CDLL4460
CDLL4461
CDU4462
CDLL4463
CDLL4464
CDLL4465
D0-213AA
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Untitled
Abstract: No abstract text available
Text: H P ! * 't * » - • * « .1 w - ' t .» > PA85 •PA85A APEX MICROTECHNOLOGY CORPORATION « APPLICATIONS HOTLINE 8 0 0 546-APE X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • HIGH VOLTAGE — 450V • HIGH SLEW RATE — 1000V/|iS • HIGH OUTPUT CURRENT — 200mA
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PA85A
546-APEX
200mA
200mA.
PA85U
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