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    Y22 SOT23 Search Results

    Y22 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    Y22 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF747

    Abstract: MBB400 sot23-4 marking a1
    Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.


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    PDF BF747 BF747 MBB400 sot23-4 marking a1

    bf547 philips

    Abstract: BF547 B12 IC marking code marking code 604 SOT23
    Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation


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    PDF BF547 bf547 philips BF547 B12 IC marking code marking code 604 SOT23

    B12 IC marking code

    Abstract: BF547 MSB003 Y22 SOT23 transistor y21
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF


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    PDF BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21

    BF547

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF


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    PDF BF547 MSB003 BF547 MSB003

    MBB400

    Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation


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    PDF BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23

    mbb400

    Abstract: BF747 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation


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    PDF BF747 MSB003 mbb400 BF747 MSB003

    Y22 SOT23

    Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor


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    PDF PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11

    marking Y24 smd

    Abstract: Y23100 marking Y22 smd SMD Y23 marking Y24 2SA1461 Y23 smd
    Text: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product: fT=510MHz. 0.55 High speed switching: tstg=110ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


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    PDF 2SA1461 OT-23 510MHz. 110ns. Junctio00 -50mA -10mA marking Y24 smd Y23100 marking Y22 smd SMD Y23 marking Y24 2SA1461 Y23 smd

    marking Y22 smd

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High gain bandwidth product: fT=510MHz. 0.4 3 High speed switching: tstg=110ns. 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    PDF OT-23 510MHz. 110ns. -50mA -10mA marking Y22 smd

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High gain bandwidth product: fT=510MHz. 0.4 3 High speed switching: tstg=110ns. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    PDF OT-23 510MHz. 110ns. -50mA -10mA

    PMBTH10

    Abstract: MSB003 PMBTH81 MRA566
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost


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    PDF PMBTH81 PMBTH81 PMBTH10. MSB003 PMBTH10 MSB003 MRA566

    diode zener smd z5

    Abstract: y6 smd zener zener SMD W9 sot 23 smd y6 sot-23 z8 smd zener Diode zener smd z9 z14 smd zener SMD W9 bzx84c12 smd Z3 SMD sot 23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR VOLTAGE REGULATOR DIODES BZX84C3V3 - 82V SSV 3 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 2 1 Suited for Applications such as Cellular Phones, Hand Held Portables, and High Density PC Boards


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    PDF BZX84C3V3 OT-23 C-120 310505E diode zener smd z5 y6 smd zener zener SMD W9 sot 23 smd y6 sot-23 z8 smd zener Diode zener smd z9 z14 smd zener SMD W9 bzx84c12 smd Z3 SMD sot 23

    TI1225

    Abstract: GAD16 HA17 MAA8 HA21 JT47 AC18-AC19 HA20
    Text: 2 3 C639 C630 C635 0.1U 0603B 0.1U 0603B 0.1U 0603B 0.1U 0603B GND VCC3 C622 C633 C624 C632 1000P 0603B 1000P 0603B 1000P 0603B 1000P 0603B B 9,20 9,20 9,20 9,20 9,20 9,20 9,20 9,20 9,20 G_GNT# G_REQ# G_PAR G_STOP# G_TRDY# G_IRDY# G_DEVSEL# G_FRAME# G_PIPE#


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    PDF MAA10 MAA11 MAA12 MAA13 MAB10 MAB11 MAB12 MAB13 CKE00 SD411666100001 TI1225 GAD16 HA17 MAA8 HA21 JT47 AC18-AC19 HA20

    CC0402KRX7R9BB102

    Abstract: yageo R68 choke C210-C215 R118-R122 AA19 smd diode SMD capacitor aa4 aa5 C216-C221 smd diode u1j sot23-5 SMD CODE E5 c225 diode smd
    Text: S1D13771 S5U13771B00B USB Evaluation Board User Manual Document Number: X82A-G-001-01 Status: Revision 1.01 Issue Date: 2006/07/26 SEIKO EPSON CORPORATION 2006. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


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    PDF S1D13771 S5U13771B00B X82A-G-001-01 X82A-G-001-00 CC0402KRX7R9BB102 yageo R68 choke C210-C215 R118-R122 AA19 smd diode SMD capacitor aa4 aa5 C216-C221 smd diode u1j sot23-5 SMD CODE E5 c225 diode smd

    bb412

    Abstract: bb407 c 2026 y transistor
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation Low cost NPN transistor in a plastic SOT23 package. • High current gain • Good thermal stability. APPLICATIONS n 3 • It is intended for VHF and UHF TV-tuner applications


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    PDF BF747 MSB003 bb412 bb407 c 2026 y transistor

    YL2 sot23

    Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.


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    PDF BF547 bas500 YL2 sot23 bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412

    TRANSISTOR 58050

    Abstract: 58050 transistor
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN


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    PDF BF747 BF747 TRANSISTOR 58050 58050 transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbSBTBl 0025104 251 H A P X Product specification PNP 1 GHz switching transistor ^— ^ “ N AUER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN 1 The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its


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    PDF PMBTH81 PMBTH81 PMBTH10. MRA567

    y1 npn

    Abstract: 538 NPN transistor
    Text: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION


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    PDF bbS3R31 0Q2Mb37 BF547 BF547 y1 npn 538 NPN transistor

    Transistor AC 187

    Abstract: AC 187 npn transistor TO 1 187 transistor npn
    Text: • Philips Semiconductors bb53T31 0024bfll 175 HIAPX N AMER PHILIPS/DISCRETE Product specification b?E ]>' NPN 1 GHz wideband transistor BF747 PINNING FEATURES • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.


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    PDF bb53T31 0024bfll BF747 Transistor AC 187 AC 187 npn transistor TO 1 187 transistor npn

    SD306

    Abstract: SD306DE SD306CHP T555 teledyne fet 50 33g
    Text: t f i F flV N E 2⣠COM PON ENTS ö^lTbOH 0Q0b3TÛ 3 T-31-25 D SD304, SD306 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL GATE D-MOS FET ORDERING INFORMATION Sorted Chips In Waffle Pack TO-206AF TO-72 Package ShortlnaFtlrm* SD 304CHP SD 304DE SD 304DE/R


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    PDF T-31-25 O-206AF 304CHP 304DE 304DE/R SD304, SD306 306CHP 306DE 306DE/R SD306 SD306DE SD306CHP T555 teledyne fet 50 33g

    g21 Transistor

    Abstract: PMBTH10 PMBTH81
    Text: □□¿SW Philips Semiconductors ESI H A P X Product specification PNP 1 GHz switching transistor ^ ÂI1ER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN • High transition frequency. PMBTH81 t,7E ]> DESCRIPTION Code: V31 1 base DESCRIPTION 2 emitter


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    PDF bbS3T31 PMBTH81 PMBTH10. PMBTH81 MRAS67 g21 Transistor PMBTH10

    BF747

    Abstract: MBB400 DB64 transistor HJ 388
    Text: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.


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    PDF bb53-J31 00E4bà BF747 BF747 MBB400 DB64 transistor HJ 388

    aou 746

    Abstract: BE 187 TRANSISTOR 538 NPN transistor BF547 DB64 TRANSISTOR 185 846
    Text: P hilips Sem iconductors • N bfc.53^31 AMER 00241,37 Qb6 P H ILIP S /D IS C R E T E H A P X Product »Decification b?E NPN 1 GHz wideband transistor FEATURES g BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability.


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    PDF BF547 BF547 aou 746 BE 187 TRANSISTOR 538 NPN transistor DB64 TRANSISTOR 185 846