full bridge igbt induction heating generator
Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH
Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets
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50no3
Abstract: ixys vuo 52 input id VUO 190-08NO7 VVZ24 100-16no 70no7 8614n vvz 175 fast recovery epitaxial diode FRED module bridge INVERTER 500 W SMPS
Text: 3~ Rectifier Bridges Contents A 1 2 3 4 5 6 Page VUO 16-.NO1 VUO 22-.NO1 VUO 25-.NO8 VUO 28-.NO8 VUO 36-.NO8 VUO 35-.NO7 VUO 34-.NO1 VUO 30-.NO3 VUO 52-.NO1 VUO 50-.NO3 VUO 55-.NO7 VUO 62-.NO7 VUO 68-.NO7 VUO 70-.NO7 VUO 60-.NO3 VUO 80-.NO1
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F2-11
F2-13
F2-15
F2-17
F2-19
F2-21
F2-23
F2-24
F2-25
F2-26
50no3
ixys vuo 52 input id
VUO 190-08NO7
VVZ24
100-16no
70no7
8614n
vvz 175
fast recovery epitaxial diode FRED module bridge
INVERTER 500 W SMPS
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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thyristor MTT 25 N 14
Abstract: E72873 13-14N02 ls 7472 25-16N02 vuo 35-12n07 36-16io1 VHF15-16 50-04N03 mtt 95 a 12 n
Text: e I Rectifier Bridges, 1~ ki L-n — —N— Rectifier Bridges, 1 ~ with DCB-Ceram ic Base V *BMS 'd *v @ T c Type *F3U 45°C 10 ms A Vto rF ^VJM V »c K/W 85 220 0.85 m il 17 150 5.6 K/W 0.4 § E 72 873 (M) > New V VBO 13-16N02 • VBO 13-14N02 VBO 13-12N02
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13-16N02
13-14N02
13-12N02
13-08N02
13-16A02
13-14A02
13-12A02
20-16N02
20-14N02
20-12N02
thyristor MTT 25 N 14
E72873
ls 7472
25-16N02
vuo 35-12n07
36-16io1
VHF15-16
50-04N03
mtt 95 a 12 n
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62-08N
Abstract: VUO 35-12 N 0 7 6n03 50-08N 6208N VUO 36-14 N 0 7 55-14N 2014n 82-08N 50-04N03
Text: HbflbEHfc, 0 0 0 1 3 7 3 730 « I X Y Rectifier Bridges, 3~ 9 1• 1 J hj w \ w * L -N — v RRM vvRMS Type Í Í £ E 72 873 (M) ► New ► VUO 30-18 N 0 3 ’ VUO 30-16N 0 3 • VUO 20 ■'6N03 • VUO 30-14N 0 3 • VUO 20-14N 03 VUO 30-12N 0 3 • VUO 20-12N 03
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30-16N
30-14N
20-14N82-08N
105-18N
105-16N
105-14N07
105-12N
62-08N
VUO 35-12 N 0 7
6n03
50-08N
6208N
VUO 36-14 N 0 7
55-14N
2014n
82-08N
50-04N03
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62-08N
Abstract: b6u 380 125-14N 110-18N 190-12N 190-08N 60-08N 11016N 80-16N01 10016n
Text: 1 ~ /3 ~ High Voltage Rectifier Modules UGB UGP UGE^ V Type V V V A ^FSM 45°C 10 ms A 300 180 120 70 RRM vRMS *dAV 0 > / UGE 0421 UG E0221 UGE 1112 UGE 3126 AY4 AY4 AY4 AY4 3200 4800 8000 24000 1125 1750 3000 9000 23/7.4 10/3.8 4.2/2.0 2.0/0.8 UGB 3132
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E0221
155-12N01
155-16N01
160-08N
160-12N
160-14N
160-16N
125-12N
125-14N
125-16N07
62-08N
b6u 380
110-18N
190-12N
190-08N
60-08N
11016N
80-16N01
10016n
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52-16N01
Abstract: vuo 35-12n07 35-16N07 36-16N07 35-12N07 vuo 50-08N03 30-08N03 34-14N01 52-12N01 35-14N07
Text: 1 ~ / 3 ~ High Voltage Rectifier Modules vRMS ^dAV *FSM / V m£2 1.7 2.55 4.25 12 - 16 90 215 1800 - - - V V A 45°C 10 ms A UGE 0421 AY4 UGE0221 AY4 UGE 1112 AY4 UGE 3126 AY4 3200 4800 8000 24000 1125 1750 3000 9000 23/7.4 10/3.8 4.2/2.0 2.0/0.8 300
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UGE0221
UGB3132
UGB6124
UGD6123
UGD8124
52-16N01
vuo 35-12n07
35-16N07
36-16N07
35-12N07
vuo 50-08N03
30-08N03
34-14N01
52-12N01
35-14N07
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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14n03
Abstract: VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07
Text: 3~ Rectifier Bridges, B6U Type ^IhJC PSM ► New A -C 45°C 10 ms A 50 130 4.5 46 0.75 120° sine 100 0.8 40 130 3.1 0.516 (120° sine) 300 0.8 15 130 2.5 0.42 (120° sine) 250 400 440 500 575 800 1400 1600 1800 250 400 440 500 575 800 1200 1400 1600 1800
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VU016-08N01
16-12N01
16-14N01
16-16N01
16-18N01
08N01
12N01
14N01
16N01
18N01
14n03
VU0110-16N07
vuo 82-12N07
vu0110
08N03
12N03
VU016-
16N03
190-16N07
16N07
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Untitled
Abstract: No abstract text available
Text: Three Phase Rectifier Bridges V RSM V RRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Sym bol VUO 16 I dAVM v ¥ 4/5 T yp e r* VUO VUO VUO VUO VUO T k « 90°C , module T a = 4 5 °C R>iKA = 0.5 K/W , module I^AVM module Ifsu TVJ = 45°C ; t V t =
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35-18N07
Abstract: 35-16N07 35-12N07 vuo 35-12n07
Text: Three Phase Rectifier Bridge VRSM V RRM V V 600 1200 1400 1600 1800 600 1200 1400 1600 1800 IdAVM — 38 A VRRM =1200-1800 V Type VUO VUO VUO VUO VUO 35-06N07 35-12N07 35-14N07 35-16N07 35-18N07* * delivery time on request Symbol Test Conditions ^dA VM Tc = 85°C, module
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35-06N07
35-12N07
35-14N07
35-16N07
35-18N07*
F2-11
F2-12
35-18N07
vuo 35-12n07
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Untitled
Abstract: No abstract text available
Text: FUJITSU HICROELECTRONICS 75 d Ë | 374^7^5 000333^ 4 3749762 FUJITSU MICROELECTRONICS 78C 03339 FU JITSU M OS M em ories • M B 8 4 1 8 A -1 2 , M B 8 4 1 8 A -1 2 L, M B 8 4 1 8 A -1 5 , M B 8 4 1 8 A -1 5 L CMOS 16,384-Bit Static Random Access Memory Daaorlptlon
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T-46-23-12
384-Bit
MB8416A
2048-word
MB8418A
B8418A-12
B8418A-12L
B8418A-1SL
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15p capacitor
Abstract: No abstract text available
Text: N J QUARTZ CRYSTAL 3 7 5 Series OSCILLATOR PACKAGE OUTLINE GENERAL DESCRIPTION The NJU6375 series is a C-MOS quartz crystal oscilla tor which consists of an oscillation amplifier and a 3-state output buffer. This series are classed into six versions A, B. C and
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NJU6375
osci11
NJU6375H/J/K)
1000p
15p capacitor
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as1012
Abstract: AS15 G LC3517A15 LC3517A-15 as15 h AS15 G IC LC3517
Text: SANYO S EMI CONDUCT OR CORP S3E J> ? tï ei 7 0 7 b 0Q10CH3 a?T I TSAJ r-^ té -2 s -n l0 /d > n n fi n u m b r . EN 23611 CMOS LSI F SANYO i LC3517A. AM. AS. AL, AML, ASL 2048-word x 8-bit CMOS Static RAM OVERVIEW PACKAGE DIMENSIONS LC3517A series devices are silicon-gate CMOS, static
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i707b
0Q10CH3
LC3517A.
2048-word
3072-DIP24NS
LC3S17A/AL)
LC3517A
LC3517AL,
LC3517AML
as1012
AS15 G
LC3517A15
LC3517A-15
as15 h
AS15 G IC
LC3517
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S7116A
Abstract: s-7116A s7116A tone 7116A 1750 Hz TONE dEcoder s7116 E 13007 0 CQ 2.000 crystal oscillator
Text: S-7116A TONE GENERATOR The S-7116A is a ton e g e n e ra to r fa b rica te d using the CMOS process. It is com posed of an 11-stage program counter, an 8-stage Johnson counter, a program decoder and a resistor ladder network. • Features • Highly accurate and stable tones of both 38 frequencies ranging from 67 Hz to 250.3 Hz and 19
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S-7116A
S-7116A
11-stage
14-pin
18max.
S7116A
s7116A tone
7116A
1750 Hz TONE dEcoder
s7116
E 13007 0
CQ 2.000 crystal oscillator
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OZ 9938
Abstract: Color TV vertical section ICs M51496P 4433619 oscillator OZ 9938 G 36P4E M52025SP M52026SP PV60 TV50
Text: MITSUBISHI ICs TV M52025SP PAL/NTSC VIDEO CHROMA DEFLECTION DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52025SP is a semiconductor integrated circuit for video, chroma, and deflection signal processing. Combined with 1C component M 51496Pfor VIF/SIF, it realizes practical
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M52025SP
M52025SP
M51496Pfor
M52026SP
b241fl2b
OZ 9938
Color TV vertical section ICs
M51496P
4433619 oscillator
OZ 9938 G
36P4E
PV60
TV50
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Untitled
Abstract: No abstract text available
Text: 1M x 16 SRAM MODULE molaic MS161000FKX-70/85/100/120 Issue 1.1 : April 1990 ADVANCE PRODUCT INFORMATION /" Sem iconductor Inc. 1,048,576 x 16 CMOS High Speed Static RAM Features Fast Access Times of 70/85/100/120 ns. 44 Pin DIL Package -1.9" pitch Low Power Standby 2mW typ. L suffix
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MS161000FKX-70/85/100/120
940mW
600mW
MS161000FKXL1-70
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42 E ]> 71 bmM 2. OGI0 7 b l T I KM6264A/KM6264AL/KM6264ALL CMOS SRAM " T ^ e v ? 8 K x 8 B i t S t a t ic R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns (max. • Low Power Dissipation Standby (CMOS): 10/jW (typ.) L-Verslon
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KM6264A/KM6264AL/KM6264ALL
10/jW
220mW
KM6264A/AL/AL-L:
28-pin
KM6264AG/ALG/ALG-L:
28-pln
KM6264A/AL/AL-L
536-blt
KM6264A/KM6264AL/KM6264AL-L
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M52023SP
Abstract: rti sg16 sb 9v V14p 9V27 52P4B SG10 SG14 SG16
Text: MITSUBISHI ICs TV M52023SP NTSC VIDEO CHROMA DEFLECTION DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52023SP is semiconductor integrated circuit that processes video, color, and vertical/horizontal sync signals of the line. FEATURES •Equipped with delay-line contour adjustment for sharper
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M52023SP
M52023SP
jp35-
rti sg16
sb 9v
V14p
9V27
52P4B
SG10
SG14
SG16
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M51308SP
Abstract: m51346ap M51390ASP m51412sp M51346 PAL 007 A m51308 NOTES M51390 m51412
Text: M ITSU BISHI ICS A V CO M M O N M51390ASP PAL/NTSC VIDEO CH R O M A DEFLECTIO N DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M51390ASP is a semiconductor integrated circuit for video, chroma, and deflection. Combined with IC M51346AP B-Y OUT d R-Y OUT E
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M51390ASP
M51390ASP
M51346AP
32-pin,
0021GÃ
M51308SP
m51412sp
M51346
PAL 007 A
m51308
NOTES
M51390
m51412
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BUZ21
Abstract: No abstract text available
Text: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE
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SS4735
BUZ21
O-220AB
QQ14bQQ
BUZ21
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN%4712| CMOS LSI LC331664M, ML-70/80/10 1 MEG 65536 words x 16 bits Pseudo-SRAM Overview Package Dimensions The LC331664 series is composed of pseudo static RAM that operate on a single 5 V pow er supply and are organized as 65536 words x 16 bits. By using memory
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LC331664M,
ML-70/80/10
LC331664
40-pin
3195-SOP40
450mil)
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2SK2767-01
Abstract: No abstract text available
Text: S P E C I DEVICE NAME : TYPE NAME : SPEC. No. : F 1 C A T I O N Powe r 2 S K 2 7 67 — 0 1 F u j i This S p e c if ic a t io n DATE DRAWN CHECKED NAME APPROVED MOS F ET E l e c t r i c Co., L t d is sub ject to change without notice. Fuji Electric Cajitd
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257-R-0Ã
2SK2767-01
TQ-220
EHTB30
2SK2767-01
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Untitled
Abstract: No abstract text available
Text: 32,768 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION PRELIMINARY The TC551632J is a 524,288 bits high speed static random access m emory organized as 32,768 words by 16 b its u sing CMOS technology, and operated from a single 5-volt supply. T oshiba's CMOS technology and advanced circuit form provide high speed feature.
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TC551632J
TC55163
C-103
TC551632Jâ
TC551632J-25,
TC551632J-35
SOJ40
P-40Q
46MAX
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