TQX6273
Abstract: simpson 464 Tele Quartz Group 16.384 MHz Tele Quarz Group Crystal Oscillator HC-49 crystal Tele Quarz Group 16.384 CT 9254 Telcona N1086 30227
Text: SIEMENS ICs for Communications Framing and Line Interface Component for PCM 30 and PCM 24 FALC54 and FALC-LH PEB 2254 PEB 2255 Crystal recommendation Application Note 12.97 PEB 2255 Revision History : Previous Version : None Page Page Current Version : 12.97
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FALC54
254-A
TQX6273
simpson 464
Tele Quartz Group 16.384 MHz
Tele Quarz Group Crystal Oscillator
HC-49 crystal
Tele Quarz Group 16.384
CT 9254
Telcona
N1086
30227
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aktive elektronische bauelemente ddr
Abstract: hamatech rde 090 0 280 130 023 bosch 735 linear technologie bosch 0 130 002 562 OSRAM TRANSCEIVER stu 407 bauelemente DDR 101B
Text: Inhaltsverzeichnis Lagebericht und Konzernlagebericht . . . . . . . Bericht des Aufsichtsrates . . . . . . . . . . . . . . . Konzern-Gewinn- und Verlustrechnungen . . . Konzernbilanzen . . . . . . . . . . . . . . . . . . . . . Entwicklung des Konzerneigenkapitals . . . . .
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panasonic minas
Abstract: DV0P37300 h1162 Service manual Servo Driver Panasonic matsua motor encoder
Text: 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 0100 10 0100 1000100 10 0100 1000100 10 0100 1000100 10 01
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1000a
ISO14001
ISO14001
ISO9001
ISO9001
panasonic minas
DV0P37300
h1162
Service manual Servo Driver Panasonic
matsua motor encoder
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80C200
Abstract: 82C200 C165 EMM386 SJA1000 8259+Interrupt+Controller
Text: pcCAN Hard- und Softwaremanual Ausgabe Juli 1998 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG pcCAN Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das
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L-315d
D-55135
80C200
82C200
C165
EMM386
SJA1000
8259+Interrupt+Controller
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smd JSs
Abstract: No abstract text available
Text: SIEMENS SDA 2526 MOS IC Nonvolatile Memory 2-Kbit E2PROM with 12C Bus Interface Features • • • • • • • • • W ord-organized program m able nonvolatile memory in n-channel floating-gate technology E2PROM 256 x 8-bit organization Supply voltage 5 V
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25X26-5
25X26
Q67100-H5095
67100-H3253
Q67100-H3257
Q67100-H3258
smd JSs
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus SDA 2526-5 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H0
00b32fi4
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SIEMENS BSt L 45 100
Abstract: 0D4T
Text: bOE ] • flE3SbDS DD4T371 274 M S I E S SIEM ENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 1-Kbit E2PROM with I 2C Bus SDA 2516-2 Preliminary Data MOS IC Features • W ord-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM)
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DD4T371
SIEMENS BSt L 45 100
0D4T
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transistor kA2 smd
Abstract: AEP01481
Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms
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Q67000-A9153
P-T0220-7-3
67006-A
P-T0220-7-180
Q67000-A9246
P-T0220-7-230
GPT05887
transistor kA2 smd
AEP01481
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e1414
Abstract: siemens master drive circuit diagram Siemens pulse sequence
Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)
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OCR Scan
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25X26-5
25X26
Q67100-H5095
Q67100-H3253
Q67100-H3257
Q67100-H3258
E1414
023SbG5
siemens master drive circuit diagram
Siemens pulse sequence
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H3254
Q67100-H34
E1414
023SbG5
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e1414
Abstract: siemens master drive circuit diagram L1152B siemens sda
Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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25X16-5
25X16
Q67100-H5092
Q67100-H3252
Q67100-H3255
Q67100-H3256
E1414
023SbG5
siemens master drive circuit diagram
L1152B
siemens sda
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)
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Q67100-H5102
E1414
023SbG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I 2C Bus Interface SDA 2546 MOS 1C Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H5096
25X46-5
Q67100-H3259
E1414
023SbG5
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siemens master drive circuit diagram
Abstract: 9221 st tgl 4977 Q67100-H3260 Q67100-H5101 SDA2586 siemens sda2586 UEBOI276 CI 4583
Text: SIEMENS «easbos a a a s i a a 771 Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586 MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V
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Q67100-H5101
25X86-5
Q67100-H3260
S-164
fl23SbG5
siemens master drive circuit diagram
9221 st
tgl 4977
SDA2586
siemens sda2586
UEBOI276
CI 4583
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siemens master drive circuit diagram
Abstract: AKER Ah NL-2500 TD13 park 16068 siemens 7st
Text: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I2C Bus and Write Protection SDA 3546-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)
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Q67100-H5098
S-164
fl23SbG5
siemens master drive circuit diagram
AKER Ah
NL-2500
TD13
park 16068
siemens 7st
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K 192 A transistor
Abstract: No abstract text available
Text: SIEMENS BCR 192 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22ki2, R2=47kQ Type BCR 192 Marking Ordering Code Pin Configuration WPs Q62702-C2265 1=B Package 2=E 3=C SOT-23
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22ki2,
Q62702-C2265
OT-23
K 192 A transistor
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BPX38
Abstract: flux meter glass lens phototransistor
Text: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)
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BPX38
fi23SbOS
D027501
flux meter
glass lens phototransistor
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bo434
Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages
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00043bfl
BD434
BD440
BD442
BD441.
t25mn
434/BD
436/BD
023SbOS
G00437H
bo434
b0436
TRANSISTOR BD 437
BD 434
transistor BD 141
BD436
DIN137
80442
transistor 438
Q62702-D202
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D 5464
Abstract: 5423-PO
Text: SIEMENS CMPNTS-, OPTO SIEMENS 44E D fl23b32b QGQSMM4 □ H S I E X LH 5423-PO SINGLE HETRO JUNCTION LH 5463-KO DOUBLE HETRO JUNCTION LH 5424-QO DOUBLE HETRO JUNCTION LH 5464-LO SINGLE HETRO JUNCTION HYPER RED GaAIAs T13/4 5mm LED LAMP _
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fl23b32b
5423-PO
5463-KO
5424-QO
5464-LO
T--47--73
LH5424
LHS464
LH5423/5464/S424/5464
23b32b
D 5464
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
Q62702-F1314
OT-23
Junctio30
Q122DÃ
BFR181
IS21I2
E35bD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage
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O-218AA
C67078-A3209-A2
O-218AA
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Untitled
Abstract: No abstract text available
Text: SIEMENS FEATURES • High Currant Transfer Ratio CNY17F-1, 40-80% CNY17F-2,63-125% CNY17F-3,100-200% CNY17F-4,100-320% • Breakdown Voltage, 5300 VACRM8 • High Collector'Emitter Voltage • VCEO-7 0 V • No Base Terminal Connection for Im proved Common Mode Interface Immunity
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CNY17F-1,
CNY17F-2
CNY17F-3
CNY17F-4
E52744
CNY17F
VCNY17F-1
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smd transistor A1s
Abstract: smd transistor 7D A1s smd TRANSISTOR SMD A1S
Text: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4270 Features • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms
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Q67000-A9209-A903
P-T0220-5-11
Q67000-A9243-A904
P-T0220-5-12
006-A9201-A901
P-T0263-5-1
Q67000-A9209-A801
P-T0220-5-1
Q67000-A9243-A802
P-T0220-5-2
smd transistor A1s
smd transistor 7D
A1s smd TRANSISTOR
SMD A1S
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s34 smd diode
Abstract: diode smd vw3 marking s34 tle420 s34 diode
Text: SIEMENS 1-A Quad-HBD Quad-Half-Bridge Driver TLE 4208 Overview Features • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption
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Q670Q7-A9335
DSO-28-6
AEDQ2310
P-DSO-28-6
s34 smd diode
diode smd vw3
marking s34
tle420
s34 diode
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