marking code YK
Abstract: transistor yk yk diode
Text: SDB310WS SCHOTTKY BARRIER DIODE PINNING Features • Low power rectified • Silicon epitaxial type • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 YK Top View Marking Code: "YK" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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SDB310WS
OD-323
OD-323
marking code YK
transistor yk
yk diode
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MOSFET B20 N03
Abstract: CXD 9843 A09 N03 MOSFET MOSFET B20 p03 DL1416 FAN A31 H07 schottky k04 apple A5 processor APPLE A7 343S0181
Text: Yellowknife Engineering Specification Version 1.0 YK AN ENGINEERING SPECIFICATION FOR Yellowknife A PowerPCTM Reference Platform Revision 1.0 October 30, 1996 Contact Information: RISC Hotline Motorola RISC Applications 6501 Wm. Cannon Dr. West MD/OE42 Austin, TX 78735
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MD/OE42
devicesU17.
devicesU21,
LVT16274
MOSFET B20 N03
CXD 9843
A09 N03 MOSFET
MOSFET B20 p03
DL1416
FAN A31 H07
schottky k04
apple A5 processor
APPLE A7
343S0181
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mosfet protect
Abstract: IRF53 design ideas World transistors databook IRF530S LTC4251 LTC4252 LTC4252-1 LTC4253 SMAT70A
Text: DESIGN FEATURES –48V Hot Swap Controller Offers Comprehensive Protection for by YK Sim and Mitchell Lee Telecom Systems Introduction High performance, high reliability telecom systems employ distributed power modules to generate low voltage, high current supplies from a –48V
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LTC4251
LTC4251
OT-23
LTC4252
10-pin
LTC4253
16-pin
mosfet protect
IRF53
design ideas
World transistors databook
IRF530S
LTC4252
LTC4252-1
SMAT70A
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Pch MOSFET RZE002P02 Structure Silicon P-channel MOSFET Dimensions Unit : mm EMT3 0.7 1.6 Features 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive. 0.55 0.3 (1) 0.2 0.2 0.5 0.5 1.0 Applications Switching (1)Source (2)Gate Abbreviated symbol : YK
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RZE002P02
R0039A
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Untitled
Abstract: No abstract text available
Text: DL969= SHQT QECSIFIEQ RPECIALIRSR DL99:9 SECHNICAL RPECIFICASIONR OF HIGH RPEED RVISCHING DIODER UOLSAGE QANGE 2 :5 kg 655 Ugdkj CTQQENS 2 536: kg 537 Aeh]i] FEASTQER / / / / / Rada[gf ]hakYoaYd hdYfYi \ag\]j Lgn hgn]i dgjj1 `a_` ]^^a[a]f[p Lgn d]YcY_] Lgn ^ginYi\ mgdkY_]
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DL969=
655gCrSb
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DL96
Abstract: DL4148 S 657 A
Text: DL969= DC COMPONENTS CO., LTD. Q SHQT QECSIFIEQ RPECIALIRSR DL99:9 SECHNICAL RPECIFICASIONR OF HIGH RPEED RVISCHING DIODER UOLSAGE QANGE 2 :5 kg 655 Ugdkj CTQQENS 2 536: kg 537 Aeh]i] FEASTQER / / / / / Rada[gf ]hakYoaYd hdYfYi \ag\]j Lgn hgn]i dgjj1 `a_` ]^^a[a]f[p
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DL969=
655gCrSb
DL96
DL4148
S 657 A
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6526
Abstract: 65eA w 6554 DL4148 DL4150 DL4151 DL4448 DL4454 SB655 gk 735
Text: DL969= DC COMPONENTS CO., LTD. Q SHQT QECSIFIEQ RPECIALIRSR DL99:9 SECHNICAL RPECIFICASIONR OF HIGH RPEED RVISCHING DIODER UOLSAGE QANGE 2 :5 kg 655 Ugdkj CTQQENS 2 536: kg 537 Aeh]i] FEASTQER / / / / / Rada[gf ]hakYoaYd hdYfYi \ag\]j Lgn hgn]i dgjj1 `a_` ]^^a[a]f[p
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DL969=
655gCrSb
6526
65eA
w 6554
DL4148
DL4150
DL4151
DL4448
DL4454
SB655
gk 735
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LN260RPX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 70
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2002/95/EC)
LN260RPX
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LNG460YKX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150
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LNG460YKX
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LN260RPX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 70 mW Forward current IF 25 mA Pulse forward current * IFP 150 mA
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LN260RPX
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNG460YKX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD
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2002/95/EC)
LNG460YKX
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes LN360GPX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA
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LN360GPX
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LN360GPX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90
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2002/95/EC)
LN360GPX
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QS33X257
Abstract: 74F257
Text: QS33X257 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 24:12 Mux/Demux QS33X257 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional signal flow • 24:12 Mux/Demux switches connect
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QS33X257
48-pin
QS33X257
74F257,
74FCT257,
74ALS/
AS/LS257
MDSL-00112-02
74F257
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D 92 M - 02 DIODE
Abstract: c 92 M - 02 DIODE ym oca
Text: 5 /a s /h = * P - A 'U T ' Ç 'C X — YSchottky Barrier Diode OUTLINE DIMENSIONS DE5SC6M Package I E Ky9 VW-U><7J\°-yK 0 # # /1 Standard soldering pad 60V 5A * « : ±0.1 Tolerance: ±0.1 D ® •S M D • P rrsm T’y ^'5 5.2 ±0-2 i ffill •im-xmzamm
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65-as
50HziEilO
J515-5
D 92 M - 02 DIODE
c 92 M - 02 DIODE
ym oca
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: U n y n - n z ÿ ' f * - K U tip e Super P ast R ecovery Diode t - k Axial Diode mB-ïffèm S2L20U OUTLINE DIMENSIONS Case: 1.0^ 1 i 4.4 ' 200V 1.5A ¥ YK U < j) ° - •trr3 5 n s T ) : CalhiHlc (2 ) : Anodo t tfc N J W O •¿■tsmmmMw M arking •S R S S
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S2L20U
SHINDENGEN DIODE
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D3FS4A
Abstract: diode code ae
Text: aH S 7V H 3. 5^3% > h ^ r — /X U 7 7 Schottky Barrier Diode Surface Mounting Device Tl"— K O U T L IN E D IM E N S IO N S Case ! 2 F Type D3FS4A U n it ’ mm ' C a th o d e m ark 40V 2.6A « &o u . CO & « 2 .5 6.1 - T y p e No. D a te code N'-yK 73##/
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MAX236CEG
Abstract: MAX244 uc 232A
Text: 19-4323; Rev 3; 5/94 yk lX X IV M + 5 V -P o w e re d , M u lti-C h a n n e l R S -2 3 2 D riv e rs /R e c e iv e rs These parts are particulary useful in battery-powered systems since their low-power shutdown mode reduces pow er d issipa tion to less than 5nW. The MAX225,
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2V--MAX231
MAX239)
MAX223/MAX242)
EIA/TIA-232E
MAX243)
MAX220-MAX249
MAX220-MAX249
MAX231,
MAX232
MAX236CEG
MAX244
uc 232A
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Untitled
Abstract: No abstract text available
Text: - •_ yK UNITRODE CORP — TE 9347963 U N ITR O D E CO RP DE~ ^347^^3 GD10ÛT3 0 92D 10893 D P O W E R M O S F E T T R A N S IS T O R S 50 Volt, 0.05 Ohm N-Channel ^ nzso T- T f l - l l FEATURES D E S C R IP T IO N • • • • • • These low voltage power MOSFETS have been designed for optimum performance in low
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RKN8
Abstract: ln5340a LN5260A LN5430a LN543GA RKS 04 ln5340am0 LN-5260A LN516RA rk 88
Text: Visible Light Emitting Diodes • Numerical Display Devices One Color Digit (Size) +1 Display (0.3 inch) +1 Display (0.4 inch) Appearance LN504R LN504G LN504Y LN503R LN503G LN503Y - - Digit (Size) 1 Digit (0.4 inch) 1 Digit (0.6 inch) | f i LN513RA/RK
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LN513RAS/RKS
LN513GAS/GKS
LN513YAS/YKS
LN5130AS/0KS
LN503R
LN503G
LN503Y
LN504R
LN504G
LN504Y
RKN8
ln5340a
LN5260A
LN5430a
LN543GA
RKS 04
ln5340am0
LN-5260A
LN516RA
rk 88
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RKN8
Abstract: LN5260A ln5340a ln5340am0 LN543RAN8 LN514RA/RK
Text: Visible Light Emitting Diodes •Numerical Display Devices Digit Size +1 Display (0.3 inch)!+1 Display (0.4 inch) +1 Display (0.6 inch) 1 Digit (0.3 inch) Appearance S LN503R LN503G LN503Y Red Em itted Green color Amber LN504R LN504G LN504Y - Orange Dig* (Si»)
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LN503R
LN503G
LN503Y
LN504R
LN504G
LN504Y
LN506RA/RK
LN506GA/GK
LN506YA/YK
LN506OA/OK
RKN8
LN5260A
ln5340a
ln5340am0
LN543RAN8
LN514RA/RK
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH2115 GaAs ENERGY CONVERTER Package Dimensions in mm FEATURES • • • • 8 Diodes Connected in Serle* T 0 18 Package Floating Output Signal FC Connector for use with 200 Fiber, NA=0.37 Characteristics TA=25“C Parameter Radiant Input Power
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SFH2115
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SS125
Abstract: No abstract text available
Text: SEM ICONDUCTOR TE CHNICAL DATA KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=12.5 Typ. -1 1 • Low Series Resistance : rs=0.6£2(Typ.) • Excellent C-V Characteristics, and Small Tracking Error.
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C2V/C25V
KDV262E
470MHz
Ta-25
SS125
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ie3e
Abstract: No abstract text available
Text: n - n x V 'C X - Y - H£I Super Fast Recovery Diode Single Diode Surface Mount OUTLINE DIMENSIONS D2FL40 ' Cathode mark 400V 1.3A I>r • /J v ik S M D • f iy - r x / 9 /, _ i wo LL ^ i l l CM •trr5 0 n s m m •S R S ÎÜ •D C /D C Unit • mm Package I 2F
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D2FL40
J515-5
ie3e
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