V09C
Abstract: V09G V09E v09 diode Hitachi DSA00515
Text: FAST RECOVERY DIODE V09 OUTLINE DRAWING V09C 200V V09E (400V) V09G (600V) Cathode band 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Symbol(Blue) • For high speed switching.
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29MIN.
62MIN.
V09C
V09G
V09E
v09 diode
Hitachi DSA00515
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V09G
Abstract: No abstract text available
Text: FAST RECOVERY DIODE V09 OUTLINE DRAWING V09C 200V V09E (400V) V09G (600V) Cathode band 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Symbol(Blue) • For high speed switching.
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62MIN.
29MIN.
PDE-V09-0
V09G
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE V09 FEATURES OUTLINE DRAWING • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS V09C V09E V09G Repetitive Peak Reverse Voltage V RRM V 200 400 600 Non-Repetitive Peak Reverse Voltage
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PDE-V09-2
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V09G
Abstract: V09C V09E diode v09 hitachi
Text: FAST RECOVERY DIODE V09 OUTLINE DRAWING V09C 200V V09E (400V) V09G (600V) Cathode band 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Symbol(Blue) • For high speed switching.
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29MIN.
62MIN.
V09G
V09C
V09E
diode v09 hitachi
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V09G
Abstract: V09C v09 diode V09E
Text: FAST RECOVERY DIODE V09 OUTLINE DRAWING Color of cathode band Type V09C 200V V09E (400V) V09G (600V) φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) • 高速スイッチング用 • 拡散接合形ガラスモールド構造 Cathode band 29MIN. (1.14) 長 29MIN.
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62MIN.
29MIN.
PDJ-V09-0
V09G
V09C
v09 diode
V09E
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low capacitance surge protection dsl
Abstract: "low capacitance" "surge protection" dsl DSL70 SC-61A IEC61000-4-4 SP000362209
Text: Product Brief DSL70 Superior ESD & Transient protection on ADSL, VDSL and other broadband applications Customer Values Best in market protection solution supporting efficient BOM optimization. Highly reliable protection against DSL70 is the protection diode selected to be integrated into the newest ADSL/
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DSL70
DSL70
B132-H9306-X-X-7600
low capacitance surge protection dsl
"low capacitance" "surge protection" dsl
SC-61A
IEC61000-4-4
SP000362209
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one cell battery protection ic diagram
Abstract: DS2726 DS2726G
Text: Rev 0; 4/08 5- to 10-Cell Li+ Protector with Cell Balancing The DS2726 provides full charge and discharge protection for 5- to 10-cell lithium-ion Li+ battery packs. The protection circuit monitors individual cell voltages to detect overvoltage and undervoltage conditions. Protection against
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10-Cell
DS2726
DS2726
one cell battery protection ic diagram
DS2726G
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DS2726
Abstract: DS2726G 5cell
Text: 19-5482; Rev 3; 8/10 5-Cell to 10-Cell Li+ Protector with Cell Balancing Features The DS2726 provides full charge and discharge protection for 5- to 10-cell lithium-ion Li+ battery packs. The protection circuit monitors individual cell voltages to detect overvoltage and undervoltage conditions. Protection against
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10-Cell
DS2726
DS2726G
5cell
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DS2726
Abstract: DS2726G
Text: Rev 1; 9/08 5-Cell to 10-Cell Li+ Protector with Cell Balancing Features The DS2726 provides full charge and discharge protection for 5- to 10-cell lithium-ion Li+ battery packs. The protection circuit monitors individual cell voltages to detect overvoltage and undervoltage conditions. Protection against
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10-Cell
DS2726
DS2726G
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DS2726
Abstract: DS2726G cell balancing
Text: Rev 2; 1/09 5-Cell to 10-Cell Li+ Protector with Cell Balancing Features The DS2726 provides full charge and discharge protection for 5- to 10-cell lithium-ion Li+ battery packs. The protection circuit monitors individual cell voltages to detect overvoltage and undervoltage conditions. Protection against
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10-Cell
DS2726
DS2726G
cell balancing
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vert
Abstract: BV12 BV16 NTE1496
Text: NTE1496 Integrated Circuit Vertical/Horizontal OSC & X–Ray Circuit Description: The NTE1496 is an integrated circuit in a 16–Lead DIP type package designed for horizontal and vertical deflection circuits of color and monochrome television receivers. Functions:
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NTE1496
NTE1496
315kHz
vert
BV12
BV16
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DHM3J120
Abstract: ZSH5MT27C ZSH5MAZ27 DHM3T30 hitachi V06 DHM3G80 DHM3 H114 ZSH5MT48C 7637-2 12V
Text: HITACHI Power Diode Ｓｅｌｅｃｔｉｏｎ Ｇｕｉｄｅ 日立パワーダイオード セレクションガイド －第 １ 版－ 株式会社 日立製作所 電力システム社 電機システム事業部 パワーデバイス本部 事業企画部
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APL-7107R1
100VVZZ
100VV
IRSM130A)
001500V
214kV
DHM3J120
ZSH5MT27C
ZSH5MAZ27
DHM3T30
hitachi V06
DHM3G80
DHM3
H114
ZSH5MT48C
7637-2 12V
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Untitled
Abstract: No abstract text available
Text: AZ420 MINIATURE GENERAL PURPOSE RELAY FEATURES • • • • • • • • • • Rugged construction for high reliability Life expectancy greater than 100 million operations DC coils to 115 V Power consumption as low as 25 mW per pole available Current sensitive and voltage sensitive coils available
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AZ420
E43203
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ST141-A1
Abstract: Crossbar contact AZ421 AZ420 AZ429 C035 C045 C408 AZ421-101
Text: AZ420 MINIATURE GENERAL PURPOSE RELAY FEATURES • • • • • • • • • • Rugged construction for high reliability Life expectancy greater than 100 million operations DC coils to 115 V Power consumption as low as 25 mW per pole available Current sensitive and voltage sensitive coils available
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AZ420
E43203
ST141-A1
Crossbar contact
AZ421
AZ420
AZ429
C035
C045
C408
AZ421-101
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Crossbar contact
Abstract: ST140 ST141-A1 AZ431 az420 az421 ST141 az421 transistor C408 diode C035
Text: AZ420 MINIATURE GENERAL PURPOSE RELAY FEATURES • • • • • • • • • • Rugged construction for high reliability Life expectancy greater than 100 million operations DC coils to 115 V Power consumption as low as 25 mW per pole available Current sensitive and voltage sensitive coils available
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AZ420
E43203;
8/21/08W
Crossbar contact
ST140
ST141-A1
AZ431
az420
az421
ST141
az421 transistor
C408 diode
C035
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AA REVISIONS D IS T 22 LTR DESCRIPTION C1 DATE REVISED PER E C Q -09- 024927 DWN APVD KK AEG 09N O V09 M A T E R IA L :
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ECO-09-024927
09NOV09
UL94V-0.
81//m[
13JUN2005
31MAR2000
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FHF100-200_300-C_A_3D
Abstract: V09G i2t class CC
Text: = 5 ^ 0 • S H I I AcH '68C 0 9 8 2 4 =i* —-K Fast Recovery Diode DE I bfl mlH LSOS D D OC Hf l S H T V09 4£ T -Q 2 > '1 \ V r r m : 200V~600V lF(AV) : 0.8A trr: 0.4^s 03.5 M A X (0.14) T yp e \? p Symbol(Blue) Cathode band C o lo r o f cathode band
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1S2244
1S2246
1S224
22/iSec
600S2
FHF100-200_300-C_A_3D
V09G
i2t class CC
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transistor g23 mosfet
Abstract: FZj 111 TRANSISTOR BC 137 transistor g23 3576 transistor n channel mosfet marking Bc TRANSISTOR MARKING CODE A2S bf996 marking A1S TRANSISTOR SOT-23 marking g23
Text: TELEFUNKEN EL EC TR O N I C IALGG BF 996 Marked with: M 96 •¡mmiFMlMIN] electronic Creative Technofogies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially or UHF-tuners Features: • Integrated Gate protection diodes
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BIAL66
ft-11
569-GS
000s154
hal66
if-11
transistor g23 mosfet
FZj 111
TRANSISTOR BC 137
transistor g23
3576 transistor
n channel mosfet marking Bc
TRANSISTOR MARKING CODE A2S
bf996
marking A1S TRANSISTOR
SOT-23 marking g23
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AA 22 R E VIS IO N S LTR DATE DWN APVD 13 JU N 2 0 0 5 JA SF DESCRIPTION A A1 REV PER EC 0S1 1 - 0 2 0 1 - 0 4 REVISED PER E C 0 - 0 9 - 0 2 4 9 2 7
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3JUN2005
13JUN2005
24AUG05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. R E VIS IO N S D IS T LOC ALL RIGHTS RESERVED. 00 AA LTR DATE DESCRIPTION B B' ECO—06 —0 0 9 2 3 8 DWN 22APR2006 REVISED PER E C 0 - 0 9 - 0 2 4 9 2 7
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22APR2006
27/im
15JUN2005
31MAR2000
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Q62702-S506
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSS 87 • SIPMOS - enhancement mode • Drain-source voltage Vbs = 240V • Continuous drain current l B = 0.29A • Drain-source on-resistance • Total power dissipation 8 ds «»> = 6.0Q PD - 1.0W Type Marking Ordering code for
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Q62702-S506
BSS87
Q62702-S506
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TA7609P
Abstract: TA7609 BV12
Text: TOSHIBA TA7609P D E F L E C T I O N C O M B I N A T I O N FOR C O L O R AND M O N O C H R O M E T E L E V I S I O N RECEIV E RS . unit: run o FUNCTION HORIZONTAL SECTION . . . . . . . Synce Separator Saw Tooth Wave Type AFC 2fn Horizontal Oscillator Flip-Flop
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TA7609P
315kHz
DIP16-P-300A
ICC15
200kO)
TA7609P
TA7609
BV12
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irlm110
Abstract: No abstract text available
Text: IRLM110A Advanced Power MOSFET FEATURES b v dss = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 1.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ VDS = 100V
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IRLM110A
OT-223
7Tbm42
0Q3T17G
003b323
irlm110
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AA 22 ALL RIGHTS RESERVED. R E VIS IO N S LTR DESCRIPTION A1 ORANGE YELLOW GREEN GREEN DATE REVISED PER E C Q - 0 9 - 0 2 4 9 2 7 DWN APVD
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27/zm
27//m
DIA005
16JUN2005
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