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    UPC2715T Search Results

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    UPC2715T Price and Stock

    NEC Electronics Group UPC2715T

    IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,TSOP,6PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPC2715T 3
    • 1 $11.25
    • 10 $5.625
    • 100 $5.625
    • 1000 $5.625
    • 10000 $5.625
    		Buy Now

    UPC2715T Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC2715T NEC 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT Original PDF
    UPC2715T-E3 NEC 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT Original PDF
    uPC2715T-E3 NEC 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT Original PDF
    UPC2715T-T1 NEC Super small-size low-current high-freq. wide-band amp. Original PDF
    UPC2715T-T2 NEC Super small-size low-current high-freq. wide-band amp. Original PDF

    UPC2715T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    104 c1k

    Abstract: 103 c1k UPC2714 UPC2714T UPC2714T-E3 UPC2715 UPC2715T UPC2715T-E3
    Text: LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER UPC2714T UPC2715T GAIN vs. FREQUENCY FEATURES 20 • LOW POWER CONSUMPTION: 15 mW VCC = 3.4 V, ICC = 4.5 mA UPC2715 15 Gain, GS (dB) • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T)


    Original     		PDF UPC2714T UPC2715T UPC2715 UPC2715T) UPC2714T) UPC2714 UPC2714T UPC2715T UPC2714T-E3 UPC2715T-E3 104 c1k 103 c1k UPC2714 UPC2714T-E3 UPC2715 UPC2715T-E3

    MARKING c1y

    Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART


    Original     		PDF UPC2708T UPC8106T UPC2747T UPC2709T UPC8108T UPC2748T UPC2710T UPC8109T UPC2749T UPC2711T MARKING c1y MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING

    Untitled

    Abstract: No abstract text available
    Text: NEC”LOW POWER CONSUMPTION UPC2714T UPC2715T SILICON MMIC AMPLIFIER FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN


    OCR Scan     		PDF UPC2714T UPC2715T UPC2715T) UPC2714T) UPC2714T UPC2715T UPC2714T/UPC2715T

    Untitled

    Abstract: No abstract text available
    Text: SEC 8 1983 LOW POWER CONSUMPTION SILICON MMIC AMPLIFIERS UPC2714T UPC2715T FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, lex; = 4.5 mA • HIGH POWER GAIN: 20 dB(UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • SUPER SMALL PACKAGE


    OCR Scan     		PDF UPC2714T UPC2715T UPC2715T) UPC2714T) sta96 34-6393/FAX

    Untitled

    Abstract: No abstract text available
    Text: N B C LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER UPC2714T UPC2715T FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc - 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN


    OCR Scan     		PDF UPC2714T UPC2715T UPC2715T) UPC2714T) UPC2715T UPC2714T,

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    transistor t06

    Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX


    OCR Scan     		PDF

    mmic a08

    Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18


    OCR Scan     		PDF

    SOT-26

    Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
    Text: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5


    OCR Scan     		PDF UPC1678GV UPC1688G UPC2708T2 UPC2709T2 UPC2710T UPC2711T2 UPC2711TB2 UPC2712T2 UPC2712TB2 UPC2713T SOT-26 t06 sot 23 SOT26 UPC1678G

    IC-2952

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC 2715T 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low p o w e r con sum p tion 15 m W Vcc = 3.4 V, Icc = 4.5 mA T Y P . • High po w e r gain


    OCR Scan     		PDF 2715T uPC2715T-E3 IC-2952