F2683
Abstract: No abstract text available
Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
|
OCR Scan
|
PDF
|
TF-26836
ATF-26836
5965-8704E
44475A4
DD1771Ö
F2683
|
Untitled
Abstract: No abstract text available
Text: fX J !« H EW L E T T wLt M PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features Description • C ascadable 50 Q Gain B lock The MSA-0786 is a high perfor m ance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,
|
OCR Scan
|
PDF
|
MSA-0786
MSA-0786
|
Untitled
Abstract: No abstract text available
Text: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz
|
OCR Scan
|
PDF
|
AT-41486
vailable111
AT41486
5965-8928E
5968-2031E
|
Untitled
Abstract: No abstract text available
Text: W hnì HEW LETT m L'fià P A C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13336 Features D escription • Low N oise Figure: 1.4 dB Typical at 12 GHz The ATF-13336 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
|
OCR Scan
|
PDF
|
ATF-13336
ATF-13336
44475A4
0D17baS
|
P 1060 atf
Abstract: No abstract text available
Text: W hat H E W L E T T * mLliM P A C K A R D 0 .5 -6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 F e atu re s D escription • Low N oise Figure: 0.5 dBTyp. @ 2 GHz • High Output Pow er: 19 dBmTyp. PldB @ 2 GHz • High MSG: 13.5 dBTyp. @ 2 GHz
|
OCR Scan
|
PDF
|
ATF-21186
ATF-21186
mic162
Rn/50
ATF-21186-TR1
ATF-21186-STR
P 1060 atf
|
Untitled
Abstract: No abstract text available
Text: f X ^ I H EW LET T wLrM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0286 Features Description • C ascadable 50 Q Gain B lock The MSA-0286 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,
|
OCR Scan
|
PDF
|
MSA-0286
MSA-0286
|
ATF-13736
Abstract: No abstract text available
Text: Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low N oise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high perfor m ance gallium arsenide Schottkybarrier-gate field effect transistor
|
OCR Scan
|
PDF
|
ATF-13736
ATF-13736
5965-8722E
|
Untitled
Abstract: No abstract text available
Text: W TM H E W L E T T WL'Em P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features D escription • Cascadable 50 Q Gain Block The MSA-0486 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,
|
OCR Scan
|
PDF
|
MSA-0486
MSA-0486
vailabl60
44475AM
5965-9578E
|
Untitled
Abstract: No abstract text available
Text: T hal H E W L E T T mHiiM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 F eatures D escription • Broadband, Minimum Ripple Cascadable 50 Q Gain Block The MSA-0986 is a high perfor m ance silicon bipolar M onolithic M icrowave Integrated Circuit
|
OCR Scan
|
PDF
|
MSA-0986
MSA-0986
vailable11
5965-9552E
|
AT42086-BLK
Abstract: No abstract text available
Text: What H E W L E T T * mLliM P A C K A R D Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 13.5dBTypicaIGldBat2.0 GHz • Low N oise Figure:
|
OCR Scan
|
PDF
|
AT-42086
AT-42086
Rn/50
AT42086-BLK
|
Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz
|
OCR Scan
|
PDF
|
AT-41486
AT-41486
Rn/50
|
Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0986 Features Description • Broadband, Minimum Ripple Cascadable 50 Q. Gain Block The MSA-0986 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit
|
OCR Scan
|
PDF
|
MSA-0986
MSA-0986
|
ST Z0 103 MA
Abstract: No abstract text available
Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging
|
OCR Scan
|
PDF
|
ATF-26884
ATF-26884
ST Z0 103 MA
|
41411
Abstract: transistor 41 74t transistor 45 f 122
Text: Thal h e w le tt mL'fiÆ PACKARD « Surface M ount Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz
|
OCR Scan
|
PDF
|
AT-41411
AT-41411
OT-143
Rn/50
0017b2fl
41411
transistor 41 74t
transistor 45 f 122
|
|
|
AT-310
Abstract: AT-31011 AT-31033 SAI SOT23
Text: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar
|
OCR Scan
|
PDF
|
AT-31011
AT-31033
AT-31011:
AT-31033:
OT-143
OT-143
AT-31011)
OT-23
AT-31033)
AT-310
SAI SOT23
|
Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
|
OCR Scan
|
PDF
|
ATF-26836
ATF-26836
sy-25
|
sot303
Abstract: No abstract text available
Text: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,
|
OCR Scan
|
PDF
|
AT-32063
OT-363
vailable111
OT-363
5665-1234E
sot303
|
Untitled
Abstract: No abstract text available
Text: Who HEW LAR ETDT mL'fiIM PACK Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32063 F eatures Description • High Perform ance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high
|
OCR Scan
|
PDF
|
AT-32063
OT-363
AT-32063
OT-363
5965-1234E
5965-8921E
4447SA4
|
Untitled
Abstract: No abstract text available
Text: f T C f HEW LETT K“KM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0486 Features Description • C ascadable 50 Q Gain B lock The MSA-0486 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,
|
OCR Scan
|
PDF
|
MSA-0486
MSA-0486
|
MSA0986-BLK
Abstract: No abstract text available
Text: r /RiH E W L E T T m LiLm P a c k a r d Cascadable Silicon Bipolar MMIC A m plifier Technical Data MSA-0986 Features Description • B roadband, Minimum Ripple Cascadable 50 Q Gain Block T he MSA-0986 is a high p e rfo r m ance silicon b ip o la r M onolithic
|
OCR Scan
|
PDF
|
MSA-0986
MSA-0986
MSA0986-BLK
|