Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UGF21030P Search Results

    UGF21030P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF21030P Cree FET Transistor, 30W, 2.1GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UGF21030P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UGF21030F

    Abstract: UGF21030 UGF21030P 300GP
    Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) 28VSpace 28VDC 350mA 2140Mhz 84MHz UGF21030F UGF21030 UGF21030P 300GP

    UGF21030F

    Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701
    Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21030 UGF21030F Cree Microwave MRF21030 UGF21030P 21701