EPD-310-0-0
Abstract: 320nm
Text: EPD-310-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVB UV glass with filter SiC TO-5 Description High spectral sensitivity in the UVB range 290 nm - 330nm , low cost chip based on SiC 1,2 Environmental technology, analytical techniques,
|
Original
|
PDF
|
EPD-310-0-0
330nm)
320nm
D-12555
320nm
|
uvb sensor
Abstract: No abstract text available
Text: UVB - Sensor Head Rev 03/08 This optical sensor head is designed to measure irradiance in the UVB wavelength range. It is equipped with an inbuilt amplifier which allows irradiance measurement over An several analogous decades. voltage will be output, which is
|
Original
|
PDF
|
D-12555
uvb sensor
|
GUVB-S10GD
Abstract: AG32S
Text: Ultraviolet selective AlGaN based UV sensor GUVB-S10GD AG32S-SMD Features • UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible • Semiconductor material AlGaN • SMD package with quartz window
|
Original
|
PDF
|
GUVB-S10GD
AG32S-SMD)
Phot5211,
GUVB-S10GD
AG32S
|
uv sensor
Abstract: ultraviolet sensor SUN SENSOR uv photodiode
Text: Ultraviolet selective GaN based UV sensor GaN-UVA-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN
|
Original
|
PDF
|
|
SIC01S-HT
Abstract: silicon carbide UV photodiode
Text: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
|
Original
|
PDF
|
SIC01S-HT
SIC01S-HT
silicon carbide
UV photodiode
|
uv sensor
Abstract: ultraviolet sensor SUN SENSOR AG38S-SMD
Text: Ultraviolet selective GaN based UV sensor AG38S-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN
|
Original
|
PDF
|
AG38S-SMD
uv sensor
ultraviolet sensor
SUN SENSOR
AG38S-SMD
|
ultraviolet sensor
Abstract: AG28S uv sensor AG28S uvc photodiode
Text: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN
|
Original
|
PDF
|
AG28S
ultraviolet sensor
AG28S
uv sensor AG28S
uvc photodiode
|
SG01S-HT
Abstract: uv sensor silicon carbide SG01S
Text: Ultraviolet selective SiC based UV sensor SG01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
|
Original
|
PDF
|
SG01S-HT
SG01S-HT
uv sensor
silicon carbide
SG01S
|
SG01S-5
Abstract: silicon carbide SG01S
Text: Ultraviolet selective SiC based UV sensor with large TO5 housing for broad incident angle SG01S-5 Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
|
Original
|
PDF
|
SG01S-5
SG01S-5
silicon carbide
SG01S
|
uv photodiode
Abstract: uv sensor ultraviolet sensor datasheet AG28S uvb sensor uv sensor AG28S ultraviolet sensors AG38S-TO AG32S AG38S-SMD
Text: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN
|
Original
|
PDF
|
AG28S
in1093
AG38S-TO
uv photodiode
uv sensor
ultraviolet sensor datasheet
AG28S
uvb sensor
uv sensor AG28S
ultraviolet sensors
AG38S-TO
AG32S
AG38S-SMD
|
ultraviolet sensor
Abstract: TR15 uv sensor SG01S
Text: Ultraviolet selective SiC based UV sensor SG 01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
|
SG01S
Abstract: uv sensor silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
SG01S
SG01S
uv sensor
silicon carbide
|
ultraviolet sensor
Abstract: silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01S-ISO Features • Two insulated pins • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
SG01S-ISO
ultraviolet sensor
silicon carbide
|
ceramo paste
Abstract: uv sensor ultraviolet sensor CO Sensor
Text: Ultraviolet selective SiC based UV sensor UV_Water_1 Features • ¼ Stainless Steel Sensor Probe • compliance with IP65 • 15 bar water proof • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
|
Original
|
PDF
|
|
|
|
silicon carbide
Abstract: No abstract text available
Text: Ultraviolet selective SiC based UV sensor SG01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
SG01L-5
S280nm
S400nm
silicon carbide
|
uv photodiode SIC01L-18
Abstract: SIC01L-18 cree ultraviolet uv sensor
Text: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
SIC01L-18
S280nm
S400nm
uv photodiode SIC01L-18
SIC01L-18
cree ultraviolet
uv sensor
|
ultraviolet sensor
Abstract: uv sensor silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01M Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
SG01M
S280nm
S400nm
ultraviolet sensor
uv sensor
silicon carbide
|
AG32S
Abstract: UVA photodiode
Text: Ultraviolet selective AlGaN based UV sensor AG32S Features • UVB & UVC selective photodiode • Optimally suited for sun-UV dosimetry • Intrinsicly unsensitive in the UVA and in the visible due to the wide-bandgap semiconductor material AlGaN • TO-18 metal package with 0,076 mm2 active chip area
|
Original
|
PDF
|
AG32S
AG32S
UVA photodiode
|
uv flame sensor
Abstract: ultraviolet sensor SG01 FLAME SENSOR UV SG01M uv sensor silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01M – Lens Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area
|
Original
|
PDF
|
SG01M
S280nm
S400nm
Flammenerkennung459
uv flame sensor
ultraviolet sensor
SG01
FLAME SENSOR UV
SG01M
uv sensor
silicon carbide
|
uv flame sensor
Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
Text: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area
|
Original
|
PDF
|
SIC01M
S280nm
S400nm
uv flame sensor
FLAME SENSOR UV
ultraviolet sensor
uv photodiode sic01m
ultraviolet sensor flame
cree Sic
uv sensor
Ultraviolet
SIC01M
|
ultraviolet sensor
Abstract: silicon carbide
Text: Ultraviolet selective SiC based UV sensor SG01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
SG01L-18
S280nm
S400nm
ultraviolet sensor
silicon carbide
|
uv sensor
Abstract: SIC01L-5 SUN SENSOR silicon carbide
Text: Ultraviolet selective SiC based UV sensor SIC01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
|
Original
|
PDF
|
SIC01L-5
S280nm
S400nm
uv sensor
SIC01L-5
SUN SENSOR
silicon carbide
|
EPD-310-0-0
Abstract: UV 310 nm
Text: Photodiode EPD-310-0-0.3-1 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-B clear UV-glass + filters SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVB range 290 nm - 330 nm , mounted in hermetically sealed TO-39 package with clear
|
Original
|
PDF
|
EPD-310-0-0
D-12555
UV 310 nm
|
GUVB-S11SD
Abstract: No abstract text available
Text: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring
|
Original
|
PDF
|
GUVB-S11SD
GUVB-S11SD
|
