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    Z-44 MOSFET Search Results

    Z-44 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    Z-44 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    44P15T

    Abstract: No abstract text available
    Text: IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V VDGR


    Original     		PDF O-263 O-220AB IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T O-247 44P15T

    transistor power rating 5w

    Abstract: DU2805S transistor Pout 5W B62152A
    Text: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices


    Original     		PDF DU2805S 918OpF B62152-AOOOl-X001 transistor power rating 5w DU2805S transistor Pout 5W B62152A

    IXTA44P15T

    Abstract: No abstract text available
    Text: IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V


    Original     		PDF IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T O-263 O-220AB IXTA44P15T IXTQ44P15T

    44N80

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS264TM 44N80 728B1 123B1 728B1 065B1 44N80

    25 ohm semirigid

    Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
    Text: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l


    Original     		PDF UF2840G 1000pF t-500pF 25 ohm semirigid capacitor 50uf UF2840G resistor 1.2k capacitor J 400

    44P15T

    Abstract: IXTP44P15T ixta44p15t IXTA44 IXTP44 TO-3P weight
    Text: Preliminary Technical Information TrenchPTM Power MOSFET IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T P-Channel Enhancement Mode Avalanche Rated - 150V - 44A Ω 65mΩ TO-3P IXTQ S (TAB) G D S G (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C - 150


    Original     		PDF IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T O-220 O-263 IXTA44P15T IXTQ44P15T 44P15T IXTP44P15T IXTA44 IXTP44 TO-3P weight

    transistor v2w

    Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
    Text: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor


    Original     		PDF LF281 rt-l-970' transistor v2w transistor C 2240 TRANSISTOR 500 PL031 TT 2240

    equivalent transistor s2000

    Abstract: transistor s2000 DU28200M DS20A DU28200
    Text: an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz DU28200M v2.00 Features P&-4 I N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices


    Original     		PDF DU28200M equivalent transistor s2000 transistor s2000 DU28200M DS20A DU28200

    UF2815OJ

    Abstract: No abstract text available
    Text: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C


    Original     		PDF UF2815OJ -65to UF2815OJ

    Transistor Equivalent list

    Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
    Text: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    Original     		PDF DU2860U 9-18OpF Transistor Equivalent list transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860

    20 amp MOSFET transistor

    Abstract: MOSFET POWER TRANSISTOR DU2880V
    Text: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C


    Original     		PDF DU2880V 5-j14 20 amp MOSFET transistor MOSFET POWER TRANSISTOR DU2880V

    Transistor Equivalent list

    Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation


    Original     		PDF UF2805B 68Dpf 82Opf Transistor Equivalent list "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos

    Transistor Equivalent list

    Abstract: SEMCO 20 amp MOSFET transistor DU1260T
    Text: .-I -=c z an AMP company = RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz DU1260T v2.00 Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    Original     		PDF DU1260T DU12BOT Transistor Equivalent list SEMCO 20 amp MOSFET transistor DU1260T

    3F TRANSISTOR

    Abstract: F2801
    Text: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration


    Original     		PDF UF2801 F2801 3F TRANSISTOR

    UF28156

    Abstract: UF2815B L5 mosfet
    Text: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation


    Original     		PDF UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet

    DU2860T

    Abstract: 22 pf trimmer capacitor
    Text: =zs.-E-= -=- * .-= - E an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860T v2.00 Features -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    Original     		PDF DU2860T 9-180pF DU2860T 22 pf trimmer capacitor

    balun transformer 75 ohm

    Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
    Text: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS


    Original     		PDF UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH

    IXTP180N085T

    Abstract: IXTA180N085T
    Text: TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 85 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 85 V VGSM Transient


    Original     		PDF IXTA180N085T IXTP180N085T O-263 180N085T 03-04-09-D IXTP180N085T IXTA180N085T

    equivalent transistor c 243

    Abstract: lf2805a 1000 MHz transistor 5W
    Text: A fikQ m w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 500 -1000 MHz LF2805A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor


    OCR Scan     		PDF LF2805A equivalent transistor c 243 lf2805a 1000 MHz transistor 5W

    kd 506 transistor

    Abstract: transistor M 839 DU2880U
    Text: A tfN m an AMP com pany RF MOSFET Power Transistor, 80W, 28V 2 - 1 7 5 MHz DU2880U Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices


    OCR Scan     		PDF DU2880U kd 506 transistor transistor M 839 DU2880U

    transistor t2a

    Abstract: U 318 m t2a transistor UF2820P
    Text: M an A M P com pany RF MOSFET Power Transistor, 20W, 28V 100 -500 MHz UF2820P V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure I.ower Capacitances for Broadband O peration Com m on Source C onfiguration Lower Noise Floor


    OCR Scan     		PDF UF2820P transistor t2a U 318 m t2a transistor UF2820P

    Untitled

    Abstract: No abstract text available
    Text: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF DU2820S 5-80pF 3-30pF DU2S20S

    DU1230S

    Abstract: arco TRIMMER capacitor SEMCO
    Text: A te m m a n A M P com pany RF MOSFET Power Transistor, 30W, 12V 2 -175 MHz DU1230S V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration High Saturated O utput Power Lower Noise Figure Than Bipolar Devices


    OCR Scan     		PDF DU1230S 5-80pF 4-40pF 1000pF DU1230S arco TRIMMER capacitor SEMCO

    capacitor 50uf

    Abstract: balun 50 ohm DU28200M transistor c s z 44 v
    Text: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices


    OCR Scan     		PDF DU28200M 13PARTS 500pF 2700OHM DU28200M 1000pF capacitor 50uf balun 50 ohm transistor c s z 44 v