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Rochester Electronics LLC UPC8128TB-E3-A IC AMP PCS 100MHZ-1.9GHZ 6SUPER
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DigiKey	UPC8128TB-E3-A	Bulk			417	1 - 10 - 100 - 1000 $0.72 10000 $0.72	Buy Now
California Eastern Laboratories (CEL) UPC8128TB-EV19 RF Development Tools Silicon MMIC Amp Evaluation
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Mouser Electronics	UPC8128TB-EV19					1 $110 10 $110 100 $110 1000 $110 10000 $110	Get Quote
California Eastern Laboratories (CEL) UPC8128TB-EV09 RF Development Tools Silicon MMIC Amp Evaluation
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Mouser Electronics	UPC8128TB-EV09					1 $110 10 $110 100 $110 1000 $110 10000 $110	Get Quote
Renesas Electronics Corporation UPC8128TB-E3-A RF Amp Single Low Current Amp 1.9GHz 3.3V 6-Pin Super Mini-Mold T/R
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Verical	UPC8128TB-E3-A		54,000		461	1 - 10 - 100 - 1000 $0.7366 10000 $0.7366	Buy Now
	UPC8128TB-E3-A		39,000		461	1 - 10 - 100 - 1000 $0.7366 10000 $0.7366	Buy Now
Rochester Electronics	UPC8128TB-E3-A		93,000		1	1 $0.6933 10 $0.6933 100 $0.6517 1000 $0.5893 10000 $0.5893	Buy Now
NEC Electronics Group UPC8128TB-E3 IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,BIPOLAR,TSSOP,6PIN,PLASTIC
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Quest Components	UPC8128TB-E3		178			1 - 10 - 100 - 1000 - 10000 -	Buy Now

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UPC8128TB Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
UPC8128TB	NEC	SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES	Original	PDF
uPC8128TB	NEC	RF Amplifier, Buffer amplifier, Single channel, Chip, 3100 MHz, SOT-363, 6-Pin	Original	PDF
UPC8128TB-E3	NEC	Silicon RFIC low current amplifier for cellular/cordless telephones.	Original	PDF
uPC8128TB-E3	NEC	RF Amplifier, Buffer amplifier, Single channel, Chip, 3100 MHz, SOT-363, 6-Pin	Original	PDF
UPC8128TB-EV09	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8128 900MHZ	Original	PDF
UPC8128TB-EV19	California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8128 1.9GHZ	Original	PDF

UPC8128TB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
upc 1478 Abstract: uPC 1163 nec marking power amplifier upc rfics marking 5 900MHZ UPC8128TB UPC8128TB-E3 UPC8151TB UPC8152TB 8128TB Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8128TB CELLULAR/CORDLESS TELEPHONES FEATURES GAIN vs. FREQUENCYand VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 Gain, GP dB • LOW CURRENT CONSUMPTION: Icc = 2.8 mA, TYP at 3.0 V • HIGH EFFICIENCY: P1dB = -4 dBm, TYP at f = 1 GHz	Original	PDF	UPC8128TB OT-363 UPC8128TB UPC8128TB-E3 900MHZ 24-Hour upc 1478 uPC 1163 nec marking power amplifier upc rfics marking 5 900MHZ UPC8128TB-E3 UPC8151TB UPC8152TB 8128TB
MARKING c2p Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz UPC8152TB; ISOL = 40 dB TYP. @ f = 1 GHz • LOW CURRENT CONSUMPTION:	Original	PDF	UPC8128TB UPC8151TB UPC8152TB UPC8128TB; UPC8151TB; UPC8152TB; MARKING c2p
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
top marking c3 Abstract: No abstract text available Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY ¥ LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40¡C TA = +25¡C	Original	PDF	UPC8178TB POWE15 UPC8178TB-E3 24-Hour top marking c3
UPC8128TB Abstract: UPC8151TB UPC8151TB-E3-A UPC8152TB Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz	Original	PDF	UPC8151TB UPC8151TB; OT-363 UPC8128TB UPC8151TB UPC8151TB-E3-A UPC8152TB
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
8151TB Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PC8128TB, PC8151TB, PC8152TB P13914JJ1V0ANJ11 FAX044435-9608 8151TB
tk 1838 Abstract: h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB Text: SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) PACKAGE OUTLINE TK • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V	Original	PDF	UPC8179TK UPC8179TK-E3 tk 1838 h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB
az 10840 Abstract: tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A Text: NEC's SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE TK • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) 1.3 ± 0.05 • SUPPLY VOLTAGE:	Original	PDF	UPC8179TK az 10840 tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	PDF	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
ic isl 887 Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 Text: RF & マイクロ波デバイスシステムブロック www.renesas.com 2010.04 目次 1. はじめに •··········································································································································· 3	Original	PDF	PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
gp 752 Abstract: marking C2U Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8151TB SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V	Original	PDF	UPC8151TB; UPC8151TB OT-363 UPC8151TB-E3-A 24-Hour gp 752 marking C2U

UPC8128TB Abstract: UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40°C TA = +25°C	Original	PDF	UPC8178TB UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB
nec marking power amplifier upc Abstract: 900MHZ UPC8128TB UPC8151TB UPC8152TB UPC8152TB-E3 18 sot-363 rf power amplifier Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8152TB CELLULAR/CORDLESS TELEPHONES FEATURES 1.0 GHz Output Port Matching • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V GAIN vs. FREQUENCY and VOLTAGE • LOW CURRENT CONSUMPTION: Icc = 5.6 mA TYP at 3.0 V +30 VCC = 3.3 V	Original	PDF	UPC8152TB OT-363 UPC8152TB-E3 900MHZ 24-Hour nec marking power amplifier upc 900MHZ UPC8128TB UPC8151TB UPC8152TB UPC8152TB-E3 18 sot-363 rf power amplifier
UPC8128TB Abstract: UPC8151TB UPC8151TB-E3 UPC8152TB SOT-363* marking 1001 gp 823 Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz	Original	PDF	UPC8151TB UPC8151TB; OT-363 UPC8151TB-E3 24-Hour UPC8128TB UPC8151TB UPC8151TB-E3 UPC8152TB SOT-363* marking 1001 gp 823
UPC8236 Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	PDF	G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
MARKING c2p Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES DESCRIPTION • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT CONSUMPTION: UPC8128TB; Icc = 2.8 mA t y p . @ 3.0 V UPC8151TB; Icc = 4.5 mA t y p . @ 3.0 V	OCR Scan	PDF	UPC8128TB UPC8151TB UPC8152TB UPC8128TB; UPC8151TB; UPC8152TB; MARKING c2p
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT UPC8128TB; Icc UPC8151TB; Icc UPC8152TB; Icc • • UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz	OCR Scan	PDF	UPC8128TB UPC8151TB UPC8152TB UPC8128TB; UPC8151TB; UPC8152TB;
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS >PC8128TB, ¡IPC8151TB, PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for	OCR Scan	PDF	PC8128TB, IPC8151TB, PC8152TB 8151TB 8152TB nitridP15-00-3 WS60-00-1 C10535E)
CD 2399 GP Abstract: ic cd 2399 gp ic cd 2399 go Text: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS liPC8128TB, /¿PC8151TB, pPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for	OCR Scan	PDF	liPC8128TB, PC8151TB, pPC8152TB PC8128TB, 8151TB 8152TB T-00-3 WS60-00-1 C10535E) CD 2399 GP ic cd 2399 gp ic cd 2399 go
uc8151 Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478 Text: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for	OCR Scan	PDF	uPC8128TB uPC8151TB uPC8152TB /xPC8128TB, 8151TB 8152TB uc8151 TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
t06 sot 23 Abstract: UPC2710 upc2713 Text: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.	OCR Scan	PDF	UPC1678GV6 UPC2708T2 UPC2709TB2 UPC2710T6 UPC2711TB2 UPC2712TB2 UPC2713T6 UPC2745TB6 UPC2746TB6 UPC2747T3 t06 sot 23 UPC2710 upc2713

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UPC8128TB Search Results

UPC8128TB Price and Stock

Rochester Electronics LLC UPC8128TB-E3-A

California Eastern Laboratories (CEL) UPC8128TB-EV19

California Eastern Laboratories (CEL) UPC8128TB-EV09

Renesas Electronics Corporation UPC8128TB-E3-A

NEC Electronics Group UPC8128TB-E3

UPC8128TB Datasheets (6)

UPC8128TB Datasheets Context Search

upc 1478

MARKING c2p

mobile phone basic block diagram

top marking c3

UPC8128TB

FET marking code g5d

nec mosfet marked v75

2SK2500

8151TB

tk 1838

az 10840

marking code C1E SMD Transistor

ic isl 887

gp 752

UPC8128TB

nec marking power amplifier upc

UPC8128TB

UPC8236

MARKING c2p

Untitled

Untitled

CD 2399 GP

uc8151

t06 sot 23