unr211
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)
|
Original
|
PDF
|
2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
unr211
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
UP03383G
UNR2213
UNR211F
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
UN211F
Abstract: UNR211F XN0111F XN111F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111F (XN111F) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package
|
Original
|
PDF
|
2002/95/EC)
XN0111F
XN111F)
UN211F
UNR211F
XN0111F
XN111F
|
UP03383G
Abstract: UNR211F UNR2213
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
UP03383G
UNR2213
UNR211F
UP03383G
UNR211F
UNR2213
|
UP04383G
Abstract: UNR211F UNR2213 transistors 10 KW
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
UP04383G
UNR211F
UNR2213
UP04383G
UNR211F
UNR2213
transistors 10 KW
|
UNR211F
Abstract: XN0111FG
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111FG Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
XN0111FG
UNR211F
UNR211F
XN0111FG
|
UN211F
Abstract: UNR211F XN0111F XN111F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111F (XN111F) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 1.1+0.2 –0.1
|
Original
|
PDF
|
2002/95/EC)
XN0111F
XN111F)
UN211F
UNR211F
XN0111F
XN111F
|
UNR2110
Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud
|
Original
|
PDF
|
2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
|
UNR211F
Abstract: UNR2213 XP03383
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
XP03383
UNR211F
UNR2213
XP03383
|
UNR211F
Abstract: UNR2213 XP03383
Text: Composite Transistors XP03383 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)
|
Original
|
PDF
|
XP03383
UNR2213
UNR211F
UNR211F
UNR2213
XP03383
|
UNR2119
Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
|
Original
|
PDF
|
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2119
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
|
|
|
UNR211F
Abstract: XN0111FG
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111FG Silicon PNP epitaxial planar type For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
XN0111FG
UNR211F
UNR211F
XN0111FG
|
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
|
Original
|
PDF
|
P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
|
UN211F
Abstract: UNR211F XP0111F XP111F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111F (XP111F) Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
|
Original
|
PDF
|
2002/95/EC)
XP0111F
XP111F)
UNR211F
UN211F)
UN211F
UNR211F
XP0111F
XP111F
|
UP03383G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features Package Two elements incorporated into one package (Transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
UP03383G
UNR2213
UNR211F
UP03383G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431NG Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features Package Two elements incorporated into one package (Transistors with built-in resistor)
|
Original
|
PDF
|
2002/95/EC)
UP0431NG
UNR2213
UNR211F
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03383 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 1 2 3 (0.50) (0.50) (0.20) • Two elements incorporated into one package
|
Original
|
PDF
|
2002/95/EC)
UP03383
UNR2213
UNR211F
|
STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
|
Original
|
PDF
|
02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111F (XP111F) Silicon PNP epitaxial planar type (0.425) 0.20±0.05 4 0.2±0.1 M Di ain sc te on na tin nc ue e/ d 1 5˚ 5 • Features • Two elements incorporated into one package
|
Original
|
PDF
|
2002/95/EC)
XP0111F
XP111F)
UNR211F
UN211F)
|
ic 2114
Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor
|
Original
|
PDF
|
E/211F/211H/211L/211M/211N/211T/211V/211Z
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
10knductor
ic 2114
ic 2113
211d
ic 2115
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
|
UN211F
Abstract: UN211H UNR211F UNR211H XN0611FH XN611FH
Text: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 2 0.50+0.10 –0.05 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage
|
Original
|
PDF
|
XN0611FH
XN611FH)
SC-74
UN211F
UN211H
UNR211F
UNR211H
XN0611FH
XN611FH
|
