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    UNR1216 Search Results

    UNR1216 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR1216 Panasonic Silicon NPN epitaxial planer transistor with biult-in resistor Original PDF
    UNR1216Q Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    UNR1216R Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    UNR1216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN1216

    Abstract: UNR1216 XP06216 XP6216
    Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter


    Original     		PDF XP06216 XP6216) UNR1216 UN1216) UN1216 XP06216 XP6216

    XP04216

    Abstract: XP4216 UN1216 UNR1216
    Text: Composite Transistors XP04216 XP4216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XP04216 XP4216) UNR1216 UN1216) XP04216 XP4216 UN1216

    XP01216

    Abstract: UN1216 UNR1216 XP1216
    Text: Composite Transistors XP01216 XP1216 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1216(UN1216) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP01216 XP1216) UNR1216 UN1216) XP01216 UN1216 XP1216

    UN1216

    Abstract: UNR1216 XN02216 XN2216
    Text: Composite Transistors XN02216 XN2216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1216(UN1216) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN02216 XN2216) UNR1216 UN1216) UN1216 XN02216 XN2216

    UN1216

    Abstract: UNR1216 XN01216 XN1216
    Text: Composite Transistors XN01216 XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1216(UN1216) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN01216 XN1216) UNR1216 UN1216) UN1216 XN01216 XN1216

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
    Text: Composite Transistors XP04316 XP4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) + UNR1116(UN1116) • Absolute Maximum Ratings Parameter


    Original     		PDF XP04316 XP4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XP04316 XP4316

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UNR1218

    Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1218 UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ


    Original     		PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    121f

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) 121f UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR121x UN121x UNR1210 UNR1211 UNR1212 UNR1213

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
    Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316

    UN1216

    Abstract: UNR1216 XN04216 XN4216
    Text: Composite Transistors XN04216 XN4216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage Rating of Collector to emitter voltage element Collector current +0.1 +0.1 0.4±0.2


    Original     		PDF XN04216 XN4216) UN1216 UNR1216 XN04216 XN4216

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
    Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 3 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)


    Original     		PDF XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316

    UN1216

    Abstract: UNR1216 XN02216 XN2216
    Text: Composite Transistors XN02216 XN2216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 (0.65) 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element


    Original     		PDF XN02216 XN2216) UNR1216 UN1216) UN1216 XN02216 XN2216

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
    Text: Composite Transistors XP04316 XP4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP04316 XP4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XP04316 XP4316

    UN1216

    Abstract: UNR1216 XP04216 XP4216
    Text: Composite Transistors XP04216 XP4216 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP04216 XP4216) UNR1216 UN1216) UN1216 XP04216 XP4216

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    UN1216

    Abstract: UNR1216 XN04216 XN4216
    Text: Composite Transistors XN04216 XN4216 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6


    Original     		PDF XN04216 XN4216) UNR1216 UN1216) UN1216 XN04216 XN4216

    UN1216

    Abstract: UNR1216 XN06216 XN6216
    Text: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current


    Original     		PDF XN06216 XN6216) UN1216 UNR1216 XN06216 XN6216

    121F

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 121F UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 UP04316
    Text: Composite Transistors UP04316 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 Display at No.1 lead 5˚ • Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating


    Original     		PDF UP04316 UN1116 UN1216 UNR1116 UNR1216 UP04316

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ


    Original     		PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    UN1216

    Abstract: UNR1216 XP06216 XP6216
    Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP06216 XP6216) UNR1216 UN1216) UN1216 XP06216 XP6216