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IDEC Corporation LB3L-M1T14VG-ENGRAVED LB 16MM ILLUMINATED PB SPDT G
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DigiKey	LB3L-M1T14VG-ENGRAVED	Bulk			10	1 - 10 $49.255 100 $49.255 1000 $49.255 10000 $49.255	Buy Now
Mouser Electronics	LB3L-M1T14VG-ENGRAVED					1 $50.5 10 $43.81 100 $42.7 1000 $42.7 10000 $42.7	Get Quote
Master Electronics	LB3L-M1T14VG-ENGRAVED					1 $44.91 10 $38.88 100 $34.73 1000 $34.21 10000 $34.21	Buy Now
Sager	LB3L-M1T14VG-ENGRAVED				1	1 $30.03 10 $27.72 100 $25.03 1000 $25.03 10000 $25.03	Buy Now
IDEC Corporation LW2L-M1C10V-G-ENGRAVED LW ILL SQ PB DPDT ENGRAVED
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DigiKey	LW2L-M1C10V-G-ENGRAVED	Bulk			10	1 - 10 $54.726 100 $54.726 1000 $54.726 10000 $54.726	Buy Now
Mouser Electronics	LW2L-M1C10V-G-ENGRAVED					1 $45.41 10 $45.41 100 $45.41 1000 $45.41 10000 $45.41	Get Quote
RS	LW2L-M1C10V-G-ENGRAVED	Bulk			10	1 - 10 $48.91 100 $48.91 1000 $48.91 10000 $48.91	Get Quote
Master Electronics	LW2L-M1C10V-G-ENGRAVED					1 $50.43 10 $43.66 100 $39 1000 $38.41 10000 $38.41	Buy Now
Sager	LW2L-M1C10V-G-ENGRAVED				1	1 $39.65 10 $36.6 100 $33.05 1000 $33.05 10000 $33.05	Buy Now
IDEC Corporation HA2L-M1C24V-G-ENGRAVED ILL PUSHBUTTON MOMENTARY DPDT
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DigiKey	HA2L-M1C24V-G-ENGRAVED	Bulk			10	1 - 10 $59.114 100 $59.114 1000 $59.114 10000 $59.114	Buy Now
Mouser Electronics	HA2L-M1C24V-G-ENGRAVED					1 $60.77 10 $54.51 100 $50.93 1000 $50.93 10000 $50.93	Get Quote
Master Electronics	HA2L-M1C24V-G-ENGRAVED					1 $54.9 10 $47.52 100 $42.45 1000 $41.82 10000 $41.82	Buy Now
Sager	HA2L-M1C24V-G-ENGRAVED				1	1 $40.3 10 $37.19 100 $33.58 1000 $33.58 10000 $33.58	Buy Now
IDEC Corporation LW2B-M1C1LV-G-ENGRAVED Pushbutton Switches LW PB Mom Non-ILL Sqr Gld Cntc
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Mouser Electronics	LW2B-M1C1LV-G-ENGRAVED					1 $51.65 10 $43.2 100 $37.74 1000 $37.74 10000 $37.74	Get Quote
Master Electronics	LW2B-M1C1LV-G-ENGRAVED					1 $46.65 10 $40.39 100 $36.08 1000 $35.54 10000 $35.54	Buy Now
Sager	LW2B-M1C1LV-G-ENGRAVED				1	1 $35.68 10 $32.94 100 $29.74 1000 $29.74 10000 $29.74	Buy Now
CTS Corporation 138VGENS10M000 OSCILLATOR OCXO
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Richardson RFPD	138VGENS10M000				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

VGEN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nf 820 Abstract: marking 4ur smd marking KH chip Capacitors 100 nf capacitor 680 / 250v smd marking KE V350 smd marking LG capacitor 22uF 250V SMD AVX smd film capacitors CF Text: BW 15: Tip & Ring 15 Radial Leads — 250 VGENERAL DESCRIPTION Non inductive, stacked, self healing, metallized polyester film capacitor. Insulated thermoplastic casing, polyurethane resin sealed. Radial connections. Also available in SMD version. see below	Original	PDF	384-1/CPRIMARY 200ms/div nf 820 marking 4ur smd marking KH chip Capacitors 100 nf capacitor 680 / 250v smd marking KE V350 smd marking LG capacitor 22uF 250V SMD AVX smd film capacitors CF
low voltage function generator Abstract: Function GENERATOR "function generator" Text: Application Hint 75 Low Current Load Transient Testing VgenHI = − 50Ω x IOUTMin + VOUT Introduction By utilizing the function generators 50 Ohm source and its ability to sink and source currents at high speeds, high speed load transients can be observed on low power	Original	PDF	M9999-092506 low voltage function generator Function GENERATOR "function generator"
MARKING PA TR SOT-23 Abstract: ultra low igss pA Text: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	PDF	TSM3408 OT-23 TSM3408CX MARKING PA TR SOT-23 ultra low igss pA
DIODE B12 Abstract: No abstract text available Text: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●	Original	PDF	TSM4416D TSM4416DCS DIODE B12
A07 mosfet Abstract: Dual p-Channel MOSFET SOP8 P-Channel MOSFET code 1A P-CHANNEL Dual N & P-Channel Dual P-Channel MOSFET 30v Dual N & P-Channel MOSFET Dual N Text: TSM4544D 30V Dual N & P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 5. Drain 2. Gate 1 6. Drain 3. Source 2 7. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V 1 1 2 2 N-Channel 30 P-Channel -30 Features RDS(on)(mΩ) ID (A) 30 @ VGS = 10V 7 44 @ VGS = 4.5V	Original	PDF	TSM4544D TSM4544DCS A07 mosfet Dual p-Channel MOSFET SOP8 P-Channel MOSFET code 1A P-CHANNEL Dual N & P-Channel Dual P-Channel MOSFET 30v Dual N & P-Channel MOSFET Dual N
6968e Abstract: TF6968E D002P 65a3 Text: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9 P RDS(ON), VGS # 9 P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications	Original	PDF	TF6968E 6968E FIG10-Maximum FIG11- 100ms 6968e TF6968E D002P 65a3
TSM3458 Abstract: sot26 pa N-Channel mosfet sot-26 Text: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●	Original	PDF	TSM3458 OT-26 TSM3458CX6 TSM3458 sot26 pa N-Channel mosfet sot-26
mosfet 0835 Abstract: TSM05N03 Text: TSM05N03 Preliminary 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	PDF	TSM05N03 OT-223 TSM05N03CW mosfet 0835 TSM05N03
mosfet to92 Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●	Original	PDF	TSM2N7000K TSM2N7000KCT mosfet to92 mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92
Untitled Abstract: No abstract text available Text: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology	Original	PDF	TSM9435 TSM9435CS
Untitled Abstract: No abstract text available Text: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	PDF	TSM2312 OT-23 TSM2312CX
TSM10N06 Abstract: No abstract text available Text: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	PDF	TSM10N06 O-252 TSM10N06CP TSM10N06
TSM2307CX Abstract: TSM2307CXRFG TSM2307 MARKING PA TR SOT-23 A1 SOT-23 MOSFET P-CHANNEL Text: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 95 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	PDF	TSM2307 OT-23 TSM2307CX OT-23 TSM2307CXRFG TSM2307 MARKING PA TR SOT-23 A1 SOT-23 MOSFET P-CHANNEL
MOSFET SOT-23 marking code M2 Abstract: No abstract text available Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2

Vishay DaTE CODE tsop-6 Abstract: si3410 Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si3410DV 2002/95/EC Si3410DV-T1-E3 Si3410DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE tsop-6 si3410
Untitled Abstract: No abstract text available Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
s8058 Abstract: No abstract text available Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance	Original	PDF	Si7120DN Si7120DN-T1-E3 Si7120DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8058
5302D Abstract: No abstract text available Text: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make	Original	PDF	DG428, DG429 DG429 DG428 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 5302D
SI4431CDY Abstract: No abstract text available Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SUD50NP04-77P Abstract: TO-252-4L 74439 complementary MOSFET TO252 Text: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V	Original	PDF	SUD50NP04-77P O-252-4L SUD50NP04-77P-T4-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUD50NP04-77P TO-252-4L 74439 complementary MOSFET TO252
Untitled Abstract: No abstract text available Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC	Original	PDF	Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive	Original	PDF	Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
DA 2688 Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688 Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055	OCR Scan	PDF	TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Untitled Abstract: No abstract text available Text: IN STR t5 -COPTO} DlfJû'ifcilTSb 8961726 TEXAS INSTR COPTO 0G37D27 . 62C 37027 7"-33-/3 TIPL753, TIPL753A N-P-N SILICON POWER TRANSISTORS 1982 - REVISED OCTOBER 1984	OCR Scan	PDF	0G37D27 TIPL753, TIPL753A TIPL753 TIPL753A 0037Q3M

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IDEC Corporation LB3L-M1T14VG-ENGRAVED

IDEC Corporation LW2L-M1C10V-G-ENGRAVED

IDEC Corporation HA2L-M1C24V-G-ENGRAVED

IDEC Corporation LW2B-M1C1LV-G-ENGRAVED

CTS Corporation 138VGENS10M000

VGEN Datasheets Context Search

nf 820

low voltage function generator

MARKING PA TR SOT-23

DIODE B12

A07 mosfet

6968e

TSM3458

mosfet 0835

mosfet to92

Untitled

Untitled

TSM10N06

TSM2307CX

MOSFET SOT-23 marking code M2

Vishay DaTE CODE tsop-6

Untitled

s8058

5302D

SI4431CDY

SUD50NP04-77P

Untitled

Untitled

DA 2688

Untitled