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    VISHAY MODEL 122 Search Results

    VISHAY MODEL 122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28617VY100EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY10EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY25EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    TPS6508700RSKR Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments
    TPS6508700RSKT Texas Instruments PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 Visit Texas Instruments Buy

    VISHAY MODEL 122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIR172DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR172DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


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    PDF SiR172DP 18-Jul-08

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    Abstract: No abstract text available
    Text: SPICE Device Model SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF SiS472DN 18-Jul-08

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    Abstract: No abstract text available
    Text: SPICE Device Model SiJ484DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF SiJ484DP 18-Jul-08

    Si7615DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7615DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si7615DN 18-Jul-08

    A3941

    Abstract: 99A28
    Text: SPICE Device Model Si5414DC Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si5414DC 18-Jul-08 A3941 99A28

    Si4564DY

    Abstract: si4564
    Text: SPICE Device Model Si4564DY Vishay Siliconix N-Channel and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


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    PDF Si4564DY 18-Jul-08 si4564

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    Abstract: No abstract text available
    Text: SPICE Device Model Si4455DY www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si4455DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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    Abstract: No abstract text available
    Text: SPICE Device Model Si7615DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si7615DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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    Abstract: No abstract text available
    Text: SPICE Device Model Si7114ADN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si7114ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI7615A

    Abstract: SI7615ADN
    Text: SPICE Device Model Si7615ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si7615ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI7615A

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    Abstract: No abstract text available
    Text: SPICE Device Model SiR880ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    PDF SiR880ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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    Abstract: No abstract text available
    Text: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si8497DB 11-Mar-11

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    Abstract: No abstract text available
    Text: SPICE Device Model Si4124DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si4124DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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    Abstract: No abstract text available
    Text: SPICE Device Model Si8497DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si8497DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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    Abstract: No abstract text available
    Text: SPICE Device Model SQM47N10-24L Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF SQM47N10-24L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

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    Abstract: No abstract text available
    Text: SPICE Device Model SQM100N10-10 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF SQM100N10-10 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4340CDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4340CDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si4340CDY 18-Jul-08

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    Abstract: No abstract text available
    Text: 6 www.vishay.com Vishay Spectrol Snap-On Panel Mount Adapters Vishay Spectrol’s standard 3/4" and 1 - 1/4" rectangular trimming potentiometers, the Models 43 and 70, may be easily panel mounted through the use of Vishay Spectrol Model 6 panel mount adapters. The adapters are designed


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    PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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    Abstract: No abstract text available
    Text: Model Numbers VISHAY Precision Potentiometers Single Turn . . . . , . . . , . . . , . . . . . . .


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    Abstract: No abstract text available
    Text: V1SHAY Numerical Index Vishay Spectrol MODEL NUMBER. PAGE NO MODEL NUMBER. PAGE NO 3 H . 10 159. 62


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    S221

    Abstract: No abstract text available
    Text: DATA SHEET VMF-300 A Bulk Metal Foil Established Reliability Resistors Military Specification MIL-R-122 C O M P A N Y O F VISHAY FOIL RESISTORS ▼ Vishay Model S22-1 U.S. Military Designation M122/1 VISHS006 The VISHAY S22-1 M122/1 is qualified to the reliability


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    PDF VMF-300 MIL-R-122 S22-1 M122/1 VISHS006 S22-1 M122/1) 50Ki2 X1000) S221

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    Abstract: No abstract text available
    Text: Model 122 VISHAY Vishay Spectral 1/16” 26.9mm Single Turn Wirewound Precision Potentiometer FEATURES • 1 - 1/16” Round • Bushing Mount, Single Section • Servo Mount, Two Section • 5 to 20K ELECTRICAL SPECIFICATIONS PARAMETER STANDARD SPECIAL


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    PDF 20-Nov-01

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    Abstract: No abstract text available
    Text: VISHAY _ Model 132,138,139 Vishay Spectral 1-5/16” 33.3mm Low Cost Industrial Single Turn Wirewound, Conductive Plastic, Cermet FEATURES • • • • Choice of Three Elements for Broad Resistance Range Center Tap Available


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    PDF MIL-PRF-12934/MIL-PRF-39023 MILR-12934: MIL-R-39023 19-Jun-01

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    Abstract: No abstract text available
    Text: Model IMS-2_ Vishay Dale VISHAY Inductors Military, MIL-C-15305 Qualified, Type LT and Commercial, Molded, Shielded, Miniature FEATURES • • • • • Flame retardant coating. Electromagnetic shield. Small package for a shielded inductor.


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    PDF MIL-C-15305 MIL-STD-202, MIL-C-15305 MS21426 30-Apr-99