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    Z0 150 81 Search Results

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    Z0 150 81 Price and Stock

    APEM Inc 3150RZ0281

    Joysticks 3000 Series Joystick / with Lighted LED Ball / 50% gain
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    Mouser Electronics 3150RZ0281
    • 1 $651.54
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    Z0 150 81 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 [email protected] ∙ www.petermann-technik.com DIFFERATIAL LOW POWER SPREAD SPECTRUM OSCILLATOR 1.0—220.0 MHz SERIES „DLPSSO“


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    PDF D-86899

    Untitled

    Abstract: No abstract text available
    Text: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 [email protected] ∙ www.petermann-technik.com HIGH PRECISION DIFFERENTIAL LP TC & VCTCXO SERIES „HFDTCVCTO“ HIGH PRECISION 220—625 MHz


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    PDF D-86899

    DIFFERENTIAL LOW POWER TC & VCTCXO MHz

    Abstract: No abstract text available
    Text: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 [email protected] ∙ www.petermann-technik.com DIFFERENTIAL LOW POWER TC & VCTCXO MHz SERIES „DTCVCTO“ 1.0—220 MHz FEATURES


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    PDF D-86899 DIFFERENTIAL LOW POWER TC & VCTCXO MHz

    HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR

    Abstract: No abstract text available
    Text: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 [email protected] ∙ www.petermann-technik.com HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR SERIES „DLPO-4“ 220—625MHz FEATURES


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    PDF D-86899 625MHz HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR

    HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR

    Abstract: No abstract text available
    Text: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 [email protected] ∙ www.petermann-technik.com HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR SERIES „DLPO-3“ 1.0—220 MHz FEATURES


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    PDF D-86899 HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR

    274 231

    Abstract: 955 539 ic
    Text: BFP 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143


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    PDF D-74025 274 231 955 539 ic

    transmission lines Twisted Pair spice model

    Abstract: MMBD701 Twisted Pair split termination 100EP MBD301 MBD701 MC10EP16 MMBD301 diode z01
    Text: AND8020/D Termination of ECL Devices with EF Emitter Follower OUTPUT Structure Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction − DC Termination Analysis


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    PDF AND8020/D transmission lines Twisted Pair spice model MMBD701 Twisted Pair split termination 100EP MBD301 MBD701 MC10EP16 MMBD301 diode z01

    rsn 3305

    Abstract: transmission lines Twisted Pair spice model MC10EP16 100EP 0.001 MF CAPACITOR AND8020
    Text: AND8020/D Termination of ECL Logic Devices Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction – DC Termination Analysis Section 3. Thevenin Equivalent/Parallel Termination


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    PDF AND8020/D r14525 rsn 3305 transmission lines Twisted Pair spice model MC10EP16 100EP 0.001 MF CAPACITOR AND8020

    temic 0675

    Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
    Text: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23


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    PDF D-74025 temic 0675 MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244

    BFQ71

    Abstract: Q62702-F775 bfq 96
    Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.


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    PDF Q62702-F775 BFQ71 Q62702-F775 bfq 96

    VC-210FA

    Abstract: HTG2121 tokin noise filter MR-2043 MA-2053 LF-315 GL-2060H1 335k 400v tokin noise filter MR-2021 mr-2043 LF-305
    Text: Noise Filters Open Frame ME Series for Harmonic Distortion .274 Casing Type Metal box LF Series Small Current Type .275 LF Series Small Current Type with Screw


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    PDF LF-3000 SeriesL-2060G R50014166 R50013357 R50013349 R50013360 R95113 R50013627 GL-2030H1 GT-215J VC-210FA HTG2121 tokin noise filter MR-2043 MA-2053 LF-315 GL-2060H1 335k 400v tokin noise filter MR-2021 mr-2043 LF-305

    transmission lines Twisted Pair spice model

    Abstract: Twisted Pair split termination MC10EP16 0.001 MF CAPACITOR
    Text: AND8020/D Termination of ECL Logic Devices with EF Emitter Follower OUTPUT Structure http://onsemi.com Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction − DC Termination Analysis


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    PDF AND8020/D transmission lines Twisted Pair spice model Twisted Pair split termination MC10EP16 0.001 MF CAPACITOR

    RSN 3305

    Abstract: transmission lines Twisted Pair spice model MMBD701 100EP MBD301 IC CD 4030 pin configuration reflection cofficient free circuit diagram of motherboard 945 ac 625 r 381 substitution AND8020
    Text: AND8020/D Termination of ECL Logic Devices Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction – DC Termination Analysis Section 3. Thevenin Equivalent/Parallel


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    PDF AND8020/D r14525 RSN 3305 transmission lines Twisted Pair spice model MMBD701 100EP MBD301 IC CD 4030 pin configuration reflection cofficient free circuit diagram of motherboard 945 ac 625 r 381 substitution AND8020

    z0 150 81

    Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
    Text: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F774 z0 150 81 transistor s11 s12 s21 s22 Q62702-F774 bfq 85

    Transistor BFR 97

    Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
    Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


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    PDF Q62702-F1051 OT-23 Transistor BFR 97 Transistor BFR 37 Q62702-F1051 Transistor BFR 98

    BFQ 85

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23
    Text: NPN Silicon RF Transistor BFQ 29P ● For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ● CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


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    PDF Q62702-F659 OT-23 BFQ 85 RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23

    Transistor BFR

    Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F1086 OT-23 Transistor BFR Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93

    BFQ72

    Abstract: Q62702-F776 s parameters transistor ac 151
    Text: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F776 BFQ72 Q62702-F776 s parameters transistor ac 151

    ac 0624 transistor 17-33

    Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
    Text: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F1282 OT-143 ac 0624 transistor 17-33 transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060

    Transistor BFR 93

    Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
    Text: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF Q62702-F1086 OT-23 Transistor BFR 93 Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35

    Q62702-F788

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.


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    PDF Q62702-F788 Q62702-F788

    xgold

    Abstract: No abstract text available
    Text: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany


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    PDF IEC61000-4-2 xgold

    st ae gp 446

    Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
    Text: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!


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    PDF OT-23 st ae gp 446 AE GP 532 AE GP 531 ae gp 447 592/diode gp 421

    MEA8020

    Abstract: ACB1608 EPC17 BOBBIN ZCYS51R5-M3PA TCXO 9.9 MHZ CST063 QVC10 NLU160805 tdk Isolators ACL2520
    Text: SM Components at a Glance Product name Type or Series Part No. Multilayer Ceramic Chip Capacitors C1005 [EIA CC0402] W T 1 0.5 0.55 max. Class I 0.5 to 330pF Class II 220 to 100000pF 1.6 0.8 0.9 max. Class I 0.5 to 1000pF Class II 220pF to 1jiF 2 1.25 1.45 max.


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    PDF C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] MEA8020 ACB1608 EPC17 BOBBIN ZCYS51R5-M3PA TCXO 9.9 MHZ CST063 QVC10 NLU160805 tdk Isolators ACL2520