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    V/TM 2620 Search Results

    V/TM 2620 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-22620RH-Q Renesas Electronics Corporation Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier Visit Renesas Electronics Corporation
    SLG55026-200300V Renesas Electronics Corporation High Voltage Gate Driver Visit Renesas Electronics Corporation
    R5S72620W144FP#U0 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    HA2-2620-2 Renesas Electronics Corporation 100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers Visit Renesas Electronics Corporation
    R5S72620P144FP#UZ Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation

    V/TM 2620 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V


    Original     		PDF FDP51N25 FDPF51N25 FDPF51N25

    FDPF79N15

    Abstract: FDP79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


    Original     		PDF FDP79N15 FDPF79N15 O-220 FDPF79N15

    51a marking

    Abstract: FDPF51N25
    Text: UniFET FDPF51N25 TM 28A, 250V N-Channel MOSFET Features Description • RDS on = 0.060 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)


    Original     		PDF FDPF51N25 O-220F FDPF51N25 51a marking

    FDP79N15

    Abstract: FDPF79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


    Original     		PDF FDP79N15 FDPF79N15 O-220 FDPF79N15

    51a marking

    Abstract: FDP51N25
    Text: UniFET TM FDP51N25 250V N-Channel MOSFET Features Description • 51A, 250V, RDS on = 0.060Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)


    Original     		PDF FDP51N25 O-220 FDP51N25 51a marking

    79a diode

    Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


    Original     		PDF FDA79N15 79a diode 150V n-channel MOSFET D 3410 A FDA79N15

    FDA79N15

    Abstract: No abstract text available
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


    Original     		PDF FDA79N15 FDA79N15

    DG09

    Abstract: AWU6601 AWU6605 AWU6605RM45P9 AWU6605RM45Q7
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.3 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 38 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm AWU6605 • Simpler Calibration with only 2 Bias modes


    Original     		PDF AWU6605 DG09 AWU6601 AWU6605 AWU6605RM45P9 AWU6605RM45Q7

    8365M

    Abstract: No abstract text available
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6605 40 % @ POUT = +28.5 dBm 21 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias modes


    Original     		PDF AWU6605 8365M

    Untitled

    Abstract: No abstract text available
    Text: AWU6602 TM HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Eficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6602

    AWU6608

    Abstract: 6608R DG09 AWU6601 AWU6608RM45P9 AWU6608RM45Q7
    Text: AWU6608 HELP3 Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6608 40 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6608 AWU6608 6608R DG09 AWU6601 AWU6608RM45P9 AWU6608RM45Q7

    Untitled

    Abstract: No abstract text available
    Text: AWU6602 HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6602 AWU6602

    Untitled

    Abstract: No abstract text available
    Text: AWU6608 HELP3 Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6608 40 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6608 AWU6608

    dG09

    Abstract: No abstract text available
    Text: AWU6602 HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6602 dG09

    DG09

    Abstract: AWU6601 AWU6605 HSPA Module AWU6605RM45P9 AWU6605RM45Q7
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 38 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm AWU6605 • Simpler Calibration with only 2 Bias modes


    Original     		PDF AWU6605 DG09 AWU6601 AWU6605 HSPA Module AWU6605RM45P9 AWU6605RM45Q7

    6602R

    Abstract: DG09 MPR 55 AWU6601 AWU6602 AWU6602RM45P9 AWU6602RM45Q7
    Text: AWU6602 HELP3 Band 2 / WCDMA 3.4 V / 29 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6602 39 % @ POUT = +29 dBm 19 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6602 6602R DG09 MPR 55 AWU6601 AWU6602 AWU6602RM45P9 AWU6602RM45Q7

    Untitled

    Abstract: No abstract text available
    Text: AWU6605 HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform AWU6605 40 % @ POUT = +28.5 dBm 21 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias modes


    Original     		PDF AWU6605

    Untitled

    Abstract: No abstract text available
    Text: AWU6605 TM HELP3 Band 5 / WCDMA 3.4 V / 28.5 dBm Linear PA Module Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • High Eficiency: R99 waveform AWU6605 38 % @ POUT = +28.5 dBm 22 % @ POUT = +17 dBm • Simpler Calibration with only 2 Bias modes


    Original     		PDF AWU6605

    DG09

    Abstract: AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7
    Text: AWU6604 HELP3 Band 4 & 9 WCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 39 % @ POUT = +28.25 dBm 21 % @ POUT = +16 dBm AWU6604 • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6604 AWS/UMTS1700-Band DG09 AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7

    aws duplexer

    Abstract: DG09 HBT 01 05 AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7
    Text: AWU6604 HELP3 Band 4 & 9 WCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.3 FEATURES • HSPA Compliant • InGaP HBT Technology • High Efficiency: R99 waveform 39 % @ POUT = +28.25 dBm 21 % @ POUT = +16 dBm AWU6604 • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6604 AWS/UMTS1700-Band aws duplexer DG09 HBT 01 05 AWU6601 AWU6604 AWU6604RM45P9 AWU6604RM45Q7

    Untitled

    Abstract: No abstract text available
    Text: AWU6601 TM HELP3 Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module Data Sheet - Rev 2.4 FEATURES HSPA Compliant • InGaP HBT Technology • Simpler Calibration with only 2 Bias Modes • Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		PDF AWU6601

    Untitled

    Abstract: No abstract text available
    Text: AWU6604 TM HELP3 Band 4 & 9 WCDMA 3.4 V / 28.25 dBm Linear PA Module Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • High Eficiency: R99 waveform • 39 % @ POUT = +28.25 dBm • 21 % @ POUT = +16 dBm AWU6604 • Simpler Calibration with only 2 Bias Modes


    Original     		PDF AWU6604

    AT2110

    Abstract: No abstract text available
    Text: AWU6601 HELP3 Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • InGaP HBT Technology • Simpler Calibration with only 2 Bias Modes • AWU6601 Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		PDF AWU6601 AT2110

    Untitled

    Abstract: No abstract text available
    Text: AWU6601C HELP3 Band 1 / WCDMA / TD-SCDMA 3.4 V / 28.25 dBm Linear PA Module TM Data Sheet - Rev 2.1 FEATURES • HSPA Compliant • InGaP HBT Technology • Simpler Calibration with only 2 Bias Modes • AWU6601 Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		PDF AWU6601C