sanyo oscon
Abstract: sanyo os-con 0805ZC105MAT1A CT1300 5aSOT23
Text: ZXRD1000 SERIES PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC Low Cost DESCRIPTION ZXRD1000 series can be used with all N channel devices or a combination of N & P channel devices. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
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ZXRD1000
sanyo oscon
sanyo os-con
0805ZC105MAT1A
CT1300
5aSOT23
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M4306N
Abstract: M4306 ZDM4306
Text: SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS D1 L J Di L _ L ZDM4306N - ISSUE 1 - NOVEMBER 1995 Gì = ° s , D2 I I I I g2 Dz I I I I s? PARTMARKING DETAIL - M4306N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage
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ZDM4306N
M4306N
Vgs20V
M4306N
M4306
ZDM4306
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • MflSSMSE 1^3 ■ INR Bulletin E27108 International S Rectifier IRFK4HC50,IRFK4JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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E27108
IRFK4HC50
IRFK4JC50
E78996.
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500
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FRL430
2N7281D,
2N7281R
2N7281H
100KRAD
300KRAD
1000KRAD
3000KRAD
004S703
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U22 2.5A 250V
Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
U22 2.5A 250V
P1028
K1502
FSP400
BFX82
2N3379
C621
MT101B
TIX882
c644
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A2103
Abstract: No abstract text available
Text: 2SK1017-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee
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2SK1017-01
ES7H30
A2103
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Untitled
Abstract: No abstract text available
Text: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CASE T O-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT F R E QUENCY UP TO 450MHz. • THE DEVICE IS ALSO
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2N3823
450MHz.
100mV
es15V
f-100Hz
-25oC
S320/2\
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2n2709
Abstract: C621 2N4411 c643 OC44 400M BSV55AP BSV55P T072 GM300
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
2n2709
C621
2N4411
c643
OC44
400M
BSV55AP
BSV55P
T072
GM300
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A2118
Abstract: 2sk mosfet k1081
Text: 2SK1081-01 FUJI POWER MOS-FET N - C H A N N E L S IL IC O N P O W E R M O S - F E T p j j g £ p | £ g • Outline Drawings ■ features • High speed switching • Law on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee
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2SK1081-01
A2118
2sk mosfet
k1081
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package
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43D2271
FRK150
2N7291D,
2N7291R
2N7291H
T0-204AE
100KRAD
300KRAD
1000KRAD
3000KHAD
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L44A
Abstract: L-44a
Text: SSF70N10A Advanced Power MOSFET FEATURES BV0SS = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ Lower Leakage Current : 10 uA M ax @ VOS= 100V
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SSF70N10A
SSF70N1
SSF70N1OA
L44A
L-44a
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE FK20UM-5 • VDSS . 250V • rDS ON (MAX) . 0 .2 4 Î2 • Id . 20A
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FK20UM-5
150ns
1503C
571CH23
571CK
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C621
Abstract: SD5013 2N551 transistor c640 npn Transistors 2n551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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18200T
Abstract: germanium low power 150mW 460MSA 2N2097A C621 LM 18200T P1004 RT1116 2SC814 transistor C633
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
TIX882
18200T
germanium low power 150mW
460MSA
2N2097A
C621
LM 18200T
P1004
RT1116
2SC814
transistor C633
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OM9332SC
Abstract: OM9333SC OM9334SC OM9335SC OM9336SC OM9337SC OM9339SC OM9340SC
Text: O M N I R E L CORP 14E 1^70=1073 0 0 0 0 4 5 5 'S 3 O M 93 32 S C O M 9334S C O M 9336S C O M 9338§fc IL O M 9340S C O M 93 33 S C O M 9335S C O M 9337S C O M 9339S C QUAD POWER MOSFETS 'i 'T - Z P t - Z X Uncommitted and Isolated Quad MOSFETs FEATURES •
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OM9332SC
OM9334SC
OM9336SC
OM9338Sfc
OM9340SC
OM9333SC
OM9335SC
OM9337SC
OM9339SC
16-pin
OM9339SC
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FRK250
Abstract: No abstract text available
Text: H A RR IS S E M I C O N D S E CT OR 5ÔE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H • 4 3 G2 27 1 G D 4 5 7 3 3 37T H H A S 2N7293D, 2N7293R 2N7293H Radiation Hardened N-Channel Power MOSFETs December 1992
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FRK250
2N7293D,
2N7293R
2N7293H
O-204AE
100KRAD
300KRAD
1000KRAD
2N7293R,
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19500 TRANSISTOR 50A
Abstract: No abstract text available
Text: HARRIS SENICONÏ SECTOR 5ÖE D fX H A R R I S • M3DSE71 DD457S7 BG3 « H A S 2N7299D, 2N7299R 2N7299H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK160 D, R, H) December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 50A, 100V, RD6(on) - 0.040Q
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M3DSE71
DD457S7
2N7299D,
2N7299R
FRK160
2N7299H
i00KRAD
300KRAD
1000KRAD
3000KRAD
19500 TRANSISTOR 50A
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2N3823 equivalent
Abstract: 2N3823
Text: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR , ï 1 e I nwfi t f CASE TO-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT FRE QUENCY UP TO 450MHz. •THE DEVICE IS ALSO
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2N3823
2N3823
450MHz.
to-72
500mW
S320/2\5
2N3823 equivalent
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Untitled
Abstract: No abstract text available
Text: bSE , - J ^ R F M S "HAS 2N7322D, 2N7322R æ S E M I C O N D U C T O R O HARRIS SEMICOND SECTOR REGISTRATION PENDING Currently Available as FRK9150 D, R, H ju n « 1993 A lT O ¿TIV# O O L f iÎà d à itl Radiation Hardened P-Channel Power MOSFETs Package
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2N7322D,
2N7322R
FRK9150
-100V,
T0-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
T0-204AE
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Untitled
Abstract: No abstract text available
Text: bSE f f CH} l S S i s SEMICONDUCTOR " " N 2 7 2 7 D , HARRIS SEMICOND SECTOR REGISTRATION PENDING Currently Available as FRS234 D, R, H 2 N 7 2 7 9 R 2 N 7 2 7 9 H Radiation Hardened N-Channel Power MOSFETs June1993 Package Features • 9 5A.250V, RDS(on)-0.715Q
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FRS234
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-257AA
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2SK19Y
Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
THP172
TIS11
TIX690
Pc-50mW;
BVCBO-50V
BVGSS-30V
Yfs-800umhos
500mW;
TIX881
2SK19Y
C682
2SK19GR
X70a
FSP400
40468
C621
K1202
C682A
C684
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FE252
Abstract: 2N2886 FZJ 131 fzj 165 TIX882 2N2180 2N5425 2SC111 2SC114 transistor BF140
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ior e78996
Abstract: irfk4h450 E78996 ior E78996
Text: INTERNATIONAL RECTIFIER b5E J> WÊ 4 0 5 5 45 2 OOlt.207 «l^T • INR Bulletin E2710/ International Rectifier IRFK4H450,IRFK4J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • ■ • • High Current Capability. UL recognised E78996.
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E2710/
IRFK4H450
IRFK4J450
E78996.
O-240
ior e78996
E78996 ior
E78996
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FIL-3C
Abstract: to-92 mosfet 13T13
Text: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low
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T0257AB
SM8F13*
SM8F33*
SM8F23*
SM8F43*
T0258AA
FT0258AA
HDS100
FIL-3C
to-92 mosfet 13T13
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