marking code V64
Abstract: marking code V72 MARKING V84
Text: DZ23-V-G Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common cathode 3 1 2 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %. Replace “C”
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DZ23-V-G
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
marking code V64
marking code V72
MARKING V84
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marking code V64
Abstract: sot v65 DZ23B43-V V97 marking DZ23B2V7-V sot23 marking v65
Text: DZ23-V-G Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common cathode 3 1 2 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %. Replace “C”
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PDF
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DZ23-V-G
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
marking code V64
sot v65
DZ23B43-V
V97 marking
DZ23B2V7-V
sot23 marking v65
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74LVC1G97GW
Abstract: 74LVC1G97
Text: 74LVC1G97 Low-power configurable multiple function gate Rev. 1 — 21 December 2010 Product data sheet 1. General description The 74LVC1G97 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND,
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74LVC1G97
74LVC1G97
74LVC1G97GW
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74LVC1G97GW
Abstract: V97 marking
Text: 74LVC1G97 Low-power configurable multiple function gate Rev. 2 — 9 March 2011 Product data sheet 1. General description The 74LVC1G97 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND,
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74LVC1G97
74LVC1G97
74LVC1G97GW
V97 marking
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MT28F002C1
Abstract: No abstract text available
Text: i l l Z R O ;' S-Or>TIMIZED M A .S H ill E M O R Y MT28F200C1 MT28F002C1 FLASH MEMORY FEATURES P IN • Five erase blocks: 16KB/8K-word boot block protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB) • Top boot block organization
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16KB/8K-word
128KB)
MT28F200C1
MT28F002C1
16-bit
MT28F002C1.
MT28F002C1
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DIODE F7 SMD
Abstract: smd diode schottky code marking 2F Diode smd code sm
Text: P D -9 .1 6 4 8 International IQR Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low Vp Schottky Rectifier Generation V Technology Micro8 Footprint VDSS = -20V RDS on = 0 .2 7 Q
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IRF7524D1
Rf7524d1
DIODE F7 SMD
smd diode schottky code marking 2F
Diode smd code sm
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Untitled
Abstract: No abstract text available
Text: A s p AUSTIN SEMICONDUCTOR. INC. SRAM MT5C2565 883C 64K X 4 SRAM 64K X 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 FEATURES • • • • • Ultra high speed 12,15ns High-speed: 20, 25, 35 and 45ns
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MT5C2565
MIL-STD-883
QQ2117
DS000026
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Micron CMOS 1987
Abstract: No abstract text available
Text: ADVANCE 2 M EG x 8 MEMORY' MT28F016S3 FLASH MEMORY 3V Only, Dual Supply • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: lOfiA MAX 3V-only, dual-supply operation: 2.7V to 3.6V Vcc 2.7V to 3.6V or 5V ±10% Vpp
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110ns
MT28F016S3
40-Pin
Micron CMOS 1987
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58LC128
Abstract: V97 marking
Text: ADVANCE |U |IO = IO N 128K M T58LC128K32/36E1 32/36 S Y N C B U R S T SRAM X SYNCHRONOUS 128K x 32/36 SRAM O Ö A l i It O tlA IV I +3-3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE Fast access tim es: 8.5, 9 ,1 0 and 11ns F ast O E# access tim e: 5ns
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T58LC128K32/36E1
MT58LC12BK32/36E1
58LC128
V97 marking
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MT4C1024
Abstract: MT4C1024-8
Text: ASO MT4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL
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PDF
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MT4C1024
MIL-STD-883
18-Pin
175mW
512-cycle
MT4C1024-8
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Untitled
Abstract: No abstract text available
Text: ADVANCE V / lir^ c a rn fS J I MT3LST3264(P , MT3LST6464(P) 32K/64K x 64 SYNCHRONOUS SRAM MODULES 32K/64K x 64 SRAM SYNCHRONOUS SRAM MODULE with Tag RAM 256KB/512KB, 3.3V, FLOW-THROUGH OR PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES PIN ASSIGNMENT (Front View)
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MT3LST3264
MT3LST6464
32K/64K
160-lead,
82430FX,
82430HX
82430VX
512KB
256KB/512KB,
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Untitled
Abstract: No abstract text available
Text: 1 MEG X 4 FPM DRAM ¡M I C R O N DRAM MT4C4001J FEATURES • 1,024-cycle refresh distributed across 16ms MT4C4001J or 128ms (MT4C4001J L) • Industry-standard pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
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024-cycle
MT4C4001J)
128ms
MT4C4001J
MT4C4001J
20/26-Pin
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smd ic marking HL
Abstract: MT4C4001
Text: M ST IN S E M K O N D I I OR, INC DRAM T T f ^ ° ° ¡ n ? ? * 3S ! MEG X 4 DRAM 1 MEG X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-90847 • MIL-STD-883 20-Pin DIP 20-Pin SOJ 20-Pin LCC 20-Pin Gull Wing
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MIL-STD-883
20-Pin
300mW
024-cycle
MIL-STD-883
MT4C4001J
D5000019
smd ic marking HL
MT4C4001
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MARKING 5bk
Abstract: No abstract text available
Text: • Al S ! IN SI Ml O N D I C l OR INC D R A M MT4C1259 883C 256K X 1 DRAM 2 5 6 K X 1 D R A M FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • M IL -S T D -8 8 3 16-Pin DIP (D-2) FEATURES • In d u stry sta n d a rd p in o u t a n d tim in g
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MT4C1259
16-Pin
MIL-STD-883
DS000015
MARKING 5bk
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N MT58LC64K16/18G1 64K X 16/18 SYNCBURST SRAM SYNCHRONOUS SRAM 6 4 K x 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT PIN ASSIGNMENT Top View 100-Pin TQFP • • • • Fast access times: 4.5,5,5.5 and 6ns
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MT58LC64K16/18G1
100-Pin
MT5BLC64K16/1BG1
0022T7D
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T58LC256K16/18F1 256K X 16/18 SYNCBURST SRAM l ^ i c n o N SYNCHRONOUS SRAM 256K x 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • • • • • • • • • • OPTIONS 100-Pin TQFP
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T58LC256K16/18F1
MT58LC256K16M8F1
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az18
Abstract: No abstract text available
Text: ADVANCE 256K SYNCHRONOUS SRAM MT58LC256K16/18B3 16/18 SYNCBURST SRAM X 2 5 6 K X 1 6 /1 8 S R A M +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9, 10 and 11ns Fast OE# access time: 5ns
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MT58LC256K16/18B3
100-lead
MT58LC256K16/1SB3
i11937
az18
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TN-58-11
Abstract: B887
Text: PRELIMINARY l ^ i c n D MT58LC128K16C6 128K X 16 SYNCBURST SRAM N 128K x 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • • • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)
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MT58LC128K16C6
100-lead
outp13
TN-58-11
B887
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TN-58-11
Abstract: No abstract text available
Text: ADVANCE |U |lt= R O N 256K M T 58 L C 2 5 6 K 1 6/18E1 16/18 S Y N C B U R S T SRAM X 256Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • •
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6/18E1
100-lead
MT58LC256K16/1
TN-58-11
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 256K TECHNOI OGY. INC +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6 and 7ns Fast OE# access times: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply
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MT58LC256K16/18D8
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Untitled
Abstract: No abstract text available
Text: |V|C=RON 64K SYN CH RO N O U S SRAM X MT58LC64K16/18B3 16/18 S Y N C B U R S T S R A M 6 4 K x 1 6 /1 8 S R A M FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 8.5,9,10 and 1Ins
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MT58LC64K16/18B3
100-Pin
MT56L
C64K16/18B3
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Untitled
Abstract: No abstract text available
Text: |U |I C R O N 32K X M T58LC 32K 32/36D 8 32/36 S Y N C B U R S T SRAM 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns
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T58LC
32/36D
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Untitled
Abstract: No abstract text available
Text: ADVANCE l^ iic n a N 32K X MT58LC32K32/36G1 32/36 S Y N C B U R S T SRAM 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • OPTIONS 100-Pin TQFP
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MT58LC32K32/36G1
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Untitled
Abstract: No abstract text available
Text: ADVANCE I^ IC Z R O N 128K X MT58LC128K16/18E1 16/18 SYNCBURST SRAM 128Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns
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MT58LC128K16/18E1
100-lead
MT58LC126K16/18E1
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