Untitled
Abstract: No abstract text available
Text: TOP PANEL GROUND 63.65 TOP LED1 X4 0.35 TOP LED2 (X4) 25.40 LEFT PANEL GROUND 28.15 RIGHT PANEL GROUND BOTTOM LED1 (X4) 59.95 X 2.54 3.10 3.50 BOTTOM LED2 (X4) 2.74 1.30 5.46 3.23 0.81 3.38 DETAIL X LED OPTION TABLE: OPTION G Y R 1 2 3 4 5 6 7 1.27 1.60(4)
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IBM REV 2.8 manual motherboard
Abstract: motherboard diagram RISCwatch RCB010 MDL05 POWERPC750 Yellowknife PC87308VUL 83C553 DINK32
Text: Yellowknife X4 User’s Manual Revision 1.0 Yellowknife X4 User’s Manual 5/13/98 Revision 1.0 Preliminary copy, subject to change without notice Page 1 of 39 Revision 1.0 1 Yellowknife X4 User’s Manual OVERVIEW . 4
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SPS/PowerPC/teksupport/tools/DINK32/index
Dink32.
DINK32
IBM REV 2.8 manual motherboard
motherboard diagram
RISCwatch
RCB010
MDL05
POWERPC750
Yellowknife
PC87308VUL
83C553
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PR78A
Abstract: pr77a 2n2222 sot23 PR85A PR80C PR81A PL80B 22HP037 fairchild aa11 47H16M16BG
Text: LatticeSC PCI Express x4 Evaluation Board User’s Guide September 2009 Revision: EB31_01.2 LatticeSC PCI Express x4 Evaluation Board User’s Guide Lattice Semiconductor Introduction This user’s guide describes the LatticeSC PCI Express x4 Evaluation Board featuring the LatticeSC
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LFSCM3GA80EP1-6FC1152C
10NF-0603SMT
100NF-0603SMT
29CD032G
PR78A
pr77a
2n2222 sot23
PR85A
PR80C
PR81A
PL80B
22HP037
fairchild aa11
47H16M16BG
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RN15G
Abstract: 2n2222 sot23 EXBV8V472JV c86 sot23 diode U1J fairchild aa26 PR68A transistor m21 sot23 ucbbje20 J105
Text: LatticeECP2M PCI Express x4 Evaluation Board - Revision A User’s Guide February 2008 Revision: EB22_01.6 Lattice Semiconductor LatticeECP2M PCI Express x4 Evaluation Board - Revision A User’s Guide Introduction This user’s guide describes the LatticeECP2M PCI Express x4 Evaluation Board featuring the LatticeECP2M
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LatticeECP2M35
LatticeECP2M50
1000PF-0402SMT
RN15G
2n2222 sot23
EXBV8V472JV
c86 sot23
diode U1J
fairchild aa26
PR68A
transistor m21 sot23
ucbbje20
J105
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM 256Mb E-die x4, x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) Revision 1.2 October, 2004 Rev. 1.2 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die Revision History Revision 1.0 (June, 2003) - First release
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256Mb
60Ball
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DDR266
Abstract: DDR333 K4H560838E
Text: DDR SDRAM 256Mb E-die x4, x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM 256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die Revision History Revision 1.0 (June, 2003) - First release Revision 1.1 (August, 2003)
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256Mb
60Ball
sequ-65
DDR266
DDR333
K4H560838E
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DDR266
Abstract: No abstract text available
Text: DDR SDRAM stacked 512Mb E-die x4/x8 DDR SDRAM Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) Revision 1.0 Rev. 1.0 July. 2003 DDR SDRAM stacked 512Mb E-die (x4/x8) DDR SDRAM st. 512Mb E-die Revision History Revision 1.0 (July, 2003) - First version release.
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512Mb
DDR266
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM 256Mb E-die x4, x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) Revision 1.0 Rev. 1.0 June. 2003 DDR SDRAM 256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die Revision History Revision 1.0 (June, 2003) - First release Rev. 1.0 June. 2003
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256Mb
60Ball
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W17 sot23
Abstract: 2n2222 smd transistor 2N2222 SMD sot23 m21 2n2222 sot23 PL33A r133 2N2222 SMD SOT23 j50 27r m21 sot23 transistor 1UF-16V-0805SMT
Text: LatticeECP2M PCI Express x4 Evaluation Board – Revision B User’s Guide January 2009 Revision: EB34_01.2 Lattice Semiconductor LatticeECP2M PCI Express x4 Evaluation Board – Revision B User’s Guide Introduction This user’s guide describes the LatticeECP2M PCI Express x4 Evaluation Board Revision B featuring the
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LatticeECP2M35
LatticeECP2M50
1000PF-0402SMT
W17 sot23
2n2222 smd
transistor 2N2222 SMD
sot23 m21
2n2222 sot23
PL33A r133
2N2222 SMD SOT23
j50 27r
m21 sot23 transistor
1UF-16V-0805SMT
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DDR266
Abstract: No abstract text available
Text: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.
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Abstract: No abstract text available
Text: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.3 Revision 1.3 May, 2004 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.
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Abstract: No abstract text available
Text: DDR SDRAM 256Mb E-die x4, x8 DDR SDRAM 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8) Revision 1.0 Rev. 1.0 July. 2003 DDR SDRAM 256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die Revision History Revision 1.0 (July, 2003) - First release Rev. 1.0 July. 2003
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256Mb
60Ball
200MHz
400Mbps
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM stacked 1Gb B-die x4/x8 DDR SDRAM Stacked 1Gb B-die DDR SDRAM Specification (x4/x8) Revision 1.0 Rev. 1.0 June. 2003 DDR SDRAM stacked 1Gb B-die (x4/x8) DDR SDRAM st. 1Gb B-die Revision History Revision 0.0 (May, 2003) - First version for internal review.
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM 256Mb E-die x4, x8 DDR SDRAM 256Mb E-die DDR SDRAM Specification Revision 1.0 Rev. 1.0 April. 2003 DDR SDRAM 256Mb E-die (x4, x8) DDR SDRAM 256Mb E-die Revision History Revision 1.0 (April, 2003) - First release. Rev. 1.0 April. 2003 DDR SDRAM 256Mb E-die (x4, x8)
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256Mb
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Untitled
Abstract: No abstract text available
Text: DDR SDRAM 128Mb E-die x4, x8, x16 DDR SDRAM 128Mb E-die DDR SDRAM Specification Revision 1.0 Rev. 1.0 Dec. 2002 DDR SDRAM 128Mb E-die (x4, x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (December, 2002) - First release Rev. 1.0 Dec. 2002 DDR SDRAM 128Mb E-die (x4, x8, x16)
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128Mb
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NT511740D5J
Abstract: No abstract text available
Text: NT511740D5J 16MEG : x4 CMOS with Extended Data Out NT511740D5J DATA SHEET REV 1.0 May. 2000 1 NANYA TECHNOLOGY CORP. NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. NT511740D5J 16MEG : x4 CMOS with Extended Data Out
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NT511740D5J
16MEG
24/26-PIN
300mil)
NT511740D5J
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NT511740D0J
Abstract: Nanya Technology NT511740
Text: NT511740D0J 16MEG : x4 Fast Page Mode DRAM NT511740D0J DATA SHEET REV 1.0 , JULY. 2000 1 NANYA TECHNOLOGY CORP. NAYNA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. NT511740D0J 16MEG : x4 Fast Page Mode DRAM Contents
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NT511740D0J
16MEG
24/26-PIN
300mil)
NT511740D0J
Nanya Technology
NT511740
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motherboard diagram
Abstract: DH1687 IBM REV 2.8 manual motherboard RCB010 83C553 DINK32 MPC106 PC87308VUL MDL-20 DL23
Text: Yellowknife X4 User’s Manual Revision 1.0 C IN . Yellowknife X4 User’s Manual CH R A ED V I BY EE R F LE A SC S O IC EM R, O CT U ND 5/13/98 Revision 1.0 Preliminary copy, subject to change without notice Page 1 of 39 Revision 1.0 1 2 3 4 5 Yellowknife X4 User’s Manual
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Dink32.
DINK32
motherboard diagram
DH1687
IBM REV 2.8 manual motherboard
RCB010
83C553
MPC106
PC87308VUL
MDL-20
DL23
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JST, SPH-002T-P0.5S
Abstract: jst smd code CI11T011PP0 led red laser R741 smd marking R7 s108p CI1120S0000 5GTH935 CVILUX
Text: Navimec Navimec Module Technical Data: 25,00 Dimensions illuminated Navimec module 8-10 mm Ø3,2 x4 PCB 1,5 8-10 mm 40 32 PCB layout for Navimec solution Ø3,2 (x4) PCB 1,5 20 20 SMD 25,00 4,7 9,6 (incl. housing) 25,00 33 46 33 50 Ø34,25 TH 25,00 7 25,00
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50mA/24VDC
JST, SPH-002T-P0.5S
jst smd code
CI11T011PP0
led red laser
R741
smd marking R7
s108p
CI1120S0000
5GTH935
CVILUX
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Untitled
Abstract: No abstract text available
Text: ConnectPort X4 Family Customizable Commercial-Grade 3G/4G Routing Gateways Remote M2M device networking gateways designed for commercial grade and rugged outdoor applications. Headquarters Ethernet Cellular/ VPN RS-485 DC MAX ConnectPort® X4 H a Nem rt
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RS-485
ZigBee/802
IP66/NEMA
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samsung k4s561632e
Abstract: CMOS SDRAM K4S560432E K4S560432E-TC K4S560832E K4S561632E
Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM
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256Mb
166MHz
16Bit
A10/AP
samsung k4s561632e
CMOS SDRAM
K4S560432E
K4S560432E-TC
K4S560832E
K4S561632E
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K4S640432H-TC
Abstract: K4S640832H K4S641632H K4S641632H-TC
Text: SDRAM 64Mb H-die x4, x8, x16 CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.3 October 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 October 2003 SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM
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A10/AP
K4S640432H-TC
K4S640832H
K4S641632H
K4S641632H-TC
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE D • b lllS ^ TECHNOLOGY, INC. DRAM 4 MEG X4 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply: +3.3V ±10%
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125mW
048-cycle
096-cycle
00043b7
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 5SE D • b lllS M T TECHNOLOGY INC DRAM 4 MEG X4 DRAM DRAM 5.0V FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply : +5V ±10%
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325mW
048-cycle
096-cycle
24-Pin
A11/NC
QGG4355
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