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    Z0 SOT23 Search Results

    Z0 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    Z0 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFQ 85

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23
    Text: NPN Silicon RF Transistor BFQ 29P ● For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ● CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


    Original     		PDF Q62702-F659 OT-23 BFQ 85 RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23

    Transistor BFR 97

    Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
    Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    Original     		PDF Q62702-F1051 OT-23 Transistor BFR 97 Transistor BFR 37 Q62702-F1051 Transistor BFR 98

    45256

    Abstract: IC 4090 KGF1256P 56728
    Text: ODRKGF1256P-03 Electronic Components KGF1256P Issue Date:Jan 20, 2006 Medium-Power Amplifier GENERAL DESCRIPTION The KGF1256P is a medium-power IC, with frequency ranging from the UHF-band to the L-band that features high output power, low noise, and low current operation. The KGF1256P specifications are guaranteed to a


    Original     		PDF ODRKGF1256P-03 KGF1256P KGF1256P 850MHz; 15dBm 45256 IC 4090 56728

    VGD15

    Abstract: 56728 KGF1256P
    Text: ODRKGF1256P-01 Electronic Components KGF1256P Issue Date:Dec 22, 2003 Preliminaly Medium-Power Amplifier GENERAL DESCRIPTION The KGF1256P is a medium-power IC, with frequency ranging from the UHF-band to the L-band that features high output power, low noise, and low current operation. The KGF1256P specifications are guaranteed to a fixed


    Original     		PDF ODRKGF1256P-01 KGF1256P KGF1256P 850MHz; 15dBm VGD15 56728

    Transistor BFR

    Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1086 OT-23 Transistor BFR Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93

    RF mixer L-Band

    Abstract: T4 3570 KGF1531P t4 and 3570 9746 using 7910 im3 GC510 Z0100 3570 1321
    Text: ODRKGF1531P-01 Electronic Components KGF1531P Issue Date:Sep 30, 2003 Dual Gate IC GENERAL DESCRIPTION The KGF1531P is a high-performance GaAs FET small-signal dual gate mixer for the L-band frequencies that feature features low voltage operation, low current operation, high conversion gain, and low distortion. The


    Original     		PDF ODRKGF1531P-01 KGF1531P KGF1531P RF mixer L-Band T4 3570 t4 and 3570 9746 using 7910 im3 GC510 Z0100 3570 1321

    Transistor BFR 93

    Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1086 OT-23 Transistor BFR 93 Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35

    BFR 965

    Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
    Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1315 OT-23 BFR 965 BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705

    spice germanium diode

    Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
    Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23


    Original     		PDF OT143 SC-59 SC-70 SC-88 SC-75 OT223 BD839. O-202 spice germanium diode SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100

    MARKING CODE 618 SOT23

    Abstract: MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23
    Text: Not for new design, this product will be obsoleted soon BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component


    Original     		PDF BFR93A/BFR93AR/BFR93AW 2002/95/EC 2002/96/EC OT323 BFR93A BFR93AR 18-Jul-08 MARKING CODE 618 SOT23 MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23

    BFR93AW-GS08

    Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035
    Text: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF BFR93A/BFR93AR/BFR93AW 2002/95/EC 2002/96/EC OT323 BFR93A BFR93AR BFR93ed 08-Apr-05 BFR93AW-GS08 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035

    MAX7248

    Abstract: AAIU
    Text: 19-2119; Rev 1; 10/01 Standard Definition Video Reconstruction Filters and Buffers Features ♦ Ideal for CVBS, Y/C S-Video , and RGB (Y Pb Pr) Outputs for NTSC, PAL, and SDTV ♦ 6th-Order Lowpass Filter ♦ Drives Two 150Ω Video Loads ♦ Four Levels of Passband High-Frequency


    Original     		PDF MAX7428/MAX7430/MAX7432 MAX7428/MAX7430/ MAX7432 MAX7428 MAX7430 MAX7432 MAX7430 MAX7428/MAX7430/MAX7432 MAX7248 AAIU

    encoder 10k

    Abstract: MAX7432 MAX7432EUD MAX7428 MAX7428EKA-T MAX7430 MAX7430EUB MAX7248 AAIU
    Text: 19-2119; Rev 1; 10/01 Standard Definition Video Reconstruction Filters and Buffers Features ♦ Ideal for CVBS, Y/C S-Video , and RGB (Y Pb Pr) Outputs for NTSC, PAL, and SDTV ♦ 6th-Order Lowpass Filter ♦ Drives Two 150Ω Video Loads ♦ Four Levels of Passband High-Frequency


    Original     		PDF MAX7428) 10-Pin MAX7430) 14-Pin MAX7432) MAX7428EKA-T OT23-8 MAX7430EUB MAX7432EUD MAX7428/MAX7430/MAX7432 encoder 10k MAX7432 MAX7432EUD MAX7428 MAX7428EKA-T MAX7430 MAX7430EUB MAX7248 AAIU

    LMH6559

    Abstract: SNOSA57C CLC730245 CLC730136
    Text: LMH6559 www.ti.com SNOSA57C – APRIL 2003 – REVISED MARCH 2013 LMH6559 High-Speed, Closed-Loop Buffer Check for Samples: LMH6559 FEATURES DESCRIPTION • • • • • • • The LMH6559 is a high-speed, closed-loop buffer designed for applications requiring the processing of


    Original     		PDF LMH6559 SNOSA57C LMH6559 1750MHz 580V/s -52dBc 20MHz 1750MHz, SNOSA57C CLC730245 CLC730136

    z0b07

    Abstract: Z4618 z4843
    Text: SEMITRON INDUSTRIES LTD M3E » • aiaîsas DDQOISS 8 H S L C B Z0/Z4 SERIES Hermetically Sealed Package ■Voltage Regulator Diode Released to BS 9305-F078 3 - 200 Volts ■Voltage Range 3VO to 400 Volts 1 Watt Steady State ■400 Watt Peak Power APPLICATIONS


    OCR Scan     		PDF 9305-F078 9305-F-078 DO-35 DO-41 DO-15 DO-201AD z0b07 Z4618 z4843

    SMPN7316

    Abstract: DIODE Z0 031
    Text: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance


    OCR Scan     		PDF OT-23 SMPN7316 DIODE Z0 031

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


    OCR Scan     		PDF

    1B60

    Abstract: AT31011
    Text: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA


    OCR Scan     		PDF AT-31011 AT-31033 5965-1401E 5965-8919E 4447SA4 0G17bDl 1B60 AT31011

    sot 86 marking CODE e3

    Abstract: No abstract text available
    Text: f ï ^ l HEW LETT WFnÆP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Perform ance Bipolar T ransistor Optim ized for Low Current, Low Voltage O peration • 900 MHz Performance:


    OCR Scan     		PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 OT-000 sot 86 marking CODE e3

    AT415

    Abstract: No abstract text available
    Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga


    OCR Scan     		PDF AT-41511, T-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT415

    AT-30533

    Abstract: No abstract text available
    Text: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 OT-23,

    Untitled

    Abstract: No abstract text available
    Text: W m H EW L E T T rnüCM PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-31011 AT-31033 AT-31033: AT-31033 OT-23, OT-143.

    Transistor BFR

    Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
    Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code


    OCR Scan     		PDF OT-23 Transistor BFR Transistor BFR 191 Transistor BFR 39 BFR 67

    Field-Effect Transistors

    Abstract: Transistors General smd sot343
    Text: Product specification Philips Semiconductors Small-signal Field-effect Transistors General section S-PARAMETER DEFINITIONS Measurement The S-parameter symbols in this section are based on IEC publication 747-7. The return losses are measured with a network analyzer


    OCR Scan     		PDF