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    X BAND HIGH POWER AMPLIFIER Search Results

    X BAND HIGH POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPC844GR(20)-9LG-E1-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Quad Operational Amplifier Visit Renesas Electronics Corporation
    UPC844GR(20)-9LG-E2-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Quad Operational Amplifier Visit Renesas Electronics Corporation
    UPC842G2(20)-E2-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation
    UPC844G2(20)-E1-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Quad Operational Amplifier Visit Renesas Electronics Corporation
    UPC844G2(20)-E2-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Quad Operational Amplifier Visit Renesas Electronics Corporation

    X BAND HIGH POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CPI Helix tube

    Abstract: WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202
    Text: CPI 1.0kW X-Band TWT Amplifier for Instrumentation Applications X- Band The VZX-2783C1 x-Band 1.0 kW TWT High Power Amplifier features high efficiency and power for EMC/EMI testing. Safety Provides 1000 watts of power in the 8.0 to 12.75 GHz frequency band in a compact 19inch rack-mount dual drawer configuration for


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    PDF VZX-2783C1 19inch MKT-202, CPI Helix tube WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202

    solid state amplifier

    Abstract: operation of class c amplifier
    Text: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C


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    X-band amplifier

    Abstract: CHA7115 x-band power transistor x-Band High Power Amplifier
    Text: CHA7115 X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at


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    PDF CHA7115 CHA7115 39dBm DSCHA71150082 X-band amplifier x-band power transistor x-Band High Power Amplifier

    cha7215

    Abstract: x-Band High Power Amplifier
    Text: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power


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    PDF CHA7215 CHA7215 19dBm DSCHA72159287 x-Band High Power Amplifier

    CHA8100

    Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
    Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power


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    PDF CHA8100 CHA8100 DSCHA81000069 x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105

    x-Band High Power Amplifier

    Abstract: x-band HPA 3 W CHA8100 CHA8100-99F TO9 thermal resistance
    Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power


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    PDF CHA8100 CHA8100 DSCHA81009083 x-Band High Power Amplifier x-band HPA 3 W CHA8100-99F TO9 thermal resistance

    CHA7115

    Abstract: x-Band High Power Amplifier 39dBm x-band power amplifier
    Text: CHA7115 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at


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    PDF CHA7115 CHA7115 39dBm DSCHA71150082 x-Band High Power Amplifier 39dBm x-band power amplifier

    Untitled

    Abstract: No abstract text available
    Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power


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    PDF CHA8100 CHA8100 DSCHA81000069

    x-Band High Power Amplifier

    Abstract: CHA7215
    Text: CHA7215 X-band High Power Amplifier GaAs Monolithic Microwave IC Vg3 Description Vd3 Vd2 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 36% power added efficiency at


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    PDF CHA7215 CHA7215 19dBm DSCHA72159040 x-Band High Power Amplifier

    Untitled

    Abstract: No abstract text available
    Text: CHA7115-99F RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description Vg3 Vd3 The CHA7115 is a monolithic three-stage GaAs high power amplifier designed for X-band applications. The HPA provides typically 8W output power associated to 36% power added efficiency at


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    PDF CHA7115-99F CHA7115 DSCHA71151069

    CHA7010

    Abstract: x-Band High Power Amplifier
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


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    PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier

    x-Band High Power Amplifier

    Abstract: 10Ghz RF Power 10w amplifier CHA7010
    Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP


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    PDF CHA7010 CHA7010 DSCHA70104054 x-Band High Power Amplifier 10Ghz RF Power 10w amplifier

    Untitled

    Abstract: No abstract text available
    Text: Solid State Pulsed Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-15 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state pulsed power amplifier that operates • Pulsed RF and Pulsed DC Operation


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    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


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    PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    Untitled

    Abstract: No abstract text available
    Text: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R 1 1 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficiency at


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    PDF CHA7215 CHA7215 19dBm DSCHA72159287

    FMA3015

    Abstract: No abstract text available
    Text: FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 15dB Gain 5W Saturated Output Power at 9V pHEMT Technology VD GENERAL DESCRIPTION RF Input The FMA3015 is a high performance X-Band


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    PDF FMA3010 FMA3015 22-A114. MIL-STD-1686 MILHDBK-263.

    MIL-STD-1686

    Abstract: No abstract text available
    Text: FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 12dB Gain 7.5W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3015 is a high performance X-Band


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    PDF FMA3015 FMA3015 22-A114. MIL-STD-1686 MILHDBK-263.

    SSPA

    Abstract: x-Band High Power Amplifier x-band power transistor Solid State Microwave x band high power amplifier x band receiver x band pulsed amplifier x band satellite
    Text: Solid State Power Amplifier High Power X Band Solid State RF Amplifier Aethercomm P/N SSPA 9.5-10.5-20 is a high power, • 20 watts typical CW or pulsed RF power X band, solid state power amplifier. Class AB biasing • Operation from 9.5 to 10.5 GHz affords high output power pulsed or CW while


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    FMA3012

    Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
    Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band


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    PDF FMA3012 FMA3012 22-A114. MIL-STD-1686 MILHDBK-263. 22-A114 x-Band High Power Amplifier x-band mmic

    x-Band High Power Amplifier

    Abstract: CHA7012
    Text: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA7012 CHA7012 DSCHA70127235 x-Band High Power Amplifier

    x-Band High Power Amplifier

    Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA7010 CHA7010 DSCHA70103135 x-Band High Power Amplifier 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters

    CHA7010

    Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
    Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


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    PDF CHA7010 CHA7010 DSCHA70102175 -24-June-02 x-Band High Power Amplifier x band Gaas Power Amplifier 10W

    X-band Gan Hemt

    Abstract: FMA3015 MIL-HDBK-263 9-GHz
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


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    PDF FMA3015 52mmx3 FMA3015 FMA3015-000 FMA3015-000SQ FMA3015-000S3 DS081118 FMA3015-000SB X-band Gan Hemt MIL-HDBK-263 9-GHz

    Untitled

    Abstract: No abstract text available
    Text: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS


    OCR Scan
    PDF CHA7114 CHA7114 DSCHA7114-0197