Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 0.1 A Collector-base voltage
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O-92MOD
2SC2482
O-92MOD
30MHz
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transistor C2482
Abstract: C2482 Elite Enterprises TRANSISTOR NPN C2482 C2482 Transistor C2482 NPN Transistor c2482 npn C2482 C Elite Enterprises H.K C2482 data sheet
Text: C2482 NPN Epitaxial Silicon Transistor TO – 92L Features Collection Dissipation : PC max = 900mW Collector-Emitter Voltage : VCEO = 300V Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage
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C2482
900mW
30MHz
transistor C2482
C2482
Elite Enterprises
TRANSISTOR NPN C2482
C2482 Transistor
C2482 NPN Transistor
c2482 npn
C2482 C
Elite Enterprises H.K
C2482 data sheet
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2SC2482
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2482 TO-92L TRANSISTOR NPN FEATURE z High voltage :Vceo=300V z Small collector output capacitance: Cob=3.0pF(Typ) 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92L
2SC2482
O-92L
30MHz
2SC2482
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2sc2482
Abstract: TO 92L NPN Transistor V 90150 transistor transistor 2sc2482 TO-92L
Text: 2SC2482 TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 3. BASE Features 1 2 7.800 8.200 3 0.600 0.800 High voltage :Vceo=300V Small collector output capacitance: Cob=3.0pF(Typ) 0.350 0.550 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92L
2SC2482
O-92L
30MHz
2sc2482
TO 92L NPN Transistor
V 90150 transistor
transistor 2sc2482
TO-92L
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2SC2482
Abstract: v 90150 transistor 2sc2482
Text: 2SC2482 2SC2482 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 0.1 A Collector-base voltage 300 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SC2482
O-92MOD
30MHz
2SC2482
v 90150
transistor 2sc2482
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE z High Voltage :Vceo=300V z Small Collector Output Capacitance: Cob=3.0pF(Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92MOD
2SC2482
O-92MOD
30MHz
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2SC2482
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 TO-92MOD TRANSISTOR NPN FEATURE z High voltage :Vceo=300V z Small collector output capacitance: Cob=3.0pF(Typ) 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92MOD
2SC2482
O-92MOD
30MHz
2SC2482
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2482 TO-92L TRANSISTOR NPN 1. EMITTER FEATURE z High Voltage :VCEO=300V z Small Collector Output Capacitance: Cob=3.0pF(Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92L
2SC2482
O-92L
30MHz
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2SC2482
Abstract: transistor 2sc2482 TO92-MOD V 90150 transistor TO-92MOD
Text: 2SC2482 TO-92MOD Transistor NPN TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 3. BASE 8.400 8.800 Features 0.900 1.100 0.400 0.600 High voltage :Vceo=300V Small collector output capacitance: Cob=3.0pF(Typ) 13.800 14.200 1.500 TYP 2.900 3.100 Symbol
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2SC2482
O-92MOD
O-92MOD
30MHz
2SC2482
transistor 2sc2482
TO92-MOD
V 90150 transistor
TO-92MOD
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2482 ＴＯ－９２ＭＯＤ TRANSISTOR（ NPN ） 1.EMITTER FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage
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O-92MOD
2SC2482
500TYP
059TYP
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2SC2482
Abstract: transistor 2sc2482 2SC2482Y 2SC2482 C
Text: TM Micro Commercial Components 2SC2482 2SC2482-O 2SC2482-Y omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • NPN Epitaxial Silicon Transistor High Voltage:Vceo=300V Small collector output capacitance:Cob=3.0pF Typ
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2SC2482
2SC2482-O
2SC2482-Y
O-92MOD
2SC2482
transistor 2sc2482
2SC2482Y
2SC2482 C
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2sc2482
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • • 2SC2482 2SC2482-O 2SC2482-Y omponents 20736 Marilla Street Chatsworth !"# $ % !"# Halogen free available upon request by adding suffix "-HF"
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2SC2482
2SC2482-O
2SC2482-Y
2sc2482
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2SC2482
Abstract: 2SC2482Y
Text: MCC TM Micro Commercial Components 2SC2482 2SC2482-O 2SC2482-Y omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • High Voltage:Vceo=300V Small collector output capacitance:Cob=3.0pF Typ
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2SC2482
2SC2482-O
2SC2482-Y
2SC2482Y
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SC2482 2SC2482-O 2SC2482-Y omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • Halogen free available upon request by adding suffix "-HF"
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2SC2482
2SC2482-O
2SC2482-Y
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MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
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BCE0003F
MT4S300T
TA4032FT
MT3S111TU
JAPANESE 2SC TRANSISTOR 2010
MT4S301T
TA4029CTC
TB7602CTC
MT3S111P
JAPANESE TRANSISTOR 2SC 2010
2sk3476
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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GE-MOV 275V
Abstract: SCR based induction furnace circuit diagram varistors* gemov 250v ge ecm 2.3 series motors 10J 3kv AN9771 micro switch leach 1480 Thyristor 1200 A, IDM SCR Unit, LSI 5350 Storage Enclosure AN9774
Text: Application Notes and Technical Brief 10 Transient Voltage Suppression PAGE AN8820.3 Recommendations for Soldering Terminal Leads to MOV Varistor Discs . . . . . . . . . . . . . . . . . . . 10-3 AN9108.4 Littelfuse “ML” Multilayer Surface Mount Surge Suppressors . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-4
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AN8820
AN9108
AN9211
AN9304
SP720
AN9307
AN9308
UL1950,
GR-1089,
DB450,
GE-MOV 275V
SCR based induction furnace circuit diagram
varistors* gemov 250v
ge ecm 2.3 series motors
10J 3kv
AN9771
micro switch leach 1480
Thyristor 1200 A, IDM SCR Unit,
LSI 5350 Storage Enclosure
AN9774
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RE8RB31BU
Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
Text: global specialist in energy management The architects of efficiency Singapore Mongolia Price List Catalogue 2013 Electrical Distribution, Automation & Control ! % 3% %3 3 '3 3 , 3 3% %3 ( +3 &-=33 &2/=
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197903476G)
MN-EC1113
SG-PL0413
RE8RB31BU
LC1D40A
RE8TA41BU
A9F74
b40 B2 RECTIFIER 400V
LC1DT60A
LC1-D50A
LC1D40008
XUX0ARCTT16T
LR2K
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relay 12 volts ras 1210
Abstract: GE-MOV 275L40B MOV GE V150 LA10 275l40b Disc ceramic capacitor GE 130L20 hahn transformer VDE 0551 ge 130l10 c106d spice HARRIS V481DB40 G1 capacitor 275L20
Text: $5.00 Technical Assistance Transient Voltage Suppression Technical Assistance Electronic Technical Support Ask our experienced staff of engineers for assistance with: Electronic services from Littelfuse offer you the most current information possible. • Device Selection
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transistor 2sc2482
Abstract: No abstract text available
Text: MCC TO-92MOD Plastic-Encapsulate T ran sisto rs^ ^ ^ 2SC2482 TRANSISTOR NPN FEATURES P cm: 0.9 W (Tam b=25°C) IcM: 0.1 A M atage W ÈÉÈÉÈÊ é a m V(BR)CBO: . 300 v W j W Ü t t j g i ^ sto rag e Junction tem perature range Tj.Tstg: -55t: to + 150°C
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O-92MOD
2SC2482
lc--20
30MHz
transistor 2sc2482
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NFET DIE CHIP
Abstract: poly silicon resistor OP02
Text: . I . - HOLT INTEGRATED CIRCUITS 1£E J T 454114.3 OOQOEbl 4 •P¥2-3/ HI - 5 3 0 0 CMOS ANALOG/DIGITAL ARRAY General Description The HI-5300 CMOS Analog/Digital Array uses stan dard CMOS silicon gate double poly fabrication tech
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HI-5300
NFET DIE CHIP
poly silicon resistor
OP02
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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