C965 transistor
Abstract: transistor c965 transistor c964
Text: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV362MK
360Vdc,
C-970
C965 transistor
transistor c965
transistor c964
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C311 Transistor
Abstract: TRANSISTOR C309 transistor c308 c309 transistor
Text: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
IRGBC30M
C-311
TQ-220AB
C-312
C311 Transistor
TRANSISTOR C309
transistor c308
c309 transistor
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transistor c900
Abstract: transistor c904 transistor c903 c901 transistor transistor c902 C897 c898 TRANSISTOR C898 c902 C901
Text: International [TOR]Rectifier P D - 9.1105 IRGBC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features VcES = 600V • Short circuit rated -10ps @125°C, Vqe = 15V • Switching-loss rating includes all 'tail" losses
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-10ps
IRGBC20KD2
C-903
TQ-220AB
C-904
transistor c900
transistor c904
transistor c903
c901 transistor
transistor c902
C897
c898 TRANSISTOR
C898
c902
C901
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Untitled
Abstract: No abstract text available
Text: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M
10kHz)
TQ-220AB
5545E
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LE C346
Abstract: No abstract text available
Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M-S
10kHz)
SMD-220
C-346
4flS54S2
002013b
LE C346
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MG600Q1US41
Abstract: No abstract text available
Text: T O SH IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5^s Max. Low Saturation Voltage : VQE(sat) = 4.0V (Max.) Enh ancement-Mode
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MG600Q1US41
2-109E1A
MG600Q1US41
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Untitled
Abstract: No abstract text available
Text: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz
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IRGPC60M
10kHz)
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transistor C930
Abstract: transistor c929 transistor C935 C936 C933 transistor C930 e C930 transistor transistor c936 transistor C933 c929
Text: kitemational IOR¡Rectifier PD-9.1109A IRGPC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Ie Vces = 600V Short circuit rated -10ps @ 125°C, VQE = 15V Switching-loss rating includes all "tail" losses
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-10ps
IRGPC20KD2
C-935
O-247AC
C-936
transistor C930
transistor c929
transistor C935
C936
C933
transistor C930 e
C930 transistor
transistor c936
transistor C933
c929
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IRGBC36
Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Text: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00
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IRGBC20
IRGBC26
IRGBC30
IRGBC36
IRGBC40
IRGBC46
IRGPC40
IRGPC46
IRGPC50
IRGPC56
IRGBC36
IRGBC46
THOMSON 58E
02073
IRGPC56
IRGPC
THOMSON DISTRIBUTOR 58e d
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD1088 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2 S D 1 088 IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm çJ3.6 ± 0.2 ‘10.3MAX.“ / - High DC Current Gain : hpE = 2000 (Min.) (VqE = 2V, Iq = 2A)
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2SD1088
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MG300Q2YS40
Abstract: MG300Q2YS
Text: T O SH IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed • • • • EQUIVALENT CIRCUIT : tf=0.5/;s Max. trr = 0.5^s (Max.) : VQE(sat)“ 4*0V (Max.)
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MG300Q2YS40
2-109D2A
MG300Q2YS40
MG300Q2YS
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TRANSISTOR C307
Abstract: transistor c308
Text: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC30M
10kHz)
C-311
O-22QAB
C-312
0201G2
TRANSISTOR C307
transistor c308
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C1027
Abstract: transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor
Text: PD-9.1126A bitemational i ?]Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 1 0 js @ 125°C, V qe = 10V (5ps ® Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency (over 5kHz)
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IRGPH50K
C-1027
100CK
O-247AC
C-1028
C1027
transistor c1027
transistor c1026
c1027 transistor
C1026
c1023 transistor
C-1027
transistor c1027 same
transistor C1023
c1026 transistor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
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CM300DY-24H
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SD2129 2 S D 2 1 29 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 • High DC Current Gain : hp'E = 2000 (Min.) Low Saturation Voltage : Vqe (sat) = l-5V (Max.)
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2SD2129
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. U n it in mm 1S.8±0.5. 03.6±O.2 • • H ig h sp e e d • Low Satu ration Voltage : VQE say = 3.4V (Max. • 3-5 High Input Impedance
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GT40M101
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marking r2k
Abstract: MMST8598 IC marking R2k marking A32 MMST2907 R2B Marking G5B 500ma 40v pnp
Text: Transistors/Surface Mounting Type • SST3 Package/PNP Type Application Pre Amp Part No. B V c e o V ; Ic (mA @lc & Vqe f r (MHz) Cob (pF) Marking BC807-25 45 500 160 400 1 00 m A /1V 150 6 G5B B11 BC857A 45 100 110 230 2 m A /'5 V 250 4.5 G3E A32 Min. ^FE
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BC807-25
BC857A
BC857B
BC858B
BCW29
BCW30
BCW61B
BCW61C
BCW68F
BCW68G
marking r2k
MMST8598
IC marking R2k
marking A32
MMST2907 R2B
Marking G5B
500ma 40v pnp
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSH 10N60AU1 VCES IC25 IGBT with Diode "S" Series Improved SCSOA Capability vCE sat typ Symbol T est C o n d itio n s V CES Tj = 25°C to 150°C 600 V v CQR Td = 25°C to 150°C; RGE= 1 MQ 600 V V0ES Continuous ±20 V VQE„ Transient ±30 V 'c a s
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10N60AU1
O-247AD
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Untitled
Abstract: No abstract text available
Text: MCROPAC IN D U S T R IE S IN C 1 SE D • tllg tk O O O O O tn t S ■ „P I PHYSICAL DESCRIPTION OPTICAL/ELECTRICAL CHARACTERISTICS AT 25° C PARAMETER LIGHT CURRENT DARK CURRENT TEST CONDITION VQE “ 5 V * H = 9 m W /on’ t VCE = 30 V H=0 1C = IDOpA SYMBOL
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1000Q
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Untitled
Abstract: No abstract text available
Text: SILICON PN P T R IP LE D IFFUSED T Y P E 2 S B 1 4 H U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • & 3.2 ± 0.2 W - High DC Current Gain : hp>E = 1500 M in . (V q • 10±Q.3 e= - 3V, I c = - 1 A ) Low Saturation Voltage : VQE(say = —1.5V (Max.) ( I c = — 1A)
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2SB1411
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Untitled
Abstract: No abstract text available
Text: euoec BSM150GB120DN2E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type VbE Package O rdering Code BSM 150GB120DN2E3166 1200V 210A HALF-BRIDGE 2 C67076-A2112-A70
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BSM150GB120DN2E3166
150GB120DN2E3166
Oct-27-1997
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter
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C67076-A2108-A70
Oct-21-1997
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VQE 11
Abstract: No abstract text available
Text: euoec F BSM 150 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GAL 120 DN2 VCE h 1200V 210A Package Ordering Code HALF BRIDGE GAL 2 C67076-A2013-A70
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C67076-A2013-A70
Nov-24-1997
BSM150GAL120DN2
BSM150GAR120DN2
Sep-21-98
VQE 11
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A4200
Abstract: bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304
Text: I ! SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type l^CE h 1000V 35A BUP 304 Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2
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O-218
Q67078-A4200-A2
6E35b05
S235b05
D0flS031
A4200
bup304
PS 307 5A
65027
C3523
BUP 307
Q67078-A4200-A2
BUP 304
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