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    tl4311

    Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
    Text: SG388CH/D 2000  4   2         SG388CH/D 2000  3   2  SCILLC,2000  © 1999 “” http://onsemi.com.cn         SCI LLC      ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O


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    PDF SG388CH/D r14525 SG388CH/D tl4311 SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150

    2SK1693

    Abstract: K1693 F8V50
    Text: X VXv y / \° 7 - M O S F E T VX S eries Pow er M OSFET imMfem 2SK1693 OUTLINE DIMENSIONS [F8V50] 500V 8A • A JiBM Ciss W • A C 10 0 V * A * 7 , ^ "jJ-yJW M •t.'C 'y^y^stvsEmm •-r y> x.—s> • Æ fê Ü RATINGS Absolute Maximum Ratings s m t m


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    PDF 2SK1693 F8V50] 100V3R O-220 -K1693 2SK1693 K1693 F8V50

    Untitled

    Abstract: No abstract text available
    Text: CENTRONIC LTD 4SE D • □□□□042 1 ■ C E N T TECHNICAL DATA SHEET Centronic Silicon Photodetectors Opto Hybrid Series OSI15-100K/25K The OSI 15-100K/25K range of detectors utilise a 15mm2active area chip mounted together with an amplifier chip in a T08 package.


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    PDF OSI15-100K/25K 15-100K/25K 15mm2active m51B7 0D00043

    CODE HRY

    Abstract: No abstract text available
    Text: S . ‘ ON 5-R B J& » REV. £6 1 6£0P S m ss ñ # D ESC RIPTIO N DCN NO. DATE m E DR. s m APPD. CHK. & U APPD. 0NIMVOa 4#fflia P. C. B. H O L E P A T T E R N S ( R E F. / Í Ñ - ; U n ^ — $/ a > ( (CONTACT ± 0 . 05 N- O. 8 NO. 1 4 0 ;$ , : ) ) 140, 1 8 0 )


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    Untitled

    Abstract: No abstract text available
    Text: IL 'ON #•.ñ B DATE JK & REV. 00Z6É0PS DCN w. w. ñ S DESCRIPTION NO. M m S Uà CHK. DR. s m APPD. & M APPD. 9N IMVHQ P. C. B. THROUGH HOLE L O C A T I ON ( RE F. ) ±0. 4 (##) (CONTACT 1 4 0 , NO. : 140, 180) (CONTACT 1 8 0 S NO. 16 0S, : 150,200)


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    PDF SJ039200

    Untitled

    Abstract: No abstract text available
    Text: Temic S254PN Semiconductors Silicon NPN Phototransistor Description S 2 5 4 P N is a h ig h sp ee d an d v ery h ig h se n sitiv e silic o n N P N e p ita x ia l p la n a r p h o to tra n s is to r in a sta n d a rd T O - 18 h e rm e tic a lly se a le d m etal case.


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    PDF S254PN 15-Jul-96 15-Ju

    TA 7136 p

    Abstract: MC3485 MMD7000 ta 7136 MC3481 MC3486
    Text: MOTOROLA SC TELECOM bSE D b3b?ES3 GD ä b MS 3 MOTOROLA ÛG5 « M O T S MC3481 MC3485 ISEMICONDUCTOR TECHNICAL DATA IBM 3 6 0 / 3 7 0 Q UAD LINE DRIVER QUAD SINGLE-ENDED LINE DRIVER SILICON MONOLITHIC The M C 3 4 8 1 a n d M C 3 4 8 5 are q u a d s in g le -e n d e d lin e d riv e rs


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    PDF MC3481 MC3485 GA22-6974-3) MC3481 MC3485 b3b72S3 MC3481, MC3486 MMD7000 TA 7136 p ta 7136

    TTL 7400

    Abstract: ITT 7400 55199 IC 7400 nand gate N7421N ttl ttl7400 7400 signetics TTL 7400 signetics ITT301 pin diagram 7400 series
    Text: S ig n e tics Integrated Circuits T T l. G E N E R A L D E S C R IP T IO N M A X IM U M R A T IN G S Stan dard " G o l d D o p e d " T T L . is the in d u s try 's longest selling d ig ita l log ic f a m ily still in high vo lu m e p rod uction. S ig n e tics m anufacture th e ‘¡o llo w in g ranges.


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    PDF BS9400 N7400N 55181D N7401N 55182B N7402N 55184R N7403N TTL 7400 ITT 7400 55199 IC 7400 nand gate N7421N ttl ttl7400 7400 signetics TTL 7400 signetics ITT301 pin diagram 7400 series

    D 8243 HC

    Abstract: SO3A 6164 ram rb1-e N74S00 ITT301 N74S04 B177 55604A CD 5888
    Text: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith


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    PDF N74S00N 55376D N74S02N 55377B N74S03N 55378X N74S04N 55379R N74S05N 5380A D 8243 HC SO3A 6164 ram rb1-e N74S00 ITT301 N74S04 B177 55604A CD 5888

    diode LT 42 PR 3002

    Abstract: 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141
    Text: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith


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    PDF N74S00N 55376D N74S02N 55377B N74S03N 55378X N74S04N 55379R N74S05N 5380A diode LT 42 PR 3002 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141

    LTTS e3

    Abstract: COM16 HJU6425F NJU6408B NJU6420B NJU6425 LT 5206 b77w LT 5219
    Text: NJU6425 \ m L C D m H V V K - y ^ h u - = 7 h urn, m 1J y ? * Y = 7 'i'< • ìi- NJU6425 1Ì, m IOtfi3ÍT<7 K y l- v h 'J - y ? : * L C D * I ^ -y ^ T i E » T ■?>LCD □ > I- □ — 7 K i'f / < T ', ;jO l/x — y ? " ^ 7 , ■i >7* l- 7 / ’ y a > JWhI5,


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    PDF NJU6425 NJU6425ti, NJU6408B, NJU6420B NJU6425OT NJU6425 LTTS e3 COM16 HJU6425F NJU6408B NJU6420B LT 5206 b77w LT 5219

    equivalent for transistor tt 2222

    Abstract: wn 537 a transistor wn 537 transistor 2N6669 2N6690 2N6674 2N6675 2N6689 D105 ic SL 1626
    Text: M I l - S - l 9 5 0 0 /5 3 7 U S A F ?.9. O c t o b e r I9 60 M ILITA R Y S P EC IFIC A T IO N SEM IC ONDUCTOR D E V I C E . T R A N S I S T O R , N P N , S I L I C O N , POWER T Y P E S 2 N 6 6 7 4 , 2 N 6 6 7 5 , 2 N 6 6 8 9 , AND ZN6690 J A N , J A N T X , AND J A N T X V


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    PDF MIL-S-19500/537 2N6674, 2N6675, 2N6689, 2N6690 MIL-S-19500. ZH6674, N6675 T0-61) equivalent for transistor tt 2222 wn 537 a transistor wn 537 transistor 2N6669 2N6674 2N6675 2N6689 D105 ic SL 1626

    BY236

    Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
    Text: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )


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