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    NXP Semiconductors PMV40UN,215

    MOSFET N-CH 30V 4.9A TO236AB
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    Velocity Electronics PMV40UN,215 1,275
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    NXP Semiconductors PMV16UN,215

    MOSFET N-CH 20V 5.8A TO236AB
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    NXP Semiconductors PMV30UN,215

    MOSFET N-CH 20V 5.7A TO236AB
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    NXP Semiconductors PMV65UN,215

    MOSFET N-CH 20V 2.2A TO236AB
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    Rochester Electronics PMV65UN,215 2,063 1
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    NXP Semiconductors PMV28UN,215

    MOSFET N-CH 20V 3.3A TO236AB
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    UN215 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN215 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    UN2154 Panasonic TRANS DIGITAL BJT PNP 30V 100MA 3MINI3-G1 Original PDF
    UN2154 Panasonic PNP Transistor with built-in Resistor Original PDF
    UN2154 Panasonic Silicon PNP epitaxial planer transistor Original PDF

    UN215 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65)


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    PDF 2002/95/EC) UNR2154 UN2154)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65)


    Original
    PDF 2002/95/EC) UNR2154 UN2154)

    UN2154

    Abstract: UNR2154
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 1.9±0.1 Collector-emitter voltage (Base open)


    Original
    PDF 2002/95/EC) UNR2154 UN2154) SC-59 UN2154 UNR2154

    UN2154

    Abstract: UNR2154
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo


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    PDF 2002/95/EC) UNR2154 UN2154) UN2154 UNR2154

    UN2154

    Abstract: UNR2154
    Text: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Collector to base voltage VCBO −30 V Collector to emitter voltage


    Original
    PDF UNR2154 UN2154) SC-59 UN2154 UNR2154

    UN2154

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UN2154 Silicon PNP epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 For digital circuits 1.45 0.95 1 3 +0.1 0.4 –0.05 +0.2 1.9±0.2 Ta=25˚C +0.1 0.16 –0.06 0.8 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter Symbol Ratings


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    PDF UN2154 UN2154

    UN2154

    Abstract: UNR2154
    Text: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High forward current transfer ratio hFE • Costs can be reduced through downsizing of the equipment and


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    PDF UNR2154 UN2154) UN2154 UNR2154

    UN2154

    Abstract: UNR2154
    Text: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 For digital circuits 1.45 0.95 1 3 +0.1 0.4 –0.05 +0.2 1.9±0.2 (Ta=25˚C) +0.1 0.16 –0.06 0.8 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter


    Original
    PDF UNR2154 UN2154) UN2154 UNR2154

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


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    PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


    OCR Scan
    PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107

    2SK621

    Abstract: transistor xn n227 K-1103
    Text: Transistore Selection Guide by Applications and Functions •F E T s 5 Pin Mini T ype (D12) n n Main C haracteristics n n V ds S rrm r1 A pplication * V dsx ü U u [I U Q Neh 2 elem ents Neh 2 elem ents (V) XN1871 Low noise amp. switching XN 1872 n Id V,h


    OCR Scan
    PDF XN1871 2SK621 874/X 2SB970) UN215 UN216 UN217 UN222 UN223 N225/U 2SK621 transistor xn n227 K-1103

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    equivalent transistor n 4212

    Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
    Text: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )


    OCR Scan
    PDF UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent

    TRANSISTOR D1915

    Abstract: D1915 transistor D1915 Transistors D1915 n227
    Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) • 5 Pin Mini Type (D11) * 6 Pin S Mini Type (D7) • 6 Pin Mini Type (D12) Package Transistor, FET A Prelim inary •R e s is to r Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)


    OCR Scan
    PDF XN1111 XP1111 XN1112 XP1112 XP1113 XN1114 XP1114 XN1115 XP1115 XN1116 TRANSISTOR D1915 D1915 transistor D1915 Transistors D1915 n227