UGF19090 Search Results

UGF19090 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UGF19090		Cree	90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET		Original	PDF
UGF19090		Cree	LDMOS FETs in Class AB Operation 1900 MHz Cellular		Original	PDF
UGF19090F		Cree	FET Transistor, 90W, 1.9GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
UGF19090P		Cree	FET Transistor, 90W, 1.9GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF19090 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ultrarf Abstract: MRF19090 Text: UGF19090 90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF19090 MRF19090 CDMA2000: 900mA 100kHz MRF19090 ultrarf
MRF19090 Abstract: UGF19090 UGF19090F UGF19090P Text: UGF19090 90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 90W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF19090 MRF19090 CDMA2000: UGF19090F MRF19090 UGF19090 UGF19090F UGF19090P
potentiometer 1k ohm Abstract: ZENER 26v potentiometer 1k Cree Microwave mono mosfet amplifier diagram UGF19090 UGF19090F UGF19090P 01UF 10UF Text: UGF19090 90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 90W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF19090 UGF19090F IS-97) IS-97 UGF19090 potentiometer 1k ohm ZENER 26v potentiometer 1k Cree Microwave mono mosfet amplifier diagram UGF19090F UGF19090P 01UF 10UF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	PDF	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b