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Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 TO-263 SYMBOL 2.Drain *Pb-free plating product number: UT40N03TL	Original	UT40N03T O-263 UT40N03TL UT40N03T-TQ2-R UT40N03TL-TQ2-R UT40N03T-TQ2-T UT40N03TL-TQ2-T QW-R502-172	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain	Original	UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-T UT40N03TG-TM3-T UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R	PDF
UT40N03L Abstract: UT40N03G UT40N03T Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain Lead-free: UT40N03L	Original	UT40N03T UT40N03L UT40N03G UT40N03T-TN3-R UT40N03T-TN3-T UT40N03T-TQ2-R UT40N03T-TQ2-T UT40N03TL-TN3-R UT40N03TL-TN3-T UT40N03TL-TQ2-R UT40N03L UT40N03G UT40N03T	PDF
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD UT40N03T Power MOSFET 3 0 V , 2 8 A N -CH AN N EL EN H AN CEM EN T M ODE POWER M OSFET ̈ FEAT U RES * RDS ON = 25m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified	Original	UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-T UT40N03TG-TM3-T UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain	Original	UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-R UT40N03TG-TM3-R UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source	Original	UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R UT40N03TG-TQ2-R UT40N03TL-TQ2-T	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * RDS ON < 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL	Original	UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T O-220 UT40N03TL-TM3-T UT40N03TG-TM3-T O-251 UT40N03TL-TN3-R UT40N03TG-TN3-R O-252	PDF