Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Suitable for high-density mounting and downsizing of the equipment
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UNR32ANG
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UNR32ANG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32ANG
UNR32ANG
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05
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UNR32AN
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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UNR32AN
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR32AN
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Suitable for high-density mounting and downsizing of the equipment
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UNR32ANG
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UNR32ANG
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32ANG Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: KL • Pin Name 1: Base 2: Emitter
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UNR32ANG
UNR32ANG
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UNR32AN
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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UNR32AN
UNR32AN
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UNR32AN
Abstract: SSSMini3-F1 transistor
Text: Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05
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UNR32AN
UNR32AN
SSSMini3-F1 transistor
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 0.80±0.05 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40)
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UNR32AN
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043AN Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 1.00±0.05 Parameter Symbol Collector-base voltage
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Composite Transistors NP062AN Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment
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NP062AN
UNR32AN
125nteed
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NP062AN
Abstract: UNR32AN
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP062AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.12+0.03 -0.02 4 0 to 0.02 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro
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NP062AN
NP062AN
UNR32AN
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NP043AN
Abstract: UNR31AN UNR32AN
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043AN Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 2 (0.35) (0.35) • Basic Part Number
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NP043AN
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP062AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment
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NP062AN
UNR32AN
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP062AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.12+0.03 -0.02 4 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 • Features 1 2 3 0.10 • Two elements incorporated into one package
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UNR32AN
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NP043AN
Abstract: UNR31AN UNR32AN
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043AN Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 4 2 1.00±0.05 Parameter Symbol Rating
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UNR31AN
UNR32AN
NP043AN
UNR31AN
UNR32AN
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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NP062AN
Abstract: UNR32AN
Text: Composite Transistors NP062AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption
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NP062AN
UNR32AN
NP062AN
UNR32AN
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UNR31AB
Abstract: matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT
Text: Sheet No. 1/6 DESIGNED CHECKED CHECKED APPROVED inaiMfê/Product Specification m ^ / T y p e Number: U N R 3 Q [ Ä ] [ [ ] o o [ l ] 1 1) 1) M 1) ~fz^OA£MXK v U D y V-y yi/7^9 /Si 1icon Transistors ÍSE'J/Type ffliË/AppI icat ion ífliíl/Structure °]S£ffl/Digital Circuit
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UNR31AÃ
UNR32A
UNR31AB
matsushita pnp
UNR31A1
UNR31A2
UNR31A4
UNR31AD
UNR31AE
UNR31AM
UNR31AN
UNR31AT
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