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    X-BAND GAN HEMT Search Results

    X-BAND GAN HEMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    X-BAND GAN HEMT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SGK0910-60A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=48.0dBm Typ.  High Gain: GL=12.0dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package


    Original     		PDF SGK0910-60A-R 50ohm SGK0910-60A-R 50ohm

    SGK0910-120A-R

    Abstract: No abstract text available
    Text: SGK0910-120A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=51.0dBm Typ.  High Gain: GL=11.5dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package


    Original     		PDF SGK0910-120A-R 50ohm SGK0910-120A-R 50ohm

    Untitled

    Abstract: No abstract text available
    Text: SGK0910-30A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=45.0dBm Typ.  High Gain: GL=12.0dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package


    Original     		PDF SGK0910-30A-R 50ohm SGK0910-30A-R 50ohm

    GaN amplifier

    Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
    Text: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-013 AN-013: NPTB00004 12-Watt NPT25100 MRF6S9125 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

    Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
    Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI7785-120L 25dBc 20dBm No1215

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI7785-120L 25dBc 20dBm No1225

    Untitled

    Abstract: No abstract text available
    Text: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB


    Original     		PDF RFSW2100D 30MHz 6000MHz DS120620

    "RF Switch"

    Abstract: rf switch RFMD HEMT GaN SiC SiC BJT RFSW2100D GaN BJT
    Text: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB


    Original     		PDF RFSW2100D RFSW2100D 30MHz 6000MHz DS120620 "RF Switch" rf switch RFMD HEMT GaN SiC SiC BJT GaN BJT

    Untitled

    Abstract: No abstract text available
    Text: RFSW2100 45W GaN-onSiC Reflective SPDT RF Switch RFSW2100 Proposed 45W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Package: QFN, 12-Pin, 3mm x 3mm Features  Broadband Operation 30MHz to 6GHz  Advanced GaN HEMT Technology  2GHz Typical Performance  Insertion Loss <0.4dB


    Original     		PDF RFSW2100 12-Pin, 30MHz DS120614

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI1314-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 8.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=37.0dBm Single Carrier Level


    Original     		PDF TGI1314-25L 75GHz 25dBc 20dBm No1210 7-AA07A)

    transistor C1096

    Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band
    Text: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs


    Original     		PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C


    Original     		PDF TGI0910-50 20dBm 7-AA04A) No1217

    TGI8596-50

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C


    Original     		PDF TGI8596-50 20dBm 7-AA04A) No1216 TGI8596-50

    GaAs HEMTs X band

    Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
    Text: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 40.0dBm ･HIGH GAIN GL= 11.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=32.0dBm Single Carrier Level


    Original     		PDF TGI7785-50L 40dBc 7-AA04A) No1209

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI7785-25L 40dBc 7-AA04A) No1214

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI5867-25L 85GHz 75GHz -40dBc 20dBm 7-AA04A) No1226

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=32.0dBm Single Carrier Level


    Original     		PDF TGI5867-50L 85GHz 75GHz -40dBc 20dBm 7-AA04A) No1227

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level


    Original     		PDF TGI7785-25L 40dBc 7-AA04A) No1223

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 43.0dBm ･HIGH GAIN GL= 13.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level


    Original     		PDF TGI5964-120L 25dBc 43dBm 7-AA06A) No1220