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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance	OCR Scan	PDF	F9012 VGS12V 1110AvenidaAcaso, 72mOCH D0D0273
Untitled Abstract: No abstract text available Text: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects	OCR Scan	PDF	FSL9110D, FSL9110R -100V, 36MeV/mg/cm2 1-800-4-HARRIS
250JIS Abstract: No abstract text available Text: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs	OCR Scan	PDF	FSF254D, FSF254R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; 250JIS
Untitled Abstract: No abstract text available Text: a h a r r is S E M I C O N D U C T O R FSF150D, FSF150R " " m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 25A Note 1 , 100V, rDS(ON) = 0.070H • Total Dose - • Single Event - • Dose Rate TO-254AA Meets Pre-Rad Specifications to 100kRAD(Si)	OCR Scan	PDF	FSF150D, FSF150R O-254AA 100kRAD 36MeV/mg/cm2 1-800-4-HARRIS
Untitled Abstract: No abstract text available Text: polyfet rf devices F2021 PATENTED GOLD METALIZED General Description pp p a c k a g e : Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"* process features gold metal for greatly extended	OCR Scan	PDF	F2021 VGS12V