ss8050 sot-23
Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
SS8050
OT-23
SS8550
ss8050 sot-23
SS8050 sot-23 Y1
ss8550 sot-23
SS8050
Y1 SOT-23
SS8050 Y1
SS8050 equivalent
SS8050 sot-23 equivalent
ss8550
Y1 marking transistor sot23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
SS8050
OT-23
SS8550
100mA
800mA
800mA,
30MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
SS8050
OT-23
SS8550
100mA
800mA
800mA,
30MHz
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ss8050 sot-23
Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23
Text: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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OT-23
SS8050
OT-23
SS8550
800mA
800mA,
30MHz
100mA
ss8050 sot-23
SS8050 sot-23 Y1
Y1 SOT-23
SS8050 Y1
ss8050
Y1 TRANSISTOR MARKING SOT23 5
marking y1 sot-23
transistor marking y1
ss8550 sot-23
y1 sot23
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mc33263
Abstract: IR P 648 H 8 PIN IC
Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS over 100 Hz to 100 kHz, with a
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MC33263
r14525
MC33263/D
IR P 648 H 8 PIN IC
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component marking Y1 sot23
Abstract: 28R2 marking code 10 sot23 sot23 transistor marking y2 30R2 32R2 38R2 47R2 MC33263
Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS over 100 Hz to 100 kHz, with a
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MC33263
MC33263
r14525
MC33263/D
component marking Y1 sot23
28R2
marking code 10 sot23
sot23 transistor marking y2
30R2
32R2
38R2
47R2
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Untitled
Abstract: No abstract text available
Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS over 100 Hz to 100 kHz, with a
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MC33263
r14525
MC33263/D
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47R2
Abstract: 28R2 30R2 32R2 38R2 MC33263 Nippon capacitors
Text: Order this document by MC33263/D Advance Information MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of
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MC33263/D
MC33263
MC33263
47R2
28R2
30R2
32R2
38R2
Nippon capacitors
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Mark Y2 SOT
Abstract: SOT23 MARK Y2 28R2 30R2 32R2 38R2 47R2 MC33263
Text: Order this document by MC33263/D MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a SOT23–L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of
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MC33263/D
MC33263
MC33263
Mark Y2 SOT
SOT23 MARK Y2
28R2
30R2
32R2
38R2
47R2
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SS8050
Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1
Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current
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SS8050
OT-23
SS8550
100mA
800mA
800mA,
30MHz
26-Oct-2009
SS8050
2ss8050
MARKING Y1 TRANSISTOR
transistor marking y1
SS8050 sot-23 Y1
ss8050 sot-23
SS8050 Y1
ss8050 Y1 SOT-23
ss8050 equivalent
transistor y1
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Untitled
Abstract: No abstract text available
Text: BC847BFA 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 45V IC = 100mA high Collector Current PD = 435mW Power Dissipation 0.48mm package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020
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BC847BFA
DFN0806
100mA
435mW
J-STD-020
MIL-STD-202,
X2-DFN0806-3
BC857BFA
DS36019
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Untitled
Abstract: No abstract text available
Text: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V IC = -100mA high Collector Current PD = 435mW Power Dissipation 0.48mm package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020
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BC857BFA
DFN0806
-100mA
435mW
J-STD-020
BC847BFA
MIL-STD-202,
AEC-Q101
BC857FA
DS36018
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Untitled
Abstract: No abstract text available
Text: MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 40V IC = 200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile
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MMBT3904FA
DFN0806
200mA
435mW
MMBT3906FA
AEC-Q101
X2-DFN0806-3
J-STD-020
DS36016
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Untitled
Abstract: No abstract text available
Text: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V IC = -200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile
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MMBT3906FA
DFN0806
-200mA
435mW
MMBT3904FA
AEC-Q101
X2-DFN0806-3
J-STD-020
DS36017
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SS8050 sot-23 Y1
Abstract: Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050 Pb z Collector Current. IC= 1.5A) z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-23
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SS8050
SS8550.
300mW
OT-23
BL/SSSTC086
SS8050 sot-23 Y1
Y1 SOT-23
SS8050 Y1
ss8050 sot-23
SS8050
marking y1 sot-23
ss8050 equivalent
marking Y1 transistor
y1 SOT23
transistor marking y1
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Untitled
Abstract: No abstract text available
Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Power dissipation PCM : 0.3 W Collector Current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V
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SS8050
OT-23
500mA
30MHz
01-June-2005
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Untitled
Abstract: No abstract text available
Text: Transistors Transistor T SMD Type Product specification KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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KST8050
OT-23
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MMSS8050
Abstract: y1 npn gk120 800ma marking y1 sot-23 y1 marking code transistor Y1 SOT-23
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.
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MMSS8050
OT-23
625Watts
-55OC
OT-23
50mAdc,
10Vdc,
30MHz)
MMSS8050
y1 npn
gk120
800ma
marking y1 sot-23
y1 marking code transistor
Y1 SOT-23
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y1 npn
Abstract: transistor marking y1
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.
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MMSS8050
OT-23
625Watts
-55OC
OT-23
100uAdc,
40Vdc,
20Vdc,
y1 npn
transistor marking y1
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MMSS8050
Abstract: marking y1 sot-23 Y1 SOT-23 800ma marking Y1 transistor sot-23 MARKING CODE 21 y1 npn
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V
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MMSS8050
OT-23
625Watts
-55OC
OT-23
50mAdc,
10Vdc,
30MHz)
MMSS8050
marking y1 sot-23
Y1 SOT-23
800ma
marking Y1 transistor
sot-23 MARKING CODE 21
y1 npn
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Untitled
Abstract: No abstract text available
Text: Back MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control http://onsemi.com 6 1 PIN CONNECTIONS AND MARKING DIAGRAMS SOT–23L ON/OFF 1 GND 2 BYPASS 3 Features: OFF, no load • • • • • • • • • • Current of 100 mA
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MC33263
r14525
MC33263/D
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28R2
Abstract: 30R2 32R2 MC33263 transistor marking code NW 38R2
Text: MC33263 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control http://onsemi.com 6 1 PIN CONNECTIONS AND MARKING DIAGRAMS SOT–23L ON/OFF 1 GND 2 BYPASS 3 Features: OFF, no load • • • • • • • • • • Current of 100 mA
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MC33263
r14525
MC33263/D
28R2
30R2
32R2
MC33263
transistor marking code NW
38R2
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SS8050LT
Abstract: 8050LT1
Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range
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OT-23
SS8050LT1
100mA
800mA
30MHZ
8050LT1
SS8050LT
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318J-01
Abstract: Nippon capacitors A1 GNC 318J
Text: Order this document by MC33263/D MOTOROLA Advance Information U ltra Low Noise ISO mA Low Dropout Voltage Regulator w ith ON/OFF Control Housed in a SOT23-L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of
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MC33263/D
OT23-L
MC33263
C33263D
318J-01
Nippon capacitors
A1 GNC
318J
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