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    ULTRA LINEARITY RF TRANSISTOR Search Results

    ULTRA LINEARITY RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA LINEARITY RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0* dbm sot343

    Abstract: No abstract text available
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that provide the state of the art of RF silicon process to the


    Original     		PDF START450 19dBm 42GHz OT343 START450 OT343 START450TR 500MHz-5GHz 0* dbm sot343

    ic 0744

    Abstract: sot343
    Text: START450 NPN Silicon RF Transistor PRELIMINARY DATA • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that


    Original     		PDF START450 19dBm 42GHz OT343 START450 OT343 START450TR 500MHz-5GHz ic 0744 sot343

    BF 295

    Abstract: C785 transistor BF295 START450 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that


    Original     		PDF START450 19dBm 42GHz OT343 OT343 START450TR START450 500MHz-5GHz BF 295 C785 transistor BF295 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740

    BF295

    Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that


    Original     		PDF START450 19dBm 42GHz OT343 OT343 START450TR START450 500MHz-5GHz BF295 c785 C785 transistor BF 295 transistor BF 451 START450TR transistor C740

    C785 transistor

    Abstract: transistor C740 BF 245 B simulation model BF 245 A spice transistor c785
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that


    Original     		PDF START450 19dBm 42GHz OT343 OT343 START450TR START450 500MHz-5GHz C785 transistor transistor C740 BF 245 B simulation model BF 245 A spice transistor c785

    BF 295

    Abstract: transistor c785 C785 transistor transistor 139 BF NE 545 500MHz-5GHz ic 747 BF 245 B simulation model sot343 699 START450
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that


    Original     		PDF START450 19dBm 42GHz OT343 OT343 START450TR START450 BF 295 transistor c785 C785 transistor transistor 139 BF NE 545 500MHz-5GHz ic 747 BF 245 B simulation model sot343 699

    START450

    Abstract: No abstract text available
    Text: START450 NPN Silicon RF Transistor TARGET DATA • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • MAXIMUM STABLE GAIN Gms=14dB @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that


    Original     		PDF START450 19dBm 42GHz OT343 OT343 START450 500MHz-5GHzions

    HMC356LP3

    Abstract: radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89
    Text: OFF-THE-SHELF AUTUMN 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE SiGe GAIN BLOCKS NOW OFFERED! INSIDE. High Linearity Low Cost “Micro-X” MMIC Amplifiers to 6 GHz * 20 NEW PRODUCTS RELEASED! Product Showcase Ultra Wideband Driver Amp HMC464


    Original     		PDF HMC464 OC-48 OC-192 ISO9001-2000 HMC356LP3 radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89

    CA24

    Abstract: SMA24
    Text: A24 / SMA24 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA24 MIL-STD-883 CA24 SMA24

    CA24

    Abstract: SMA24
    Text: Cascadable Amplifier 5 to 1500 MHz A24/ SMA24 V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA24 MIL-STD-883 CA24 SMA24

    Untitled

    Abstract: No abstract text available
    Text: A24 / SMA24 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA24 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 1200 MHz A64/ SMA64 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA64 MIL-STD-883

    TRANSISTOR A64

    Abstract: a64 TRANSISTOR SMA64 CA64
    Text: A64 / SMA64 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA64 MIL-STD-883 TRANSISTOR A64 a64 TRANSISTOR SMA64 CA64

    acmd-7605

    Abstract: AFEM 7813 ACPM-7381 ACMD-7612 Tower Mounted Amplifiers Dual Band wifi 5 watt amplifier circuit ACFM-7104 ALM-1412 ALM-2812 MGA-61563
    Text: Wireless Semiconductor Solutions for RF and Microwave Communications Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect Avago Technologies Wireless Semiconductor Solutions for RF and Microwave Communications Accelerating Progress in


    Original     		PDF AV00-0117EN AV00-0138EN acmd-7605 AFEM 7813 ACPM-7381 ACMD-7612 Tower Mounted Amplifiers Dual Band wifi 5 watt amplifier circuit ACFM-7104 ALM-1412 ALM-2812 MGA-61563

    HSCH-9401

    Abstract: e-phemt HMPS-282x downconvertor MGA-85563 MGA-87563 OC-768 MGA-52543 Agilent RF amp MGA-545P8
    Text: Agilent Wireless Semiconductor Solutions for RF and Microwave Communications Semiconductor Solutions for the Connected World www.agilent.com/view/rf Agilent is Accelerating Progress in Wireless Communications. Mobile communications continue to grow in size and importance.


    Original     		PDF 7844EN 5988-7928EN HSCH-9401 e-phemt HMPS-282x downconvertor MGA-85563 MGA-87563 OC-768 MGA-52543 Agilent RF amp MGA-545P8

    Untitled

    Abstract: No abstract text available
    Text: Skyworks New and Featured Products David Seed Shuping Zhang MTTS 2014 Skyworks Solutions, Inc. Proprietary and Confidential Information Information 1 Skyworks At A Glance Skyworks Solutions is a Vertically Integrated provided of High Performance Analog and Mixed Signal Semiconductors Enabling Mobile Connectivity


    Original     		PDF SKY85706-11 11n/ac SKY73420-11

    LNA ku-band

    Abstract: No abstract text available
    Text: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG


    Original     		PDF BFR840L3RHESD BFR840L3RHESD: LNA ku-band

    celeritek LNA

    Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
    Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz


    Original     		PDF CDQ0303-QS 24-May-06 CDQ0303-QS celeritek LNA microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS-0G00 Coil Craft 104

    Untitled

    Abstract: No abstract text available
    Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz


    Original     		PDF CDQ0303-QS 24-May-06 CDQ0303-QS

    CDQ0303-QS

    Abstract: CDQ0303-QS-0G00 CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0
    Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS October 2007 - Rev 22-Oct-07 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain:


    Original     		PDF CDQ0303-QS 22-Oct-07 CDQ0303-QS CDQ0303-QS-0G00 CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0

    Transistor W03

    Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
    Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high


    Original     		PDF AN1465 START540 23dBm, OT-343 SC-70) 30mils Transistor W03 AN1465 ultra low noise NPN transistor ultra linearity rf transistor

    Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

    Abstract: varactor
    Text: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,


    Original     		PDF 889-A1, 17th-20th, Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity varactor

    MRF947T1 TRANSISTOR

    Abstract: motorola transistor 7439 8427 transistor Motorola 4718 TA 7176 IC 7814 transistor AN 7373 5812 MOTOROLA 2114 LC IC 7464 circuit
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F947T1 M RF947BT1 The RF Line NPN Silicon RF P o w er Tran sisto r D esigned fo r use in high gain, low noise s m a ll-sig n a l a m plifiers. This transistor features excellent broadband linearity, in an ultra-small surface mount


    OCR Scan     		PDF F947T1 RF947BT1 Tem65 MRF947T1 MRF947BT1 MRF947T1 TRANSISTOR motorola transistor 7439 8427 transistor Motorola 4718 TA 7176 IC 7814 transistor AN 7373 5812 MOTOROLA 2114 LC IC 7464 circuit

    DECT telephone schematic

    Abstract: LP3J toko FM if transformers murata frequency mixer gsm high frequency mixer Active Double Balanced Mixer DECT siemens
    Text: M MOTOROLA 1 - - - - "• MCI 3143 Advance Information Ultra Low Power DC 2.4 GHz Linear Mixer The MC13143 is a high compression linear mixer with single-ended RF input, differential IF output and differential LO inputs which consumes as little as 1.8 mW. A new circuit topology is used to achieve a high third order


    OCR Scan     		PDF MC13143 MC13143 DECT telephone schematic LP3J toko FM if transformers murata frequency mixer gsm high frequency mixer Active Double Balanced Mixer DECT siemens