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    WA 22 SIEMENS Search Results

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    TQX6273

    Abstract: simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227
    Text: SIEMENS ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC54 and FALC-LH PEB 2254 PEB 2255 Crystal recommendation Application Note 12.97 PEB 2255 Revision History : Previous Version : None Page Page Current Version : 12.97


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    PDF FALC54 254-A TQX6273 simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227

    aktive elektronische bauelemente ddr

    Abstract: hamatech rde 090 0 280 130 023 bosch 735 linear technologie bosch 0 130 002 562 OSRAM TRANSCEIVER stu 407 bauelemente DDR 101B
    Text: Inhaltsverzeichnis Lagebericht und Konzernlagebericht . . . . . . . Bericht des Aufsichtsrates . . . . . . . . . . . . . . . Konzern-Gewinn- und Verlustrechnungen . . . Konzernbilanzen . . . . . . . . . . . . . . . . . . . . . Entwicklung des Konzerneigenkapitals . . . . .


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    PDF

    panasonic minas

    Abstract: DV0P37300 h1162 Service manual Servo Driver Panasonic matsua motor encoder
    Text: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01


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    PDF 1000a ISO14001 ISO14001 ISO9001 ISO9001 panasonic minas DV0P37300 h1162 Service manual Servo Driver Panasonic matsua motor encoder

    80C200

    Abstract: 82C200 C165 EMM386 SJA1000 8259+Interrupt+Controller
    Text: pcCAN Hard- und Softwaremanual Ausgabe Juli 1998 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG pcCAN Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das


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    PDF L-315d D-55135 80C200 82C200 C165 EMM386 SJA1000 8259+Interrupt+Controller

    smd JSs

    Abstract: No abstract text available
    Text: SIEMENS SDA 2526 MOS IC Nonvolatile Memory 2-Kbit E2PROM with 12C Bus Interface Features • • • • • • • • • W ord-organized program m able nonvolatile memory in n-channel floating-gate technology E2PROM 256 x 8-bit organization Supply voltage 5 V


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    PDF 25X26-5 25X26 Q67100-H5095 67100-H3253 Q67100-H3257 Q67100-H3258 smd JSs

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    Abstract: No abstract text available
    Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus SDA 2526-5 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    PDF Q67100-H0 00b32fi4

    SIEMENS BSt L 45 100

    Abstract: 0D4T
    Text: bOE ] • flE3SbDS DD4T371 274 M S I E S SIEM ENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 1-Kbit E2PROM with I 2C Bus SDA 2516-2 Preliminary Data MOS IC Features • W ord-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM)


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    PDF DD4T371 SIEMENS BSt L 45 100 0D4T

    transistor kA2 smd

    Abstract: AEP01481
    Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms


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    PDF Q67000-A9153 P-T0220-7-3 67006-A P-T0220-7-180 Q67000-A9246 P-T0220-7-230 GPT05887 transistor kA2 smd AEP01481

    e1414

    Abstract: siemens master drive circuit diagram Siemens pulse sequence
    Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    PDF 25X26-5 25X26 Q67100-H5095 Q67100-H3253 Q67100-H3257 Q67100-H3258 E1414 023SbG5 siemens master drive circuit diagram Siemens pulse sequence

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    PDF Q67100-H3254 Q67100-H34 E1414 023SbG5

    e1414

    Abstract: siemens master drive circuit diagram L1152B siemens sda
    Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    PDF 25X16-5 25X16 Q67100-H5092 Q67100-H3252 Q67100-H3255 Q67100-H3256 E1414 023SbG5 siemens master drive circuit diagram L1152B siemens sda

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    PDF Q67100-H5102 E1414 023SbG5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I 2C Bus Interface SDA 2546 MOS 1C Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    PDF Q67100-H5096 25X46-5 Q67100-H3259 E1414 023SbG5

    siemens master drive circuit diagram

    Abstract: 9221 st tgl 4977 Q67100-H3260 Q67100-H5101 SDA2586 siemens sda2586 UEBOI276 CI 4583
    Text: SIEMENS «easbos a a a s i a a 771 Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586 MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V


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    PDF Q67100-H5101 25X86-5 Q67100-H3260 S-164 fl23SbG5 siemens master drive circuit diagram 9221 st tgl 4977 SDA2586 siemens sda2586 UEBOI276 CI 4583

    siemens master drive circuit diagram

    Abstract: AKER Ah NL-2500 TD13 park 16068 siemens 7st
    Text: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I2C Bus and Write Protection SDA 3546-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)


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    PDF Q67100-H5098 S-164 fl23SbG5 siemens master drive circuit diagram AKER Ah NL-2500 TD13 park 16068 siemens 7st

    K 192 A transistor

    Abstract: No abstract text available
    Text: SIEMENS BCR 192 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22ki2, R2=47kQ Type BCR 192 Marking Ordering Code Pin Configuration WPs Q62702-C2265 1=B Package 2=E 3=C SOT-23


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    PDF 22ki2, Q62702-C2265 OT-23 K 192 A transistor

    BPX38

    Abstract: flux meter glass lens phototransistor
    Text: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)


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    PDF BPX38 fi23SbOS D027501 flux meter glass lens phototransistor

    bo434

    Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
    Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages


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    PDF 00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202

    D 5464

    Abstract: 5423-PO
    Text: SIEMENS CMPNTS-, OPTO SIEMENS 44E D fl23b32b QGQSMM4 □ H S I E X LH 5423-PO SINGLE HETRO JUNCTION LH 5463-KO DOUBLE HETRO JUNCTION LH 5424-QO DOUBLE HETRO JUNCTION LH 5464-LO SINGLE HETRO JUNCTION HYPER RED GaAIAs T13/4 5mm LED LAMP _


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    PDF fl23b32b 5423-PO 5463-KO 5424-QO 5464-LO T--47--73 LH5424 LHS464 LH5423/5464/S424/5464 23b32b D 5464

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz Q62702-F1314 OT-23 Junctio30 Q122DÃ BFR181 IS21I2 E35bD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage


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    PDF O-218AA C67078-A3209-A2 O-218AA

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FEATURES • High Currant Transfer Ratio CNY17F-1, 40-80% CNY17F-2,63-125% CNY17F-3,100-200% CNY17F-4,100-320% • Breakdown Voltage, 5300 VACRM8 • High Collector'Emitter Voltage • VCEO-7 0 V • No Base Terminal Connection for Im­ proved Common Mode Interface Immunity


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    PDF CNY17F-1, CNY17F-2 CNY17F-3 CNY17F-4 E52744 CNY17F VCNY17F-1

    smd transistor A1s

    Abstract: smd transistor 7D A1s smd TRANSISTOR SMD A1S
    Text: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4270 Features • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms


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    PDF Q67000-A9209-A903 P-T0220-5-11 Q67000-A9243-A904 P-T0220-5-12 006-A9201-A901 P-T0263-5-1 Q67000-A9209-A801 P-T0220-5-1 Q67000-A9243-A802 P-T0220-5-2 smd transistor A1s smd transistor 7D A1s smd TRANSISTOR SMD A1S

    s34 smd diode

    Abstract: diode smd vw3 marking s34 tle420 s34 diode
    Text: SIEMENS 1-A Quad-HBD Quad-Half-Bridge Driver TLE 4208 Overview Features • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption


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    PDF Q670Q7-A9335 DSO-28-6 AEDQ2310 P-DSO-28-6 s34 smd diode diode smd vw3 marking s34 tle420 s34 diode