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    4x3 matrix keypad

    Abstract: 3x4 KEYPAD matrix keypad 4x3 code assembly of matrix keypad 4x3 KEYPAD 4X3 16 4x4 Buttons Keypad Matrix 4x3 standard keypad KEYPAD 4X3 SWITCH 3x4 keyboard keypad 4x4 assembly code
    Text: Standard Keypads SERIES 84 Unsealed, .750" Centers FEATURES • 3/4" Button Centers • Post Mounted • Mounts by Grooveless Retaining Rings or Heat Upset Post • Snap-Dome Contact Provides Positive Feedback Keyboards and Keypads DIMENSIONS In inches and millimeters


    Original     		PDF 84AB1 4x3 matrix keypad 3x4 KEYPAD matrix keypad 4x3 code assembly of matrix keypad 4x3 KEYPAD 4X3 16 4x4 Buttons Keypad Matrix 4x3 standard keypad KEYPAD 4X3 SWITCH 3x4 keyboard keypad 4x4 assembly code

    CDFP4-F16

    Abstract: HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS
    Text: HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)


    Original     		PDF HCTS193MS -55oC 125oC 05A/cm2 HCTS193 TA14451A. CDFP4-F16 HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS

    2012 ics class X date sheet

    Abstract: HCS32D HCS32DMSR HCS32HMSR HCS32K HCS32KMSR HCS32MS
    Text: HCS32MS Radiation Hardened Quad 2-Input OR Gate September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCS32MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 05A/cm2 2012 ics class X date sheet HCS32D HCS32DMSR HCS32HMSR HCS32K HCS32KMSR HCS32MS

    HCS109MS

    Abstract: CDFP4-F16 HCS109DMSR HCS109HMSR HCS109KMSR HCS109
    Text: HCS109MS Radiation Hardened Dual JK Flip Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCS109MS MIL-STD-1835 CDIP2-T16, 05A/cm2 HCS109 TA14340A. HCS109MS CDFP4-F16 HCS109DMSR HCS109HMSR HCS109KMSR

    15KV

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR ESD PROTECTION DIODE L15ESD12VE2 STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 150 WATTS GENERAL DESCRIPTION SOD-882 The L15ESD12VE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge


    Original     		PDF L15ESD12VE2 OD-882 L15ESD12VE2 MIL-STD-883C 100mV 15KV

    vw 9a engines

    Abstract: ACTS373DMSR ACTS373HMSR ACTS373KMSR ACTS373MS
    Text: ACTS373MS Radiation Hardened Octal Transparent Latch, Three-State April 1995 Features Pinouts 20 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T20, LEAD FINISH C TOP VIEW • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD Si • Single Event Upset (SEU) Immunity


    Original     		PDF ACTS373MS MIL-STD-1835 CDIP2-T20, -55oC 125oC vw 9a engines ACTS373DMSR ACTS373HMSR ACTS373KMSR ACTS373MS

    HCS00HMSR

    Abstract: HCS00D HCS00DMSR HCS00K HCS00KMSR HCS00MS
    Text: HCS00MS Radiation Hardened Quad 2-Input NAND Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCS00MS MIL-STD-1835 CDIP2-T14 -55oC 125oC 05A/cm2 HCS00HMSR HCS00D HCS00DMSR HCS00K HCS00KMSR HCS00MS

    HCS273KMSR

    Abstract: HCS273 HCS273DMSR HCS273HMSR HCS273MS
    Text: HCS273MS Radiation Hardened Octal D Flip-Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCS273MS MIL-STD-1835 CDIP2-T20, -55oC 125oC 05A/cm2 HCS273 TA14307B. HCS273KMSR HCS273DMSR HCS273HMSR HCS273MS

    HCTS20D

    Abstract: HCTS20DMSR HCTS20HMSR HCTS20K HCTS20KMSR HCTS20MS
    Text: HCTS20MS TM Radiation Hardened Dual 4-Input NAND Gate September 1995 Features • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day


    Original     		PDF HCTS20MS -55oC 05A/cm2 HCTS20 TA14426A. HCTS20D HCTS20DMSR HCTS20HMSR HCTS20K HCTS20KMSR HCTS20MS

    CDFP4-F16

    Abstract: HCTS161ADMSR HCTS161AHMSR HCTS161AKMSR HCTS161AMS
    Text: HCTS161AMS Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • Minimum LET for SEU Upsets: >100 MEV-cm2/mg


    Original     		PDF HCTS161AMS MIL-STD-1835 CDIP2-T16, -55oC 125oC 104mils 05A/cm2 HCTS161A CDFP4-F16 HCTS161ADMSR HCTS161AHMSR HCTS161AKMSR HCTS161AMS

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L15ESD12VE2 STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DIODE GENERAL DESCRIPTION SOD-882 The L15ESD12VE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge


    Original     		PDF L15ESD12VE2 L15ESD12VE2 OD-882 MIL-STD-883C OD-882 100mV

    Untitled

    Abstract: No abstract text available
    Text: L18ESD12VA2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 12 Volts POWER DISSIPATION - 180 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOD523 The L18ESD12VA2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge ESD .


    Original     		PDF L18ESD12VA2 L18ESD12VA2 OD523 OD523 MIL-STD-883C, 100mV

    L15ESD12VE2

    Abstract: L15ESD
    Text: LITE-ON SEMICONDUCTOR ESD PROTECTION DIODE L15ESDxVE2 STAND-OFF VOLTAGE - 12~24 Volts POWER DISSIPATION - 150 WATTS GENERAL DESCRIPTION SOD-882 The L15ESDxVE2 is designed to protect sensitive semiconductor components from damage or upset due to Electro Static Discharge


    Original     		PDF L15ESDxVE2 L15ESDxVE2 OD-882 OD-882 MIL-STD-883C L15ESD12VE2 L15ESD

    Untitled

    Abstract: No abstract text available
    Text: 9 SEU Mitigation for Stratix V Devices 2013.05.06 SV51011 Subscribe Feedback This chapter describes the error detection features in Stratix V devices. You can use these features to mitigate single event upset SEU or soft errors. Related Information Stratix V Device Handbook: Known Issues


    Original     		PDF SV51011

    krad

    Abstract: 67025E TM1019 RAM SEU
    Text: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity


    Original     		PDF 8Kx16 50Krad 10Krad 35Krad NT94055, 9849/92/NL, krad 67025E TM1019 RAM SEU

    SCS750

    Abstract: bc 7-25 Programmable Logic Controller radiation SCS750F 1000X 750FX ppc 750fx IBM PowerPC Processor 350 Mips IBM 750FX powerpc dhrystone PowerPC 750FX
    Text: SCS750 SCS750 SUPER COMPUTER FOR SPACE TM Super Computer for Space SCS750F® FLIGHT MODULE Overview of Specifications • One board upset every 100 years in a GEO or LEO Orbit • Up to 1000X Better Performance Than Current Space Processor Boards • Highest Space-Qualified Performance @1800 MIPS


    Original     		PDF SCS750 SCS750® SCS750F® 1000X SCS750 bc 7-25 Programmable Logic Controller radiation SCS750F 750FX ppc 750fx IBM PowerPC Processor 350 Mips IBM 750FX powerpc dhrystone PowerPC 750FX

    HCTS30

    Abstract: HCTS30DMSR HCTS30HMSR HCTS30KMSR HCTS30MS
    Text: HCTS30MS Radiation Hardened 8-Input NAND Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCTS30MS MIL-STD-1835 CDIP2-T14 -55oC 125oC HCTS30 HCTS30DMSR HCTS30HMSR HCTS30KMSR HCTS30MS

    HCTS574DMSR

    Abstract: HCTS574HMSR HCTS574KMSR HCTS574MS
    Text: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF HCTS574MS O11utputs -55oC 125oC HCTS574DMSR HCTS574HMSR HCTS574KMSR HCTS574MS

    MSI Logic

    Abstract: Structure of D flip-flop UNITED TECHNOLOGIES MICROELECTRONICS CENTER "radhard" overview Upset
    Text: Single Event Upset Design Techniques for UTMC’s RadHard MSI Logic Family Overview A Single Event Upset SEU is the result of an ion transitioning through a semiconductor structure and depositing charge on a critical circuit node within that structure. In a CMOS logic circuit,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free


    OCR Scan     		PDF HS-26C31RH 1x109 RS-422 Mil-Std-1835 CDIP2-T16 125PC 10sA/cm2 110pm 100pm

    Untitled

    Abstract: No abstract text available
    Text: HS-82C54RH S E M I C O N D U C T O R Radiation Hardened CMOS Programmable Interval Timer August 1995 Features Pinouts • Radiation Hardened - Total Dose >105 RAD Si - Transient Upset > 108 RAD (Si)/sec - Latch Up Free EPI-CMOS - Functional After Total Dose 1 x 106 RAD (Si)


    OCR Scan     		PDF HS-82C54RH 82C54 HS-80C86RH 16-Bit 5510pm 485pm

    Untitled

    Abstract: No abstract text available
    Text: Æ ic te - m ! v 2 .0 Radiation-Hardened Field Programmable Gate Arrays Features Guaranteed Total Dose Radiation Capability Low Single Event Upset Susceptibility High Dose Rate Survivability Latch-Up Im m unity Guaranteed QML Qualified Devices


    OCR Scan     		PDF RH1020 RH1280 CCS08and CQ256,

    Untitled

    Abstract: No abstract text available
    Text: HS- 82 C 54 RH S ttftsras Radiation Hardened CMOS Programmable Interval Timer August 1995 Features Pinouts • Radiation Hardened 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T24 TOP VIEW - Total Dose > 1 0 5 RAD (Si) - Transient Upset > 10 RAD (Si)/sec


    OCR Scan     		PDF MIL-STD-1835 CDIP2-T24 82C54 HS-80C86RH

    HR2340

    Abstract: sram pull down honeywell memory sram
    Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec


    OCR Scan     		PDF 1x106 1x103rad 1x1012rad HR2340 HR2340 sram pull down honeywell memory sram