Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1822A VEC2616 Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8 Features • • • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET
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ENA1822A
VEC2616
PW10s,
900mm2
A1822-9/9
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8254A SBS811 Schottky Barrier Diode http://onsemi.com 30V, 2A, Low VF, Non-Monolithic Dual VEC8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • Small Switching noise
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EN8254A
SBS811
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0666A TND323VD Excellent Power Device http://onsemi.com Inverter and buffer driver for general purpose, Dual VEC8 Features • • • • • • • • Inverter buffer Monolithic structure High voltage CMOS process adopted Withstand voltage of 25V is assured
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ENA0666A
TND323VD
1000pF
A0666-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8699A VEC2315 P-Channel Power MOSFET http://onsemi.com –60V, –2.5A, 137mΩ, Dual VEC8 Features • • • • • ON-resistance RDS on 1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications
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EN8699A
VEC2315
900mm2Ã
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8966A SBE812 Schottky Barrier Diode http://onsemi.com 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise
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EN8966A
SBE812
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8967A SBE813 Schottky Barrier Diode http://onsemi.com 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise
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EN8967A
SBE813
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN9053 TND524VS Excellent Power Device http://onsemi.com Single-phase High Side Drive, Single VEC8 Features • • • • Single-phase high side drive Allows simplified configuration of driver circuit Fully compatible input to LSTTL/CMOS
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EN9053
TND524VS
170mA
340mA
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0520A TND322VD Excellent Power Device http://onsemi.com Dual buffer driver for general purpose, Dual VEC8 Features • • • • • • • • Dual buffer Monolithic structure High voltage CMOS process adopted Withstand voltage of 25V is assured
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ENA0520A
TND322VD
1000pF
A0520-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1713A VEC2415 N-Channel Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, Dual VEC8 Features • • • • • Low ON-resistance Composite type facilitating high-density mounting 4V drive Mounting high 0.75mm Protection diode in Specifications
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ENA1713A
VEC2415
PW10s,
900mm2
A1713-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0190A TND321VD Excellent Power Device Dual inverter driver for general purpose, Dual VEC8 http://onsemi.com Features • • • • • • • • Dual inverter Monolithic structure High voltage CMOS process adopted Withstand voltage of 25V is assured
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ENA0190A
TND321VD
1000pF
A0190-8/8
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Untitled
Abstract: No abstract text available
Text: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.
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VEC2611
ENA0425
VEC2611
900mm2â
VEC2611/D
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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Untitled
Abstract: No abstract text available
Text: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
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VEC2813
ENA0384
A0384-6/6
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91C630FG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. Especially, take care below cautions.
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16-Bit
TLCS-900/L1
TMP91C630FG
TMP91C630
TMP91C630
100-pin
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Untitled
Abstract: No abstract text available
Text: TND524VS Ordering number : EN9053 SANYO Semiconductors DATA SHEET TND524VS ExPD Excellent Power Device Single-phase High Side Drive Application Features • • • • Single-phase high side drive Allows simplified configuration of driver circuit Fully compatible input to LSTTL/CMOS
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EN9053
TND524VS
170mA
340mA
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Untitled
Abstract: No abstract text available
Text: SBS811 Ordering number : ENN8254 SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Small Switching noise. Low forward voltage (IF=2A, VF max=0.40V).
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ENN8254
SBS811
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vec8
Abstract: No abstract text available
Text: SBS811 Ordering number : EN8254A SANYO Semiconductors DATA SHEET SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Small Switching noise Low forward voltage (IF=2A, VF max=0.40V)
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EN8254A
SBS811
vec8
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diode sy 710
Abstract: VEC2813 N1407
Text: VEC2813 Ordering number : ENA0384B SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
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VEC2813
ENA0384B
A0384-6/6
diode sy 710
VEC2813
N1407
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VEC2811
Abstract: 82871
Text: VEC2811 Ordering number : ENN8287 VEC2811 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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VEC2811
ENN8287
VEC2811
82871
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date code Sanyo semiconductor
Abstract: Sanyo date code
Text: OUTLI NE DRAWING Measure 20/ 1 NTS Mass (g) 0. 015 »For r e f e r e n c e (1 1 ’i'*' ' I u- ' H 05 0 - 0.02 SANYO P a c k a g e Code JEDEC P a c k a g e Code JE I TA P a c k a g e Code VEC8 Dr awn Checked D r a w i n g No. E n a c t No. SANYO S e m i c o n d u c t o r C o . , L t d .
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TIL78
Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Text: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE
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TIL78
Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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TIL78
Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
SA2739
phototransistor OCP71
cm601
JAN2N491
photo transistor til78
til78 phototransistor
CM602
FPN100
ft06
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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NPN110.
fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
TIL78
photo transistor til78
K1202
phototransistor OCP71
photo TIL78
til78 phototransistor
2n318
2SK19GR
2SK19Y
C682A
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