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    V20120 Price and Stock

    onsemi FSV20120V

    DIODE SCHOTTKY 120V 20A TO277-3
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    DigiKey FSV20120V Digi-Reel 18,315 1
    • 1 $1.87
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    FSV20120V Cut Tape 18,315 1
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    FSV20120V Reel 15,000 5,000
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    Avnet Americas FSV20120V Reel 18 Weeks 5,000
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    Mouser Electronics FSV20120V 22,065
    • 1 $1.74
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    Newark FSV20120V Cut Tape 1
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    Rochester Electronics FSV20120V 50,000 1
    • 1 $0.7064
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    Richardson RFPD FSV20120V 5,000
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    Avnet Asia FSV20120V 18 Weeks 5,000
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    Chip1Stop FSV20120V Cut Tape 4,950
    • 1 $1.22
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    • 1000 $0.65
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    EBV Elektronik FSV20120V 20 Weeks 5,000
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    Master Electronics FSV20120V 5,000
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    Eaton Bussmann MFBM1V2012-000-R

    FERRITE BEAD 0 OHM 0805 1LN
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    DigiKey MFBM1V2012-000-R Digi-Reel 10,665 1
    • 1 $0.1
    • 10 $0.037
    • 100 $0.0289
    • 1000 $0.02245
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    MFBM1V2012-000-R Cut Tape 10,665 1
    • 1 $0.1
    • 10 $0.037
    • 100 $0.0289
    • 1000 $0.02245
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    MFBM1V2012-000-R Reel 8,000 4,000
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    Newark MFBM1V2012-000-R Reel 4,000
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    Sager MFBM1V2012-000-R 4,000
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    Eaton Bussmann MFBW1V2012-000-R

    FERRITE BEAD 0 OHM 0805 1LN
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    DigiKey MFBW1V2012-000-R Cut Tape 9,522 1
    • 1 $0.1
    • 10 $0.036
    • 100 $0.028
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    MFBW1V2012-000-R Digi-Reel 9,522 1
    • 1 $0.1
    • 10 $0.036
    • 100 $0.028
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    MFBW1V2012-000-R Reel 4,000 4,000
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    Newark MFBW1V2012-000-R Reel 4,000
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    Vishay Semiconductors V20120S-E3-4W

    DIODE SCHOTTKY 120V 20A TO220-3
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    DigiKey V20120S-E3-4W Tube 7,831 1
    • 1 $1.14
    • 10 $0.768
    • 100 $1.14
    • 1000 $0.4465
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    Eaton Bussmann MFBM1V2012-090-R

    FERRITE BEAD 9 OHM 0805 1LN
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    DigiKey MFBM1V2012-090-R Cut Tape 3,094 1
    • 1 $0.1
    • 10 $0.034
    • 100 $0.0266
    • 1000 $0.02064
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    MFBM1V2012-090-R Digi-Reel 3,094 1
    • 1 $0.1
    • 10 $0.034
    • 100 $0.0266
    • 1000 $0.02064
    • 10000 $0.02064
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    Newark MFBM1V2012-090-R Reel 4,000
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    Sager MFBM1V2012-090-R 4,000
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    Find more V20120 price and stock on Findchips.com

    V20120 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    V20120C-E3/4W Vishay General Semiconductor Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 10A TO220AB Original PDF
    V20120CHM3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120C-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120S-E3/4W Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB Original PDF
    V20120SG-E3/4W Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB Original PDF
    V20120SGHM3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120SG-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120SHM3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120S-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF

    V20120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC 2002/96/EC

    vf20120sg

    Abstract: J-STD-002B
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020C, O-263AB O-220AB, vf20120sg J-STD-002B

    J-STD-002

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB O-220AB, J-STD-002

    vf20120sg

    Abstract: J-STD-002
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020, O-263AB VF20120SG vf20120sg J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: V20120SG, VI20120SG www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: V20120S, VI20120S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V20120C

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106

    J-STD-002

    Abstract: 1412D
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 J-STD-002 1412D

    V20120C

    Abstract: No abstract text available
    Text: New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VF20120C, VB20120C VI20120C O-220AB ITO-220AB J-STD-020C, O-263AB O-220AB, ITO-220AB V20120C

    v20120s

    Abstract: No abstract text available
    Text: V20120S, VF20120S & VI20120S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.491 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VF20120S VI20120S O-220AB ITO-220AB V20120S 2002/95/EC 2002/96/EC O-262AA v20120s

    V20120C

    Abstract: J-STD-002
    Text: New Product V20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		PDF V20120C O-220AB 22-B106 2002/95/EC 2002/96/EC O-220Alectual 18-Jul-08 V20120C J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120SG 22-B106

    J-STD-002

    Abstract: VF20120SG
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106 J-STD-002 VF20120SG

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S O-220AB ITO-220AB V20120S VF20120S J-STD-020, O-263AB

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V20120C

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC 2002/96/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC

    Untitled

    Abstract: No abstract text available
    Text: V20120C, VI20120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 V20120C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120C VF20120C

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120C, VF20120C, VB20120C VI20120C O-220AB ITO-220AB V20120C VF20120C J-STD-020, O-263AB

    VF20120SG

    Abstract: No abstract text available
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG O-220AB ITO-220AB V20120SG VF20120SG J-STD-020, O-263AB VF20120SG

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC