2SA1298
Abstract: 2SC3265
Text: TO SH IBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS 2 .5 0.5 0.3 + - + High DC Current Gain : hjpg (1) —100~320 Low Saturation Voltage : Vqe (sa^) = 0.4 V (Max.)
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2SC3265
2SA1298
2SA1298
2SC3265
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2SA1313
Abstract: 2SC3325
Text: TO SHIBA 2SA1313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 313 A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SW ITCHING APPLICATIONS • Excellent hEE Linearity : ^FE (2) —25 (Min.) at VqE = —6V, Iq = —400mA
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2SA1313
--400mA
--50V
2SC3325
2SA1313
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TRANSISTOR C307
Abstract: transistor c308
Text: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M
10kHz)
C-311
O-22QAB
C-312
0201G2
TRANSISTOR C307
transistor c308
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transistor C710
Abstract: C712 transistor diode C710 transistor C715 c714 C715 diode diode c716 c714 diode c710 LE C716
Text: bitemational ^Rectifier PD - 9.1112 IRGPC30UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c es = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGPC30UD2
C-715
O-247AC
C-716
transistor C710
C712 transistor
diode C710
transistor C715
c714
C715 diode
diode c716
c714 diode
c710
LE C716
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transistor iqr
Abstract: No abstract text available
Text: PD -9.1690 International IO R Rectifier IRG4IBC30KD PREUMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating lOps @ 125°C, Vge = 15V
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IRG4IBC30KD
25kHz
O-220
T0-220
transistor iqr
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TRANSISTOR 2FE
Abstract: No abstract text available
Text: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC30U
O-247AC
TRANSISTOR 2FE
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c679 transistor
Abstract: G882 C679
Text: International [^R ectifier P D - 9.1075 IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC30K
O-247AC
c679 transistor
G882
C679
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Untitled
Abstract: No abstract text available
Text: P D - 9.1586 International IOR Rectifier 4 30 S IRG PC PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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O-247AC
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
T0220AB
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2SC2714
Abstract: transistor C5D marking 9rb
Text: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR 2SC2714 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 FM, RF, MIX, IF AM PLIFIER APPLICATIONS. FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF (Typ.)
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2SC2714
100MHz)
SC-59
2SC2714
transistor C5D
marking 9rb
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YTS2906A
Abstract: YTS2221 150PPS
Text: SILICON PNP EPITAXIAL TYPE YTS2907A Unit in mm FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION, + 0.5 MID1UM-SPEED SW ITCHING A N D A U D IO TO VHF AMPLIFIER 2 .5 - a s APPLICATIONS. + Û 25 i.5 ~ a i5 HO +I tfc5 DC Current Gain Specified : —0.1~ —500mA
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YTS2907A
--500mA
--500mA,
--50mA
200MHz
YTS2221A,
YTS2222A.
O-236MOD
SC-59
YTS2906A
YTS2221
150PPS
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2SC2715
Abstract: No abstract text available
Text: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.
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2SC2715
SC-59
2SC2715
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Cbg MARKING TRANSISTOR
Abstract: TRANSISTOR CBG 2SA1312 2SC3324
Text: TOSHIBA 2SC3324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3324 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. High Voltage : V ç e O = 120V Excellent hpE Linearity hFE dC = 0.1mA) / hFE (IC = 2mA) = 0.95 (Typ.) High hpE
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2SC3324
2SA1312
Cbg MARKING TRANSISTOR
TRANSISTOR CBG
2SA1312
2SC3324
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transistor C636
Abstract: C636 IRGP430UD2 G633
Text: htemational P D - 9.1063 SR ectifier IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes ail "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGP430UD2
O-247AC
transistor C636
C636
IRGP430UD2
G633
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MG600Q2YS60A
Abstract: No abstract text available
Text: TO SH IBA MG600Q2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG600Q2YS60A HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT
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MG600Q2YS60A
2-126A1A
MG600Q2YS60A
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VQE 23F
Abstract: MG600Q2YS60A
Text: TO SH IBA MG600Q2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG600Q2YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT
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MG600Q2YS60A
2-126A1A
000707EAA1
MG600Q2YS60A~
VQE 23F
MG600Q2YS60A
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VQE 23F
Abstract: MG600Q2YS60A
Text: TO SH IBA MG600Q2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG600Q2YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT
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MG600Q2YS60A
2-126A1A
000707EAA1
MG600Q2YS60A~
VQE 23F
MG600Q2YS60A
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Untitled
Abstract: No abstract text available
Text: 2SA1362 SILICON PNP EPITAXIAL TYPE TRANSISTOR Unit in mm LO W FREQUENCY PO W ER AMPLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • High DC Current Gain : hpg = 120~400 Low Saturation Voltage : VcE sat = —0.2V (Max.) (Ic = -400mA, Ig = —8mA)
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2SA1362
-400mA,
--800mA
--400mA,
--10V,
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)
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2SC2712
150mA
2SA1162
-I-CL25
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marking CJD
Abstract: No abstract text available
Text: 2SC2712 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 2 7 12 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • + 0.5 2 .5 - t t 3 High Voltage and High Current : V0 EO = 5OV, 1(3 = 150mA (Max.) Excellent hpg Linearity
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2SC2712
150mA
2SA1162
961001EAA2'
marking CJD
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2712 Transistor Unit in mm Silicon NPN Epitaxial Type + 0.5 2 . 5 - 0.3 + 0.25 1 . 5 - 0.15 Audio Frequency General Purpose -M Amplifier, Driver Stage Applications Features • High Voltage and High Current - VCE0 = 50V Min. , Ic = 150mA (Max.)
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2SC2712
150mA
2SA1162
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2532 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r i R3 1 i Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE FOR LED LAMP APPLICATIONS. +0.5 TEMPERATURE COMPENSATION APPLICATIONS. 2 .5 -0 .3 +0.25 .1.5-0.15 • High hpE
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2SC2532
100mA)
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: 2SC5259 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) 1-0.5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5259
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)
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2SC3265
2SA1298
O-236MOD
SC-59CEO
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