YAGEO CHIP RESISTORS Mounting
Abstract: Yageo RC1210 rc YAGEO CHIP RESISTORS YAGEO CHIP RESISTORS Mounting RC0603
Text: Data Sheet Thick Film Chip Resistor RC series 1.5%/1%/5% 0201/0402/0603/0805 1206/2010/2512 Yageo Corporation 3F, 233-1, Pao Chiao Rd., Hsin Tien, Taipei, Taiwan t:886.2.2917.7555 f:886.2.2917.4286 www.yageo.com.tw YAGEO CORPORATION SMD RESISTORS Thick Film Chip Resistors
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RS481
RC0201
RC0402RC2512
-STD-202F,
MIL-STD-202F,
JIS-C-5202,
YAGEO CHIP RESISTORS Mounting
Yageo RC1210
rc YAGEO CHIP RESISTORS
YAGEO CHIP RESISTORS Mounting RC0603
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YAGEO RC2512
Abstract: Yageo RC1210 YAGEO RC0603 Yageo RC1206 resistor SMD 1005 YAGEO CHIP RESISTORS Mounting RC0603
Text: YAGEO CORPORATION SMD RESISTORS Thick Film Chip Resistors RC Series FEATURES Extremely Thin and Light Highly Reliable Multilayer Electrode Construction Compatible with all Soldering Process Highly Stable in Auto-Placement Surface Mounting Applications Barrier Layer End Termination
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RS481
-202F,
MIL-STD-202F,
JIS-C-5202,
YAGEO RC2512
Yageo RC1210
YAGEO RC0603
Yageo RC1206
resistor SMD 1005
YAGEO CHIP RESISTORS Mounting RC0603
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Yageo RC1210
Abstract: RC0402 0,063
Text: YAGEO CORPORATION SMD RESISTORS Thick Film Chip Resistors RC Series FEATURES Extremely Thin and Light Highly Reliable Multilayer Electrode Construction Compatible with all Soldering Process Highly Stable in Auto-Placement Surface Mounting Applications Barrier Layer End Termination
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RS481
13inch
10ppm/
15ppm/
25ppm/
50ppm/
100ppm/
200ppm/
250ppm/
Yageo RC1210
RC0402 0,063
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EIA-96 YAGEO
Abstract: Yageo RC1206 RC0402 yageo YAGEO RC 0805 DSA00924376.txt RC yageo YAGEO CHIP RESISTORS MARKING RC0402 1206RC YAGEO RC2512 Yageo RC1210
Text: Approval Sheet Thick Film Chip Resistor RC series ±1% & ±5% YAGEO CORPORATION THICK FILM FACTORY Factory: No.11, Min Chuan Rd., Ta Sheh, Kaohsiung, Taiwan, R.O.C. Tel: 886-7-351-4117 Fax: 886-7-351-2075 Headquarters: 3F, No.233-1, Pao Chiao Rd., Shin Tien, Taipei, Taiwan,
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RC0201
RC0402
RC0603
RC0805
RC1206
RC1210
RC2010
RC2512
178mm)
EIA-96 YAGEO
Yageo RC1206
RC0402 yageo
YAGEO RC 0805
DSA00924376.txt
RC yageo
YAGEO CHIP RESISTORS MARKING RC0402
1206RC
YAGEO RC2512
Yageo RC1210
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Rogers RO4350B
Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
Rogers RO4350B
RO4350B ROGERS
GRM155R71E103KA01
25C2625
GRM1555C1H181JZ01
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RO4350B
Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
Text: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
RO4350B
Rogers RO4350B microstrip
RC0402FR-07-910RL
YAGEO CHIP Capacitors MARKING
GRM1555C1H221JZ01
ERJ2GE0R00X
marking us capacitor pf l1
GRM1555C1H560JZ01
RC0402JR yageo
GRM1555C1H181JZ01
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Untitled
Abstract: No abstract text available
Text: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
400--scale
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Untitled
Abstract: No abstract text available
Text: DEMO MANUAL DC1925A LTC2378-20/LTC2377-20/LTC2376-20 20-Bit,1Msps/500ksps/250ksps, Low Power, SAR ADCs with 104dB SNR DESCRIPTION The LTC 2378-20, LTC2377-20 and LTC2376-20 are 20‑bit, low power, low noise SAR ADCs with serial outputs that operate from a single 2.5V supply. The following text
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DC1925A
LTC2378-20/LTC2377-20/LTC2376-20
20-Bit
1Msps/500ksps/250ksps,
104dB
LTC2377-20
LTC2376-20
LTC2378-20
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RC0402 yageo
Abstract: YAGEO CHIP RESISTORS MARKING RC0402 RC32 RESISTOR
Text: DATA SHEET GENERAL PURPOSE CHIP RESISTORS RC0402 5%, 1% Product specification – Jan 05, 2011 V.6 Supersedes Date of Mar. 06, 2003 RoHS compliant & Halogen Free Product specification Chip Resistor Surface Mount RC SCOPE ORDERING INFORMATION - GLOBAL PART NUMBER & 12NC
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RC0402
RC0402
RC22H)
9C06031A10R0FKHFT
RC0402 yageo
YAGEO CHIP RESISTORS MARKING RC0402
RC32 RESISTOR
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atmel 93C46
Abstract: SM0402 RC0402FR-0710KL 93c46 atmel atmega32l SSQ-105-02-T-D-RA PRPN051PAEN 93c46 pc MI0805K400R-00 RC0805JR-070RL
Text: Features Description The USB to SMBusTM Interface board allows communication between a Zilker Labs Digital-DC evaluation board and a PC. This interface board has been designed to bridge PMBus commands from a PC application program to the SMBus. The PMBus command
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ZLUSBREF01DSR1
atmel 93C46
SM0402
RC0402FR-0710KL
93c46 atmel
atmega32l
SSQ-105-02-T-D-RA
PRPN051PAEN
93c46 pc
MI0805K400R-00
RC0805JR-070RL
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Untitled
Abstract: No abstract text available
Text: DEMO MANUAL DC2135A LTC2378-20 2ppm Linearity, DC Accurate Driver Description Demonstration circuit 2135A shows a simple DC accurate ADC driver circuit that converts a ±10V single-ended input signal into a fully differential signal capable of driving the
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DC2135A
LTC2378-20
LTC2378-20
20-bit
104dB
DC21saction
dc2135af
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GRM1555C1H101JA01
Abstract: LL1608-FH22N0S GRM155R61A105KE15 RC0402JR-07100RL RC0402JR-071K60L FR408
Text: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and
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MMA25312B
MMA25312BT1
MMA25312B
GRM1555C1H101JA01
LL1608-FH22N0S
GRM155R61A105KE15
RC0402JR-07100RL
RC0402JR-071K60L
FR408
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMA25312B Rev. 0, 9/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA25312BT1 High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and
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MMA25312B
MMA25312BT1
MMA25312B
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GRM1555C1H101JA01D
Abstract: GRM155R71E103KA01D is680 2x28A RC0402FR-07100RL GRM155R71C104KA88D GRM1555C1H560JZ01D GRM155C1H560JA01D MML09211Ht1 IS680-3
Text: Freescale Semiconductor Technical Data Document Number: MML09211H Rev. 0, 7/2011 Enhancement Mode pHEMT Technology E-pHEMT MML09211HT1 Low Noise Amplifier The MML09211H is a single-stage Low Noise Amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is
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MML09211H
MML09211HT1
MML09211H
40and
GRM1555C1H101JA01D
GRM155R71E103KA01D
is680
2x28A
RC0402FR-07100RL
GRM155R71C104KA88D
GRM1555C1H560JZ01D
GRM155C1H560JA01D
MML09211Ht1
IS680-3
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RC0402FR-0710K0L
Abstract: AN1468 RC0402FR-07100KL 3-644456-2 GRM21BR60J106ME19L MCR03EZPFX49R9 SM0402 SM7343 YAGEO RC0402FR Caplugs
Text: Application Note 1468 ZL2106EVAL1Z Evaluation Board Description Specifications The ZL2106 is an innovative power conversion and management IC that combines an integrated synchronous step-down DC-DC converter with key power and fault management functions in small package,
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ZL2106EVAL1Z
ZL2106
0x4405
0x0004
95kHz
AN1468
RC0402FR-0710K0L
RC0402FR-07100KL
3-644456-2
GRM21BR60J106ME19L
MCR03EZPFX49R9
SM0402
SM7343
YAGEO RC0402FR
Caplugs
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GRM155C1H560JA01D
Abstract: No abstract text available
Text: Document Number: MML09211H Rev. 0, 7/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09211HT1 Low Noise Amplifier The MML09211H is a single-stage Low Noise Amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is
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MML09211H
MML09211HT1
MML09211H
400-r
GRM155C1H560JA01D
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GJM1555C1H180GB01
Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
GJM1555C1H180GB01
GRM1555C1H180JA01
C11 inductor
RC0402FR-07-1K2RL
RO4350B
Rogers RO4350B microstrip
phemt .s2p
25c2625
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panasonic inverter manual
Abstract: No abstract text available
Text: DEMO MANUAL DC1908A LTC2338/LTC2337/LTC2336/ LTC2328/LTC2327/LTC2326 18-Bit/16-Bit,1Msps/500ksps/250ksps True Bipolar Low Power, Single Supply ADCs DESCRIPTION The LTC 2338/LTC2337/LTC2336/LTC2328/LTC2327/ LTC2326 are true bipolar, low power, low noise ADCs
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DC1908A
LTC2338/LTC2337/LTC2336/
LTC2328/LTC2327/LTC2326
18-Bit/16-Bit
1Msps/500ksps/250ksps
2338/LTC2337/LTC2336/LTC2328/LTC2327/
LTC2326
LTC2338-18
100dB
panasonic inverter manual
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LL1608-FSL12N0S
Abstract: LL1608-FSL8N2JL RC0402JR-07331RL LL1608-FSL18N0S Coilcraft Design Tools GRM1555C1H471JA01 MMZ09312B TOKO TOKO TOKO TOKO 04023J10R0BBSTR LL1608-FSL1N2S
Text: Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 0, 11/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 - stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMZ09312B
MMZ09312BT1
MMZ09312B
LL1608-FSL12N0S
LL1608-FSL8N2JL
RC0402JR-07331RL
LL1608-FSL18N0S
Coilcraft Design Tools
GRM1555C1H471JA01
TOKO TOKO TOKO TOKO
04023J10R0BBSTR
LL1608-FSL1N2S
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 - stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMZ09312B
MMZ09312BT1
MMZ09312B
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MMZ09312B
Abstract: GRM1555C1H101JA01 AVX Manufacture Label
Text: Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMZ09312BT1 High Efficiency/Linearity Amplifier The MMZ09312B is a 2 - stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station
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MMZ09312B
24and
MMZ09312BT1
MMZ09312B
GRM1555C1H101JA01
AVX Manufacture Label
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FR408
Abstract: No abstract text available
Text: Document Number: MMZ25332B Rev. 1, 12/2012 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier
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MMZ25332B
11g/n)
MMZ25332BT1
FR408
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Untitled
Abstract: No abstract text available
Text: Document Number: MMZ25332B Rev. 2, 5/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier
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MMZ25332B
MMZ25332BT1
MMZ25332B
11g/n)
5/2014Semiconductor,
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RC0402JR-070RL
Abstract: RC0402FR-07100KL SM0402 MFR Yageo GRM21BR60J106ME19L C4170 GRM32ER61C226KE20 SSQ-105-02-T-D-RA RC0402FR AN10
Text: Description Features The ZL2105 is an innovative mixed-signal power management and conversion IC that combines an integrated step-down DC-DC converter with key power and thermal management functions in a single package. The ZL2105EV2 platform allows evaluation of the
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ZL2105
ZL2105EV2
ZL2105EV2DSR1
RC0402JR-070RL
RC0402FR-07100KL
SM0402
MFR Yageo
GRM21BR60J106ME19L
C4170
GRM32ER61C226KE20
SSQ-105-02-T-D-RA
RC0402FR
AN10
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